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Semiconductor and solar wafers and method for processing same

A wafer and source wafer technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., and can solve problems such as low efficiency

Inactive Publication Date: 2013-04-10
MEMC ELECTONIC MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The disadvantage of this method is that it is inefficient

Method used

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  • Semiconductor and solar wafers and method for processing same
  • Semiconductor and solar wafers and method for processing same
  • Semiconductor and solar wafers and method for processing same

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Embodiment Construction

[0024] now refer to Figure 6 and 7A - 7E, shows a method 100 of manufacturing or processing a bonded wafer (optionally a silicon-on-insulator or SOI wafer). Figure 7A The shown active wafer 101 and substrate wafer 103 are conventional wafers. They both have mirror-polished front surfaces 101F, 103F and are relatively defect-free.

[0025] Active wafer 101 and substrate wafer 103 may be made of any single crystal semiconductor material suitable for SOI structures. Generally, the wafer may be composed of a material selected from the group consisting of silicon, germanium, gallium arsenide, silicon germanium, gallium nitride, aluminum nitride, phosphorus, sapphire, and combinations thereof. In one embodiment, the wafers 101, 103 are made of silicon.

[0026] An oxide layer is deposited 102 on the front surface of the active wafer. Oxidation is typically performed in a vertical furnace such as the commercially available AMS400. The front surface of the wafer is then bonded ...

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Abstract

A method for manufacturing a silicon-on-insulator structure including a substrate wafer, an active wafer, and an oxide layer between the substrate wafer and the active wafer. The method includes the steps of heat treating the structure, trapezoid grinding edges of the wafer, and grinding a surface of the wafer.

Description

technical field [0001] The present invention relates to semiconductor and solar wafers such as silicon-on-insulator (SOI) bonding structures, and more particularly to a bonded silicon-on-insulator wafer and a method of manufacturing the same. Background technique [0002] Semiconductor wafers are typically made by slicing a single crystal ingot (eg, a silicon ingot) into individual wafers. Although described herein with reference to semiconductor wafers made of silicon, other materials may be used, such as germanium, gallium arsenide, or other materials described below. One type of wafer is a silicon-on-insulator (SOI) wafer. SOI wafers include a thin silicon layer (active layer) on top of an insulating layer (eg, an oxide layer), which in turn is disposed on a silicon substrate. A bonded SOI semiconductor wafer is an SOI structure. [0003] Demands on SOI (silicon-on-insulator) wafers are increasing due to device width reduction, power savings, ultra-high-speed performan...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/762
CPCH01L21/76256H01L21/762H01L21/20
Inventor G·D·张R·旺达姆
Owner MEMC ELECTONIC MATERIALS INC