Unlock instant, AI-driven research and patent intelligence for your innovation.
Electrostatic chuck
What is Al technical title?
Al technical title is built by PatSnap Al team. It summarizes the technical point description of the patent document.
An electrostatic chuck and electrode technology, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., can solve problems such as deformation and damage of processed objects, and achieve the effect of easy detachment
Active Publication Date: 2016-01-06
KYOCERA CORP
View PDF4 Cites 0 Cited by
Summary
Abstract
Description
Claims
Application Information
AI Technical Summary
This helps you quickly interpret patents by identifying the three key elements:
Problems solved by technology
Method used
Benefits of technology
Problems solved by technology
[0006] Here, in the state where the residual adsorption force is large, if the workpiece is detached from the adsorption surface by the overmold needle, there is a problem that the workpiece will be deformed or damaged.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more
Image
Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
Click on the blue label to locate the original text in one second.
Reading with bidirectional positioning of images and text.
Smart Image
Examples
Experimental program
Comparison scheme
Effect test
Embodiment 1
[0054] about having figure 1 The electrostatic chuck 1 of the present invention having the above structure is fabricated as follows. Specifically, the starting materials of the insulating base 2 were set to the following six materials.
[0055] As material 1, Al with a purity of 99.6% by mass is used 2 o 3 powder. The Al 2 o 3 The average particle diameter D50 of the powder was 0.5 μm.
[0056] As material 2, Al at a purity of 99.6% by mass 2 o 3 Add MgO and SiO as sintering aids to powder (average particle diameter D50: 0.5μm) 2 , CaO powder, set as Al 2 o 3 Powder 98% by mass, MgO, SiO 2 , and CaO in a total ratio of 2% by mass.
[0057] As material 3, AlN powder with a purity of 99% by mass was used. The average particle diameter D50 of this AlN powder was 1.2 μm.
[0058] As material 4, at a purity of 99.6% by mass Al 2 o 3 Powder (average particle size D50 is 0.5μm) powder is added with TiO 2 (average particle size D50 is 0.7μm) powder, to obtain Al 2 o ...
Embodiment 2
[0085] for having image 3 The electrostatic chuck 1 of the present invention having the above structure is fabricated as follows.
[0086] The starting material of the insulating matrix 2 is set to a purity of 99.6% by mass Al 2 o 3 Powder (average particle diameter D50 is 0.5μm), relative to 100 mass parts of raw material powder, 80 mass parts of toluene, 0.5 mass parts of dispersant are mixed in the ball mill with high-purity Al of Φ20mm 2 o 3 The pellets were wet pulverized and mixed together for 48 hours.
[0087] It should be noted that, during the above-mentioned wet pulverization and mixing, prepare to add the reagent Fe of the amount shown in Table 2 2 o 3 or reagent Cr 2 o 3 samples and samples without these additions. Here, regarding the addition of reagent Fe 2 o 3 or reagent Cr 2 o 3 samples, Fe 2 o 3 I use iron oxide (III) deer special grade, Cr made by Kanto Chemical Co., Ltd. 2 o 3 Chromium oxide (III) deer special grade manufactured by Kanto Ch...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More
PUM
Property
Measurement
Unit
thickness
aaaaa
aaaaa
particle size
aaaaa
aaaaa
particle size
aaaaa
aaaaa
Login to View More
Abstract
The present invention provides an electrostatic chuck in which the suppression force of residual adsorption hardly deteriorates over time. An electrostatic chuck comprising: an insulating base (2) and an electrode (3) for adsorption, characterized in that the region including at least the upper surface of the insulating base (2) is made of ceramics, the ceramics contain Mn, and It contains a first transition element composed of at least one of Fe and Cr, and the ratio C2 / C1 of the content C2 (mol) of the first transition element to the content C1 (mol) of Mn is 1 or more.
Description
technical field [0001] The present invention relates to an electrostatic chuck that does not cause problems such as the inability to detach workpieces such as silicon wafers for semiconductor applications over time in film forming devices such as PVD devices, CVD devices, ion plating devices, and vapor deposition devices, and etching devices. It is used for fixed maintenance, correction and transportation. Background technique [0002] Conventionally, in film forming devices such as PVD devices, CVD devices, ion plating devices, and vapor deposition devices, and etching devices, in order to fix workpieces such as silicon wafers with high precision, the surfaces of plate-shaped objects after flat and smooth finishing are carried out. As the suction device, an electrostatic chuck utilizing electrostatic suction force is used. [0003] The electrostatic chucks used in these film-forming devices and etching devices use one main surface (the widest surface) of a plate-shaped ins...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More
Application Information
Patent Timeline
Application Date:The date an application was filed.
Publication Date:The date a patent or application was officially published.
First Publication Date:The earliest publication date of a patent with the same application number.
Issue Date:Publication date of the patent grant document.
PCT Entry Date:The Entry date of PCT National Phase.
Estimated Expiry Date:The statutory expiry date of a patent right according to the Patent Law, and it is the longest term of protection that the patent right can achieve without the termination of the patent right due to other reasons(Term extension factor has been taken into account ).
Invalid Date:Actual expiry date is based on effective date or publication date of legal transaction data of invalid patent.
Login to View More