Silicon rod wall-collision detection device

Abstract

The invention discloses a silicon rod wall-collision detection device. The detection device comprises a grounding detection circuit connected with a zero line bank at a low-voltage side of a reduction furnace transformer, wherein, the grounding detection circuit comprises a first relay and a second relay; when the grounding detection circuit detects that a current value of the zero line bank is greater than a preset current threshold and a voltage value of the zero line bank is greater than a preset voltage threshold, the grounding detection circuit controls power outage of the first relay and the second relay; the first relay comprises a first normally closed contact and the second relay comprises a second normally closed contact, and the first normally closed contact and the second normally closed contact are connected in parallel; and the detection device further comprises an alarm device, the first normally closed contact and second normally closed contact are connected in parallel and then are connected with the alarm device in series, the first normally closed contact is closed when the current value of the zero line bank is greater than the preset current threshold, the second normally closed contact is closed when the voltage value of the zero line bank is greater than the preset voltage threshold, and the alarm device sends an alarm signal when either of the first normally closed contact and the second normally closed contact is closed. The silicon rod wall-collision detection device can be also externally connected with an audible and visual alarm so as to prompt an operator.

Description

technical field [0001] The invention relates to detection technology, in particular to a silicon rod collision detection device. Background technique [0002] In the reduction production of polysilicon by Siemens method, the reduction furnace is the main equipment for producing polysilicon. The furnace is equipped with a silicon core with a height of 2.0m-2.8m and a diameter of only φ7-8mm. The temperature in the furnace is maintained by heating the silicon core through power adjustment power supply. At 1080°C, the silicon core gradually melts and becomes soft. After a certain proportion of trichlorosilane and hydrogen gas mixture is introduced, the silicon core begins to grow and become thicker. When a certain thickness is reached, the furnace is stopped and the polysilicon is successfully refined. . [0003] However, during the whole production process, the problem of silicon rods hitting a wall is often encountered. In the early stage of silicon rod growth, due to the t...

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Problems solved by technology

[0008] However, this device can only control the action of the power regulating cabinet, but there is no alarm device, and the operator cannot get the fault prompt in time, so that the problem cannot be solved in time, which in turn affects the production efficiency

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