Automatic power regulation device for polysilicon reducing furnace

Abstract

The invention discloses an automatic power regulation device for a polysilicon reducing furnace, comprising a silicon chip pre-heating device, a silicon chip constant-temperature heating device and controllers thereof, wherein, the silicon chip pre-heating device is provided with a power switch, a saturation resistor, a boosting transformer and a inverted pole switch which are connected in sequence, and the silicon chip pre-heating device is connected with a silicon chip by the inverted pole switch thereof; the silicon chip constant-temperature heating device is provided with a power switch, an isolation transformer, a silicon controlled rectifier and an isolating switch which are connected in sequence, and the silicon chip constant-temperature heating device is connected with the siliconchip by the isolating switch thereof; each controller is provided with a saturation resistor control module used for controlling the primary side voltage of the boosting transformer; a switch automatic switching control module is used for controlling the switching of the pre-heating device and the constant-temperature heating device, for controlling the breakdown sequence of the silicon chip, andfor controlling the tapping position of the inverted pole switch on the secondary side of the boosting transformer, thereby controlling preheating current of the silicon chip; a control module of thesilicon controlled rectifier is used for controlling the conduction angle of the controlled silicon, thereby controlling the constant-temperature heating current of the silicon chip; and the voltage regulator adopts wave splicing for voltage regulation.

Description

technical field [0001] The invention relates to a polysilicon production device, in particular to an automatic power adjustment device for a polysilicon reduction furnace, which is suitable for producing polysilicon by the Siemens method. Background technique [0002] The vast majority of polysilicon production adopts the Siemens method. The principle is to use trichlorosilane and hydrogen to carry out chemical reactions in the reduction furnace. At around 1100 ° C, the reduced silicon crystals are attached to the silicon core as a heater to realize silicon The core is long and thick, and the production process is divided into two stages: [0003] 1. In the silicon core preheating stage, the silicon core is heated to a temperature suitable for crystal growth. This stage is divided into two steps: first, the silicon core is a semiconductor, and its impedance is very high at room temperature. It must be broken down by high-voltage electricity, the resistance is reduced, and i...

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Problems solved by technology

[0009] On the basis of solving the problem of inverting the silicon core in time after the silicon core breaks down, the present invention further solves the problem of switching between the silicon core preheating device and the constant temperature heating device, and the harmonic noise generated by the continuous adjustment of the silicon core voltage by the thyristor problem, to provide a full-featured polysilicon reduction furnace automatic power adjustment device

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