Flat-board display of shallow-pit type cathode curved grid control structure and mfg. process

Abstract

The flat panel display includes cathode glass faceplate, anode glass faceplate, and sealed vacuum cavity surrounded by glass frame. There are cathode conductive layer, Nano carbon tubes, and sink marks type structure of curved grid electrode control structure of cathode on the cathode glass faceplate. There are anode conductive layer and phosphor layers prepared on the conductive layer on anode glass faceplate. Structure of supporting wall and attached elements of getter are located between anode glass faceplate and cathode glass faceplate. The invention enhances control function of grid electrode, integrates structure of grid electrode-cathode and reduces working voltage of apparatus so as to be in favor of raise display brightness of whole apparatus. Advantages are: stable and reliable manufacturing procedure, simple technique and structure, and low cost.

Description

technical field [0001] The invention belongs to the fields of flat panel display technology, microelectronic science and technology, vacuum science and technology, and nano science and technology, and relates to device fabrication of flat panel field emission displays, in particular to carbon nanotube cathodes. The device manufacturing aspect of the flat field emission display, especially relates to a flat panel display with a shallow dimple cathode curved grid control structure and its manufacturing process. Background technique [0002] Carbon nanotubes have a small tip curvature radius, high aspect ratio, and can exhibit excellent field emission characteristics under the action of an applied electric field strength, and are very suitable for use as cold cathode materials for field emission display devices. As a man-machine communication interface and information display, flat-panel displays are closely related to people's lives. Flat-panel displays will quickly replace tr...

AI Technical Summary

Problems solved by technology

On the one hand, it is necessary to shorten the distance between the grid structure and the carbon nanotube cathode structure as much as possible, so that the smaller working voltage of the grid structure can form a stronger electric field intensity at the top of the carbon nanotube cathode surface, and the In other words, it can effectively reduce the gate operating voltage, but these are also restricted by various factors such as the insulation level of the insulating material, the feasibility of the actual manufacturing process, and the manufacturing materials.

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