Method for manufacturing laser device
A laser device, laser technology, applied in laser parts, lasers, semiconductor lasers, etc., can solve problems such as shortening life, increasing operating voltage, and deteriorating driving current, achieving long service life, preventing re-adhesion, and preventing driving current. increased effect
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no. 1 example
[0067] (Structure of Nitride Semiconductor Laser Device)
[0068] 1A and 1B are a top view and a side view, respectively, illustrating a schematic structure of a nitride semiconductor laser device according to the present invention. FIG. 2 shows a schematic structure of a laser chip mounting bracket constituting a nitride semiconductor laser device.
[0069]As shown in FIG. 1B , a nitride semiconductor laser device 101 includes a laser chip fixing bracket 100 and a tube case 106 covering and enclosing the laser chip fixing bracket 100 . The laser chip fixing mount 100 includes a base 102 on which a nitride semiconductor laser chip 103 is mounted, and a stem 104 having a block portion 105 to which the base 102 is fixed. The stem 104 and its land portion 105 are integrally molded, and are composed of a metal such as copper or iron on which Au or the like is plated.
[0070] As shown in FIG. 1A, the package 106 is equipped with a light transparent window 107, and the laser beam...
no. 2 example
[0113] Next, the manufacturing method according to the second example of the present invention will be described mainly around the differences from the manufacturing method in the above-mentioned first example. The steps up to the simultaneous die bonding and wire bonding of the nitride semiconductor laser chip 103, the submount 102, and the stem 104 are similar to those in the manufacturing method according to the first example. After the steps are completed, the laser chip holder 100 and the package 106 are put into the ozone generator 290 shown in FIG. 7 . Oxygen 295 under atmospheric pressure (having a purity of 99.9999% and a dew point of -10° C.) is introduced through the air inlet 291, and gradually sprayed out through the gas outlet 292. At this time, the ozone generator 290 is almost only filled with oxygen. The laser chip fixing bracket 100 and the tube shell 106 are heated to a predetermined temperature of 220° C., and the ultraviolet lamp 293 is heated at 5.1 mW / cm...
no. 3 example
[0118] Next, the manufacturing method according to the third example of the present invention will be described mainly around the differences from the manufacturing method in the above-mentioned first example. The steps up to the simultaneous die bonding and wire bonding of the nitride semiconductor laser chip 103, the submount 102, and the stem 104 are similar to those in the manufacturing method according to the first example. After the steps are completed, the laser chip fixing bracket 100 and the package 106 are put into the plasma generator 300 shown in FIG. 8 , and argon and oxygen gas are introduced through the gas inlet 311 . The flow rate of argon was set to 100 seem and the flow rate of oxygen was set to 100 seem. The vacuum pump 313 connected to the gas outlet 312 reduces the pressure inside the plasma generator 300 to 10Pa.
[0119] Next, the temperature of the laser chip fixing bracket 100 and the package 106 is set to 220° C., and an oxygen plasma treatment is p...
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