Semiconductor device and method for manufacturing the same
a semiconductor and semiconductor technology, applied in the direction of solid-state devices, transistors, electrical devices, etc., can solve the problems of reducing the amount of charge accumulated in the memory device, and increasing the cost of manufactur
Active Publication Date: 2018-05-29
LONGITUDE LICENSING LTD
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- Application Information
AI Technical Summary
Benefits of technology
This approach miniaturizes the boundary region, eliminates step differences, improves manufacturing yield by preventing foreign matter production, and ensures lower electrode stability by providing a mechanical foundation, thus reducing manufacturing costs and enhancing the overall production process.
Problems solved by technology
In recent years, this memory device has had the problem of a decrease in the amount of charge accumulated in the capacitor as a result of the memory cells being miniaturized due to the development of microfabrication technique.
As a result, the chip area also becomes large and, therefore, the cost of manufacture increases.(2) Since a photoresist film is used as a mask for the peripheral circuit (logic circuit) region when removing portions of the interlayer insulating film in the memory cell region and the boundary region by a wet etching method, foreign matter is produced during wet etching.
Alternatively, watermarks or the like is produced since IPA (isopropyl alcohol) cannot be used when drying a wafer after wet etching.
Consequently, the yield of manufacture degrades.(3) A lower electrode collapses or adjacent lower electrodes come into contact with each other due to the absence of a foundation layer in the memory cell region.
In particular, the lower electrode becomes easy to collapse due to surface tension produced during wet etching with a lower electrode exposed.
Consequently, the yield of manufacture degrades.
Method used
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first exemplary embodiment
[0111](First Exemplary Embodiment)
[0112]Semiconductor Device
[0113]Next, a semiconductor device according to a first exemplary embodiment will be described in detail with reference to the accompanying drawings. FIG. 1 is a vertical cross-sectional view illustrating the semiconductor device of the first exemplary embodiment. This semiconductor device is comprised of a memory cell region for storing information, a peripheral circuit region for controlling the writing / reading of information to / from this memory cell region, and a boundary region present between the memory cell region and the peripheral circuit region. Thus, the semiconductor device as a whole constitutes a memory device.
[0114]First, an explanation will be made of the memory cell region and the boundary region. In the memory cell region of FIG. 1, two gate electrodes 4 are formed, by way of gate insulating film 3, on the principal surface of an active region defined by isolation insulating film 2 in the principal surface ...
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A semiconductor device comprises a memory cell region, a peripheral circuit region and a boundary region. In the memory cell region, a concave lower electrode and a foundation layer have a same uppermost surface positioned in a height of H above the plane-A. In the boundary region, one concave lower conductive region and a foundation layer have a same uppermost surface positioned in a height of H above the plane-A.
Description
CROSS REFERENCE TO RELATED APPLICATIONS[0001]The present application is a reissue application of U.S. Pat. No. 8,188,529; the entire contents of which are incorporated herein by reference.[0002]This application is based upon and claims the benefit of priority from Japanese Patent Application No. 2008-003284, filed on Jan. 10, 2008, the disclosure of which is incorporated herein in its entirety by reference.BACKGROUND OF THE INVENTION[0003]1. Field of the Invention[0004]The present invention relates to a semiconductor device which includes a memory cell region, a peripheral circuit region, and a boundary region in a boundary between the memory cell region and the peripheral circuit region and in which no step difference is formed in the boundary, and to a method for manufacturing the semiconductor device.[0005]2. Description of the Related Art[0006]A memory device, such as a DRAM (Dynamic Random Access Memory), generally comprises a memory cell region for storing information, a perip...
Claims
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IPC IPC(8): H01L27/108H10N97/00
CPCH01L27/0207H01L28/91H01L29/78H10B12/318H10B12/09H10B12/31H10B12/033H10B12/377
InventorNAKAMURA, YOSHITAKAKOMEDA, KENJISUEWAKA, RYOTAIKEDA, NORIAKI
OwnerLONGITUDE LICENSING LTD