Production process of high-purity refined trichlorosilane

A trichlorosilane and production process technology, applied in the direction of halosilane, halide silicon compounds, etc., can solve the problems of high investment cost, high heat energy, electric energy consumption, high rectification tower height, etc., to improve the utilization rate of materials , the effect of reducing energy consumption

Active Publication Date: 2015-07-22
XINTE ENERGY
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Problems solved by technology

[0004] At present, domestic polysilicon factories generally adopt conventional multi-stage rectification technology to purify trichlorosilane. The number of rectification stages is large, and the height of the rectification tower is high, and the reflux ratio is large, so that the production of polysilicon consumes less heat and electricity. high
And the one-time investment cost is relatively high

Method used

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  • Production process of high-purity refined trichlorosilane

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Embodiment Construction

[0035] In order to further understand the present invention, the preferred embodiments of the present invention are described below, but it should be understood that these descriptions are only for further illustrating the features and advantages of the present invention rather than limiting the patent requirements of the present invention.

[0036] According to the present invention, the crude trichlorosilane raw material solution in step a) can be prepared by methods well known to those skilled in the art. In the raw material liquid of crude trichlorosilane, impurities include phosphorus-containing compounds, boron-containing compounds, solid silicon powder particles and metal chlorides, but are not limited thereto. Specific examples of the phosphorus-containing compound are phosphorus trichloride and phosphorus pentachloride, specific examples of the boron-containing compound are boron trichloride and diborane, and specific examples of the metal chloride are ferrous chloride...

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Abstract

The present invention relates to the field of rectification purification. At present, conventional multi-stage rectification technology is used to purify trichlorosilane in the production of polysilicon. The number of rectification stages is large, and the reflux ratio is large, which consumes a lot of energy and requires high equipment investment. In order to overcome these problems, The technical scheme of the present invention adopts a new technology combining resin adsorption and multi-stage rectification, precools the crude trichlorosilane liquid, pumps it into an adsorption device equipped with divinylbenzene special resin to remove boron and phosphorus impurities, and then The adsorbed trichlorosilane liquid is rectified in a three-stage rectification tower to obtain high-purity trichlorosilane. The present invention not only achieves the purpose of the invention, but also has high purity of trichlorosilane and the impurity content of the rectification isolate It is relatively low and can be recycled and used as a disproportionation reaction, which further reduces energy consumption and improves material utilization.

Description

technical field [0001] The invention relates to the technical field of rectification and purification, in particular to a method for adsorption and rectification of crude trichlorosilane and a device thereof. Background technique [0002] Nowadays, the production method of polysilicon is mainly the improved Siemens method. The improved Siemens method is to convert metallurgical grade metal silicon powder into liquid chlorosilane such as trichlorosilane, and then remove the impurities in it by rectification and purification to obtain high-purity refined trichlorosilane. Chlorosilane, and then use high-purity hydrogen to reduce the purified high-purity refined trichlorosilane to polysilicon. [0003] The purity requirements of polysilicon products required by the photovoltaic industry are very high. The content of impurities such as phosphorus, boron and other metals in solar-grade polysilicon is required to be below 1ppb, and the impurity content of electronic-grade polysilic...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): C01B33/107
Inventor江庆云
OwnerXINTE ENERGY