Method for increasing latitude of posterior layer exposure process

Abstract

The invention provides a method for increasing latitude of a posterior layer exposure process. The method comprises the steps of: firstly carrying out anterior layer photoetching and posterior layer photoresist layer coating on a testing wafer, then carrying out high and low point detection to find the high and low point positions affecting the exposure of the posterior layer and a next layer of the posterior layer, and deleting or increasing redundant patterns to a light hood for exposure of the posterior layer so as to carry out high and low point compensation, or deleting or increasing redundant patterns to light hoods for exposure of the anterior layer and the posterior layer so as to carry out high and low point compensation. By adopting the method provided by the invention, the latitude of the posterior layer exposure process is greatly increased.

Description

technical field [0001] The invention relates to the manufacturing technology of semiconductor devices, in particular to a method for improving the latitude of the back-layer exposure process. Background technique [0002] At present, with the development of semiconductor technology, the operating speed of semiconductor devices is getting faster and faster, and the integration of chip circuits is getting higher and higher, so that the characteristic size parameters of semiconductor devices are gradually reduced. For 65 nanometers or higher precision As far as the technology generation is concerned, the requirements for exposure are getting higher and higher. When the feature size of the semiconductor device is reduced to a certain extent, the density of the pattern of the semiconductor device on the wafer cannot be ignored. The depth of focus is very different between the place where the pattern is sparse and the place where the pattern is dense. When the exposure unit (shot...

AI Technical Summary

Problems solved by technology

The depth of focus is a range around the focal point, within which the image remains clear continuously. This range is called the depth of focus (DOF). If the exposure depth of focus exceeds this clear range, the quality of the exposure will deteriorate. , cannot expose a clear pattern

[0003] In the prior art, the exposure is generally performed directly on the product wafer, and patterns with poor exposure quality often appear, so this problem has always been to be solved

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