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Wo2009060782

一种发光器件、场发射的技术，应用在电固体器件、半导体器件、电气元件等方向

Inactive Publication Date: 2010-10-06
INSIAVA
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  • Abstract
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Problems solved by technology

[0004] Another issue is that the buried oxide isolation region in the bulk can shield the injected carriers from the avalanche or field emission region, thereby further reducing the number of injected carriers reaching the avalanche or field emission region, said A buried oxide isolation region in the bulk material is a typical result of local oxidation or shallow trench isolation techniques, and this region is used to reduce the sidewall effect of the junction

Method used

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Embodiment Construction

[0043] exist figure 1 and 2 Multi-terminal light emitting devices fabricated from indirect bandgap semiconductor materials such as Si, Ge and Si-Ge are generally indicated by reference numeral 10 in .

[0044] The device comprises a first body 12 of an indirect bandgap semiconductor material, which in this example is Si. The first body has a thickness dimension d (typically, less than 10nm), and have width dimensions in their relevant parts w (typically, less than 100 nm), which is generally rectangular in cross-section and has a first or top wall 14, a second or bottom wall 16, and as figure 2 The side wall 32 shown in. The first body provides a first junction region 18 between a first region 12.1 of the body's first doping type and a second region 12.2 of the first body's second doping type. The first body also comprises a second junction region 20 between the second region 12.2 and a third region 12.3 of the first body, also of the first doping type. The first doping...

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Abstract

A light emitting device (10) comprises a first body (12) of an indirect bandgap semiconductor material. A first junction region (18) in the body is formed between a first region (12.1 ) of the body of a first doping kind and a second region (12.2) of the body of a second doping kind. A second junction (20) region in the body is formed between the second region of the body and a third region of the body of the first doping kind. The first and second junction regions being spaced from one another by not further than a minority carrier diffusion length. A terminal arrangement is connected to the first, second and third regions of the body for, in use, reverse biasing the first junction region into avalanche or field emission mode and for forward biasing the second junction region to inject carriers into the first junction region. A second body (22) of an isolation material is located immediately adjacent at least one wall of the third region, thereby to reduce parasitic injection from the third region.

Description

technical field [0001] The present invention relates to optoelectronic devices, and more particularly, to a light emitting device fabricated from an indirect bandgap semiconductor material and a method of generating light in an indirect bandgap semiconductor material. Background technique [0002] In US 6,111,271 a multi-terminal light emitting device fabricated from an indirect bandgap semiconductor material such as silicon is disclosed. The multi-terminal device includes a first pn junction and a second pn junction. In use, the terminals are set to reverse bias the first junction into avalanche or field emission mode to generate light, and forward bias the second junction to inject "cold" carriers into the avalanche or field emission mode region, thereby causing radiative recombination of the "cold" carriers and the "hot" carriers excited by avalanche or field emission and increasing the light generation efficiency of the device. [0003] However, in devices fabricated a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L27/15H01L33/34H01L33/54
CPCH01L33/54H01L33/34H01L33/0016H01L27/15H01L33/0008
Inventor M·杜普莱希斯
Owner INSIAVA
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