Growing device of gas inner circulation type hot wire chemical vapor deposition (CVD) diamond films

Abstract

The invention relates to a growing device of gas inner circulation type hot wire CVD diamond films. The device comprises a sealed vacuum chamber provided with a reaction chamber inside. A fan is arranged at the top end of the inner wall of the reaction chamber, and a hot wire array composed of a plurality of parallel vertical tungsten wires is arranged below the fan; two ends of the hot wire array are connected with direct current, a substrate plate is arranged below the hot wire array, and a thermocouple is arranged on the substrate plate; an air inlet is arranged on the outer wall of the vacuum chamber on the upper side portion of the fan; and an air pumping opening is arranged on the lower side portion of the outer wall of the vacuum cavity. According to the growing device, large area and high speed growth of diamond films can be achieved, and consumption of hydrogen is reduced.

Description

technical field

[0001] The invention relates to a diamond film growth device, in particular to a gas internal circulation hot wire CVD diamond film growth device. Background technique

[0002] Due to its good optical, mechanical, electrical and chemical stability properties, diamond coating has a wide range of applications in industry and daily life. The initial diamond synthesis was mainly the high temperature and high pressure method. Although it has many disadvantages such as harsh preparation conditions, low synthesis quality, and high cost, it is still the preferred method for preparing diamond. In the past two decades, the study of low-temperature and low-pressure chemical vapor deposition of diamond films has attracted much attention from researchers all over the world. At present, the commonly used preparation methods mainly include microwave CVD, hot wire CVD, DC arc plasma, combustion method, etc., and their commonality is that the plasma generated by the low mol...

Examples

Embodiment Construction

[0014] A gas internal circulation type hot wire CVD diamond film growth device, the device includes a closed vacuum chamber with a reaction chamber inside. A fan 4 is arranged on the top of the inner wall of the reaction chamber, and a hot wire array 1 composed of multiple parallel straight tungsten wires is arranged under the fan 4; 2 is provided with a thermocouple 3; the outer wall of the vacuum chamber above the side of the fan 4 is provided with an air inlet 5;

[0015] Wherein: the air intake flow rate of the air inlet 5 and the suction flow rate of the air extraction port 6 are both 0~200 sccm.

[0016] During work, the pre-cleaned silicon wafer substrate is placed on the substrate tray 2, and then the pressure in the reaction chamber is pumped to 10 with a mechanical pump and a molecular pump. -3 ~10 -4 Pa. Heat the wire array 1 to 1800~2000°C by increasing the voltage of direct current, and inject 200 sccm of CH from the air inlet 5 4 +H 2 (The volume ratio is 1:...

technical field

[0001] The invention relates to a diamond film growth device, in particular to a gas internal circulation hot wire CVD diamond film growth device. Background technique

[0002] Due to its good optical, mechanical, electrical and chemical stability properties, diamond coating has a wide range of applications in industry and daily life. The initial diamond synthesis was mainly the high temperature and high pressure method. Although it has many disadvantages such as harsh preparation conditions, low synthesis quality, and high cost, it is still the preferred method for preparing diamond. In the past two decades, the study of low-temperature and low-pressure chemical vapor deposition of diamond films has attracted much attention from researchers all over the world. At present, the commonly used preparation methods mainly include microwave CVD, hot wire CVD, DC arc plasma, combustion method, etc., and their commonality is that the plasma generated by the low mol...

Examples

Embodiment Construction

[0014] A gas internal circulation type hot wire CVD diamond film growth device, the device includes a closed vacuum chamber with a reaction chamber inside. A fan 4 is arranged on the top of the inner wall of the reaction chamber, and a hot wire array 1 composed of multiple parallel straight tungsten wires is arranged under the fan 4; 2 is provided with a thermocouple 3; the outer wall of the vacuum chamber above the side of the fan 4 is provided with an air inlet 5;

[0015] Wherein: the air intake flow rate of the air inlet 5 and the suction flow rate of the air extraction port 6 are both 0~200 sccm.

[0016] During work, the pre-cleaned silicon wafer substrate is placed on the substrate tray 2, and then the pressure in the reaction chamber is pumped to 10 with a mechanical pump and a molecular pump. -3 ~10 -4 Pa. Heat the wire array 1 to 1800~2000°C by increasing the voltage of direct current, and inject 200 sccm of CH from the air inlet 5 4 +H 2 (The volume ratio is 1:...

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