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method for proximity correction

A technology of proximity correction and design layout, which is applied in the direction of originals for photomechanical processing, special data processing applications, and photolithography on patterned surfaces. It can solve problems such as pattern fidelity correction failure and unstable correction convergence.

Active Publication Date: 2016-04-27
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The resolution limitation of lithography introduces rounded corners into contours
The difference between the target point and the fillet profile causes unstable correction convergence, which causes the pattern fidelity correction to fail

Method used

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Embodiment Construction

[0047]The following disclosure provides a variety of different embodiments or examples for implementing different features of the present invention. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are only examples and are not intended to limit the invention. Additionally, the present invention may repeat reference symbols and / or characters in multiple instances. This repetition is used for simplicity and clarity, and by itself does not indicate a relationship between the various embodiments and / or configurations. In addition, in the following description of the present invention, the implementation of the first process before the second process may include the implementation of the second process immediately after the first process, and may also include another process between the first process and the second process. Examples of implementation. Various features may be arbitrarily drawn in different ...

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Abstract

The present invention discloses a method of manufacturing a mask for an integrated circuit (IC) design, the method including receiving an IC design layout. The IC design layout includes an IC component having a first outer boundary, and a first target point assigned to the first outer boundary. The method also includes generating a second outer boundary for the IC component; and, moving all of the first target points to the second outer boundary to form a modified IC design layout. The invention also discloses a method for proximity correction.

Description

technical field [0001] The present invention relates generally to the field of semiconductor technology, and more particularly to methods for proximity correction. Background technique [0002] The semiconductor integrated circuit (IC) industry has undergone rapid development. Technological advances in IC materials and design have produced several generations of IC products, each with smaller and more complex circuits than the previous generation. Over the course of IC advancements, functional density (ie, the number of interconnected devices per chip area) has generally increased, while geometry size (ie, the smallest component that can be created using a fabrication process) has decreased. These advances have increased the complexity of processing and manufacturing ICs, and in order to realize these advances, similar developments in IC processing and manufacturing are required. [0003] Dimensional downscaling processes generally offer benefits in terms of increased prod...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/36G06F17/50
CPCG03F1/36G03F1/70G06F30/398
Inventor 许照荣林世杰林华泰林本坚
Owner TAIWAN SEMICON MFG CO LTD