153 results about "Trichlorohydrin" patented technology

The invention discloses a catalyst for preparing trichlorosilane and a catalytic preparation method of trichlorosilane. The catalyst is prepared from the following components in percentage by mass: weighed copper nitrate, zinc nitrate, aluminum nitrate, lanthanum nitrate and the balance of a carrier, the preparation method comprises the following specific steps: S1, filling a catalyst; S2, purifying raw material gas; S3, reacting; and S4, separating and purifying a product, namely discharging a reacted gas product from an outlet of a reactor, and condensing through a condenser. In the prepared catalyst, the activity and selectivity of the catalyst are remarkably improved through the synergistic effect of the copper-zinc-aluminum composite oxide and the rare earth element lanthanum, the electronic structure and the surface acid-base property of the catalyst can be adjusted through doping of lanthanum, the reaction of silicon powder and hydrogen chloride is promoted, meanwhile, side reactions are inhibited, and the service life of the catalyst is prolonged. And the yield of trichlorosilane is improved.

The invention belongs to the technical field of trichlorosilane purification, and discloses an adsorbent for adsorbing phosphorus impurities in trichlorosilane and a preparation method and application thereof.The preparation method comprises the steps that activated carbon is immersed in a solution containing ammonium metavanadate and oxalic acid, ultrasonic treatment and drying are conducted, and a vanadium oxide / carbon material mixture is obtained; calcining the vanadium oxide / carbon material mixture, and performing reduction treatment to obtain the oxygen vacancy-rich activated carbon loaded vanadium oxide adsorbent. The activated carbon loaded vanadium oxide adsorbent rich in oxygen vacancies is prepared by using a dipping-calcining-reducing method, and phosphorus impurities are adsorbed and removed by using the interaction of the activated carbon loaded vanadium oxide adsorbent and PCl3. The active carbon loaded vanadium oxide adsorbent rich in oxygen vacancies interacts with PCl3, so that trace PCl3 can be efficiently removed.

The invention provides an efficient trichlorosilane synthetic furnace and an intelligent temperature control method thereof. The efficient trichlorosilane synthetic furnace comprises a reactor body and an intelligent temperature control module, the reactor body comprises a shell; the shell comprises a conical area and a cylindrical area; the cylindrical area sequentially comprises a lower-section reaction area, a middle-section reaction area and an upper-section reaction area from bottom to top, and cooling devices are independently arranged on the outer sides of the reaction areas respectively; an internal part is arranged in the lower section reaction area; the intelligent temperature control module comprises a temperature sensor unit, an intelligent control unit and a flow adjusting unit. According to the invention, by arranging the internal part and the intelligent temperature control module, intelligent temperature control is realized, the temperature uniformity of each reaction area in the trichlorosilane synthetic furnace is effectively improved, and the conversion rate of trichlorosilane is greatly improved.

The invention relates to the technical field of chemical engineering, and discloses a trichlorosilane hydrogen reduction polycrystalline silicon growth monitoring system fusing multi-source data. Comprising a multi-sensor monitoring module, a multi-sensor data acquisition module, a multi-source data preprocessing module, a growth process data analysis module, a growth state online evaluation module, a process parameter online regulation and control module, a regulation and control result feedback module and a system collaborative management module, the multi-sensor monitoring module monitors the growth process of trichlorosilane hydrogen reduction polycrystalline silicon through multiple sensors, the multi-sensor data acquisition module acquires original data, the multi-source data preprocessing module preprocesses the data, the growth process data analysis module carries out data calculation, and the growth state online evaluation module carries out online comprehensive evaluation. The process parameter online regulation and control module regulates and controls process parameters online, the regulation and control result feedback module generates an adjustment strategy, and the system collaborative management module performs system parameter recording and storage, system optimization and exception handling.

The invention discloses an ICP-MS (Inductively Coupled Plasma Mass Spectrometry) detection method for phosphorus in trichlorosilane, and belongs to the field of analysis of high-purity electronic chemicals. According to the invention, a low-temperature matrix digestion technology is adopted to quantitatively form a SiFcomplex and inhibit silicon volatilization loss; according to the matrix matching calibration system, a calibration curve is constructed by adopting a weighted least square method, so that matrix interference is effectively corrected; a detection technology screening strategy is carried out by combining a cascade strategy of high-resolution inductively coupled plasma mass spectrometry, so that the interference of a complex matrix is successfully avoided. Experiments show that when the method is used for detecting phosphorus, the linear correlation coefficient R is greater than 0.999, the detection limit is as low as 0.02 ng / g, and the method accords with ISO 17025 and semiconductor-grade material quality control standards, and is suitable for accurate quantitative analysis of ng / g-grade phosphorus elements in high-purity trichlorosilane.

The utility model provides a system for synthesizing trichlorosilane. The system for synthesizing trichlorosilane comprises a trichlorosilane synthesis reaction device, a first gas-solid separation unit, a first tail gas treatment unit, a silicon tetrachloride hydrogenation reaction device, a second gas-solid separation unit, a second tail gas treatment unit and a product separation and purification unit. According to the system, through the technological process of fusing the trichlorosilane synthesis reaction and the silicon tetrachloride hydrogenation reaction, efficient utilization of silicon powder, hydrogen and silicon tetrachloride is achieved, the investment and operation cost is saved, and meanwhile the raw material consumption is reduced.

The invention discloses a low-expansion silicon-carbon negative electrode material and a preparation method thereof, and belongs to the technical field of secondary batteries. The invention relates to a preparation method of a low-expansion silicon-carbon negative electrode material. The preparation method comprises the following steps: S1, depositing SiO2: depositing porous carbon for the first time by adopting silane with at least two ethyoxyl groups or methoxyl groups; then calcining to obtain a SiO2 deposition layer; s2, silicon deposition: carrying out secondary deposition on the material obtained in the step S1 by adopting monosilane, disilane and / or trichlorosilane; and S3, carbon coating: carrying out carbon coating on the material obtained in the step S2 by using a carbon source gas. According to the low-expansion silicon-carbon negative electrode material disclosed by the invention, porous carbon is firstly subjected to deposition modification by utilizing SiO2 deposition, so that the overall structural strength of a framework is improved; after silane deposition, silicon of the second deposition layer and silicon dioxide of the first deposition layer can react to generate SiO, and volume expansion of silicon crystal grains can be relieved.

The invention provides a continuous synthesis system of gamma-chloropropyltrichlorosilane. The continuous synthesis system comprises a trichlorosilane storage tank, a chloropropene storage tank, a catalyst storage tank, a static mixer, an n-stage series tubular reaction system and a rectification device, the tubular reaction system comprises a tubular reactor, a back pressure valve, a degassing device and a condenser; a liquid phase outlet of the degassing device and a liquid phase outlet of the condenser are connected with a next-stage tubular reactor; the trichlorosilane storage tank, the chloropropene storage tank and the catalyst storage tank are respectively connected with an inlet of the static mixer, and an outlet of the static mixer is connected with the first-stage tubular reactor; the inlet feed of the second to nth stages of tubular reactors comprises chloropropene; a liquid phase outlet of the nth-stage degassing device is connected with an inlet of the rectification device, and the rectification device is connected back to the first-stage tubular reactor and outputs a gamma-chloropropyltrichlorosilane product. The reaction efficiency and the conversion rate are improved, and the production energy consumption and the cost are low. The invention further provides a synthesis method based on the system, and the technological process is simple.

The utility model relates to a trichlorosilane adsorption tower in the technical field of adsorption equipment, which comprises a tower body, an air inlet pipe and an emptying pipe are arranged at the bottom of the tower body, and an exhaust pipe is arranged at the top of the tower body; the interior of the tower body is divided into a spraying area and an adsorption area from bottom to top, a spraying pipe is arranged at the top of the spraying area, a spherical gas distribution plate is arranged at the bottom of the spraying area, gas distribution holes are fully distributed in the gas distribution plate, and the gas inlet pipe is located below the gas distribution plate; the adsorption area comprises a filler layer, the filler layer is an activated carbon layer, a heat exchange assembly is arranged in the filler layer, the heat exchange assembly comprises a coiled pipe, and the coiled pipe is connected with a medium inlet pipe and a medium outlet pipe. According to the utility model, trichlorosilane can be subjected to impurity removal and purification after spraying and adsorption in sequence, the efficiency is high, and the effect is good; the temperature of the filler area can be flexibly adjusted according to needs, the adsorption effect can be improved, the filler can be purified, and the next adsorption effect is not affected.

The invention discloses a slow-start pneumatic switch valve device for trichlorosilane feeding, and belongs to the technical field of material preparation process valves. Comprising a switch valve and a pneumatic actuator, linear motion of a piston rod is converted into rotation fine adjustment through a swing arm rotation compensation mechanism, a solid / microgroove sealing ring and a sliding cavity wall are always kept on a theoretical contact line, abrasion microgaps are automatically compensated, zero-clearance sliding in the whole life cycle is achieved, and manual clearance adjustment is avoided; the solid sealing ring adopts surface-surface contact, so that the unit pressure is reduced by more than 50%, and the wear rate is obviously reduced; the omega-shaped groove of the microgroove sealing ring converts solid particles (10-50 microns Si) into groove edge elastic sealing, and the wear rate is reduced by 40% again; a sealing surface is provided with a uniform oil film, the dynamic and static friction coefficient difference is reduced, crawling / jumping in a 0-20% opening low-speed stage is eliminated, true slow starting is achieved, the water hammer effect during trichlorosilane feeding is avoided, the sealing surface is provided with the uniform oil film, the dynamic and static friction coefficient difference is reduced, and crawling / jumping in the 0-20% opening low-speed stage is eliminated.

The invention relates to the field of silane production, and discloses an energy-saving type silane production and purification system which comprises a production unit used for converting trichlorosilane into silane gas and a chlorosilane compound and carrying out preliminary separation treatment on the silane gas and the chlorosilane compound. According to the invention, a disproportionation reaction rectification method is adopted, after pressurization by a compressor, the temperature and pressure of silane gas and other chlorosilane compounds are increased, and the boiling point of the chlorosilane compounds is increased, so that the chlorosilane compounds are more easily liquefied at a higher temperature, more effective condensation and separation in a precooler are facilitated, and the yield of the chlorosilane compounds is improved. And through the cooling effect of the precooler, part of the chlorosilane compound is condensed into a liquid state, so that preliminary separation of the chlorosilane compound and gaseous silane gas is realized, part of impurities are removed in advance, the content of the impurities entering the silane separation tower is reduced, and the separation efficiency of the separation tower is improved.

The invention provides a preparation method of bis-[3-(triethoxysilyl) propyl]-disulfide. The preparation method comprises the following steps: S1, under the protection of nitrogen, dropwise adding chloropropene and trichlorosilane into a non-polar solvent, a first catalyst and tripropylamine, reacting at room temperature, taking filtrate, dropwise adding the filtrate into alcohol in a micro-reflux state, reacting, adding a sodium alkoxide / alcohol solution for neutralizing, filtering, and distilling to obtain allyltriethoxysilane; and S2, under ultraviolet light, mixing allyltriethoxysilane, mercaptopropyltriethoxysilane and benzoin dimethyl ether, reacting at room temperature for 2-3 hours, adding sulfur and a second catalyst, carrying out heating reaction, removing low boiling points, cooling, and filtering. According to the preparation method provided by the invention, bis-[3-(triethoxysilyl) propyl]-disulfide is successfully and effectively synthesized, a phase transfer catalyst does not need to be introduced for catalysis, hydrolysis of silane and treatment of saline water are reduced, the yield of single-kettle synthesis is high, and the utilization rate of equipment is high.

The application discloses a kind of feed dynamic regulation methods of synthesizing trichlorosilane, through multispectral synergistic detection, through the accurate calculation of key parameters such as hydroxyl inhibition factor, amorphous phase activity gain and metal impurity inhibition factor, the activity condition of silicon powder in fluidized bed can be accurately and real-time reflected, the technical bottleneck that silicon powder activity cannot be monitored on line is broken through, and then in industrial production, for the proportion of fluidized bed feed etc. Real-time regulation provides control basis.Through feed dynamic regulation mechanism, silicon powder feed rate, H2 / SiCl4 ratio and catalyst addition amount can be optimized in real time, ensure that silicon powder is always in high activity state, promote the reaction to proceed, improve trichlorosilane yield and purity, solve the problem that traditional fixed regulation mode and silicon powder dynamic activity do not match, and then improve regulation accuracy.

The utility model discloses a polycrystalline silicon reduction feeding system which comprises two sets of feeding systems arranged in parallel, liquid outlets of two trichlorosilane buffer tanks of the two sets of feeding systems are communicated through a buffer tank communication pipeline, and a buffer tank communication valve is arranged on the buffer tank communication pipeline; gas outlets of the two vaporizers of the two feeding systems are communicated through a vaporizer communicating pipeline, and a vaporizer communicating valve is arranged on the vaporizer communicating pipeline; outlets of the two superheaters of the two feeding systems are communicated through a superheater communication pipeline, and a superheater communication valve is arranged on the superheater communication pipeline. The feeding system has the advantages that the two original independent feeding systems are communicated, when one feeding system breaks down or needs to be overhauled, the other feeding system can be rapidly switched to supply materials to the whole production line, material communication between the feeding systems on the two sides is achieved, continuous production can be guaranteed, and the production efficiency is improved. The stop frequency caused by equipment faults is effectively reduced, and the stability and continuity of production are greatly improved.

The invention relates to a method and a system for preparing trichlorosilane from ferrosilicon, the method comprises the following steps: taking ferrosilicon, silicon tetrachloride and hydrogen as raw materials, fully reacting in a fluidized bed reactor to obtain trichlorosilane and FeSiy alloy, xlt; 40). The system comprises a fluidized bed reactor (200), a cyclone separator (300), a washing tower (400), a gas-liquid separator (500) and a coarse distillation tower (600). Compared with the prior art, the method has the remarkable characteristics that the silazite is used as a silicon source and is low in cost and easy to obtain, the reaction activity of trichlorosilane and FeSiy generated by reaction of the silazite, silicon tetrachloride and hydrogen is high, the utilization rate of silicon elements in the compound is high, no extra catalyst needs to be added in the co-hydrogenation reaction, meanwhile, the byproduct FeSiy alloy is produced, and the production cost is low.

The invention discloses a silicon carbide epitaxial wafer growth method for improving epitaxial pit defects, which comprises the following steps: firstly, introducing hydrogen into a reaction chamber, raising the temperature of the reaction chamber to a buffer layer growth temperature, and then introducing ethylene and trichlorosilane into the reaction chamber at a first flow rate and a second flow rate to grow and obtain a first buffer layer, the method comprises the following steps: firstly, introducing ethylene and trichlorosilane into a reaction chamber at a third flow rate and a fourth flow rate to obtain a second buffer layer through growth, then reducing the temperature of the reaction chamber to an epitaxial layer growth temperature lower than the growth temperature of the buffer layer, and finally introducing ethylene and trichlorosilane into the reaction chamber at a fifth flow rate and a sixth flow rate to obtain an epitaxial layer through growth, the growth temperature of the epitaxial layer is reduced to be lower than the growth temperature of the buffer layer to grow the epitaxial layer, so that the number of epitaxial pits on the surface of the epitaxial wafer obtained by epitaxial growth can be inhibited, and the quality of the silicon carbide epitaxial wafer is effectively improved.

The invention provides a method for recovering tail gas generated in production of carbon nanotubes. The method comprises the following steps: compression: introducing tail gas containing methane and hydrogen into a compressor for pressurization; first-stage separation: the pressurized tail gas is introduced into a first-stage membrane separator for separation, methane and first-stage tail gas are obtained, and the main component of the first-stage tail gas is hydrogen; and second-stage separation: introducing the first-stage tail gas into a second-stage membrane separator for separation to obtain hydrogen and second-stage tail gas containing hydrogen. Through two-stage membrane separation, methane and hydrogen are recovered, the methane separated in the first stage can return to the continuous furnace to be continuously used as a raw material for producing carbon nanotubes, and the hydrogen separated in the second stage can be used for producing trichlorosilane, so that the recovery and utilization of resources can be realized.

The utility model provides a trichlorosilane purification device in a polycrystalline silicon production process, which belongs to the technical field of trichlorosilane purification devices and comprises a distillation component, the distillation component comprises a distillation barrel, a heating barrel is mounted in the distillation barrel, a top cover is mounted at the top of the distillation barrel, a first gas guide pipe is mounted on the surface of the top cover, and a second gas guide pipe is mounted on the surface of the top cover. A first gas guide pipe is mounted at one end of the heating barrel, a transfer barrel is mounted on the surface of the other end of the first gas guide pipe, a second gas guide pipe is mounted on one side of the bottom of the transfer barrel, a stirring rod is rotatably connected to the interior of the heating barrel, and a plurality of scrapers are mounted on the surface of the stirring rod. According to the method, the purity of trichlorosilane is improved, so that the quality and the purity of a polycrystalline silicon product are improved, meanwhile, impurities and wastes can be separated, the workload of subsequent treatment is reduced, the production efficiency is improved, the energy consumption and the production cost can be reduced, and the resource utilization rate is improved.

[Problem to be solved] Provided is a method that enables effective industrial use of an exhaust gas containing hydrogen to be discharged during production of trichlorosilane.[Solution] Provided is a method for producing trichlorosilane, the method comprising: reacting metallic silicon and tetrachlorosilane with a mixed gas containing hydrogen to generate trichlorosilane. The mixed gas containing hydrogen contains 1 to 500 molar ppm of hydrogen chloride and 100 to 10,000 molar ppm of silane hydride, and the mixed gas is heated at 100° C. to 450° C. and then reacted.

The invention discloses a trichlorosilane deep rectification composite impurity removal process, and belongs to the technical field of polycrystalline silicon production raw material purification. According to the process, deep purification of crude trichlorosilane is achieved through the steps of pre-protection and primary adsorption, directional rectification enrichment of methyl dichlorosilane narrow fractions, concentration, mixing with silicon tetrachloride, catalytic reaction rectification conversion, differential pressure thermal coupling rectification purification, double-tank parallel deep purification, tail gas treatment and the like. According to the method, the impurity methyl dichlorosilane difficult to remove is precisely separated through side extraction, the impurity methyl dichlorosilane is converted into a component easy to separate through a catalytic reaction, and the boron and phosphorus impurities are deeply removed in combination with differential pressure thermal coupling energy saving and double-tank alternate adsorption. The process can efficiently remove moisture, metals and key impurities boron and phosphorus, obviously improves the purity of the trichlorosilane product, realizes gradient utilization of energy and hydrogen circulation, and has the advantages of high purity, low energy consumption and continuous production.

This invention provides an activation method for a liquid fatty amine, a preparation process for the liquid fatty amine and silane, wherein the liquid fatty amine has a tertiary amine group; the activation method involves activating the liquid fatty amine with silicon tetrachloride; this method can significantly improve the catalytic effect of the liquid fatty amine, and the activated liquid fatty amine exhibits higher catalytic activity in the process of disproportionation of trichlorosilane to prepare silane, which can effectively reduce the reaction activation energy, increase the reaction rate, and improve the single-pass reaction efficiency and conversion rate.

The present application relates to a kind of preparation methods of thin layer high resistance silicon epitaxial wafer for photomultiplier tube device, by before the silicon substrate piece is mounted, design and carry out etching and polycrystalline silicon coating layer cycle cleaning process to reaction cavity and graphite base multiple hydrogen chloride gas, the growth environment of reaction cavity is purified, and by accurately adjusting the flow of process hydrogen, the flow of trichlorosilane, the temperature process parameter of silicon epitaxial layer reaction growth in the process of silicon epitaxial layer growth, the growth rate of silicon epitaxial layer is significantly reduced, to extend the reaction process of thin layer silicon epitaxial layer, expand the proportion of steady-state growth phase, realize the high uniformity distribution of thin layer high resistance silicon epitaxial layer, finally obtain a kind of preparation method of thin layer high resistance silicon epitaxial layer, the thickness of silicon epitaxial layer is in 1 μm order of magnitude, process is simple, strong compatibility, greatly improve production efficiency, save production cost, suitable for industrialized continuous production, meet the production order delivery requirements of thin layer high resistance silicon epitaxial wafer for photomultiplier tube device.

The application discloses a silicon powder recovery process in a cold hydrogenation process and a trichlorosilane synthesis process. The silicon powder recovery process in the cold hydrogenation process comprises the following steps: (1) after the residual material of the cold hydrogenation process is subjected to static pressure, a silicon powder mixture containing chlorosilane and a small amount of high-boiling substances is obtained; (2) the silicon powder mixture is dried to obtain silicon residue; (3) after the silicon residue is subjected to neutral high-salt water hydrolysis, solid-liquid separation is performed to obtain solid silicon residue; and (4) the solid silicon residue is subjected to drying and physical screening to remove iron impurities. The silicon powder recovery process in the cold hydrogenation process and the trichlorosilane synthesis process solve the problem of reaction between liquid alkali and silicon powder, improve the silicon content, reduce the content of silicon dioxide impurities, thereby about 60-70% of effective silicon residue in the cold hydrogenation residue slurry is recovered, the silicon residue can be sent to trichlorosilane synthesis, or the silicon residue is mixed with dead ash and then sent to trichlorosilane synthesis, the environmental protection pressure is reduced, and the cost is greatly reduced.

The utility model relates to the technical field of chemical gas recovery, and provides a device for separating trichlorosilane tail gas and co-producing fumed silica, which adopts a combined process to treat the trichlorosilane tail gas and is provided with a rectification separation seat provided with a low-temperature cold energy recovery mechanism. Hydrogen, hydrogen chloride and chlorosilane in the tail gas are separated step by step through the rectification separation assembly, the hydrogen chloride and the chlorosilane are directly conveyed to the combustion assembly, the purity of the hydrogen chloride is recycled to the trichlorosilane tail gas treatment assembly, recycling after separation is achieved, and the purposes of further saving energy consumption and improving the purity are achieved; a fumed silica combustion furnace suitable for low-boiling-point chlorosilane is adopted, so that the chlorosilane and hydrogen are mixed and combusted to generate fumed silica and hydrogen chloride, and the fumed silica can be directly discharged through a fumed silica discharge pipe; and the generated hydrogen chloride is recovered into the trichlorosilane tail gas treatment seat through a second hydrogen chloride return pipe, and closed-loop utilization is realized.

The application discloses a device for producing high-purity silane from trichlorosilane, which comprises a reaction rectifying tower, an auxiliary reaction system, a multistage condensing system, a booster pump and a rectifying system; the side line of the reaction rectifying tower is connected with the auxiliary reaction system; the feed inlet of the multistage condensing system is connected with the top of the reaction rectifying tower, and the liquid phase discharge port of the multistage condensing system is connected with the reaction rectifying tower; the discharge port of the multistage condensing system is connected with the feed inlet of the booster pump, and the discharge port of the booster pump is connected with the rectifying system; and the application further discloses a method for producing high-purity silane by using the device. The device has the advantages of low energy consumption, high reaction efficiency, safety and environmental protection, and high product purity.

The application provides a device and a method for preparing trichlorosilane, and the device comprises a trichlorosilane synthesis system, a dry dust removal system, a wet dust removal system, a heavy component removal and purification system and a slag slurry treatment system; the trichlorosilane synthesis system comprises a trichlorosilane reactor; the dry dust removal system comprises a cyclone separator; the wet dust removal system comprises a spray tower, a reboiler, a heat exchanger and a first condenser; and the heavy component removal and purification system comprises a heavy component removal tower and a carbon adsorption tower. The device combines the pneumatic conveying of silicon powder in the entire polysilicon industry, and combines the energy-saving technology of condensing mixed gas as the liquid phase of spray washing by using the heat exchanger, the energy-saving means of bidirectional extraction of trichlorosilane and tetrachlorosilane components, and the technology of slag slurry concentration and recovery, so that the effective resource integration of the entire system is achieved, the technical effects of low energy consumption and cyclic reuse are fully realized, and a high-purity trichlorosilane production system which can run independently and self-compensate is created.

The application provides a method for absorbing hydrogen chloride in hydrogen gas in polysilicon production hydrogen recovery by using trichlorosilane, comprising the following steps: after cooling compression and chlorosilane separation treatment, the reduction tail gas enters an absorption tower, trichlorosilane is used as an absorbent in the absorption tower to absorb hydrogen chloride in hydrogen gas under high-pressure and low-temperature conditions, high-purity hydrogen gas is generated at the top of the absorption tower, and rich liquid is generated at the bottom of the absorption tower; the rich liquid is sent into a desorption tower to carry out desorption under low-pressure and high-temperature conditions, high-purity hydrogen chloride is generated at the top of the desorption tower, and regenerated lean liquid is generated at the bottom of the desorption tower; and the regenerated lean liquid is mixed with fresh supplemented trichlorosilane after cooling and then returned to the absorption tower to form a cycle.

The utility model provides a treatment system for slag slurry in a trichlorosilane production process. The treatment system comprises an evaporation unit, a chlorosilane recovery unit, a hydrolysis unit and a hydrolysis tank gas treatment unit, the evaporation unit comprises a slurry tank and a cylindrical cone dryer, and a slurry pump is arranged on a slurry pipeline; the chlorosilane recovery unit comprises a heat exchanger and a chlorosilane storage tank, and a liquid outlet of the heat exchanger is communicated with the chlorosilane storage tank; the hydrolysis unit comprises a screw pump, a hydrolysis tank, a rectification high-boiling pipeline and a calcium oxide adding groove, the inlet end of the screw pump is connected with a bottom outlet of the cylindrical cone dryer, the outlet end of the screw pump is connected with an upper feed port of the hydrolysis tank, the outlet end of the rectification high-boiling pipeline is connected with a feed port of the hydrolysis tank, and the calcium oxide adding groove is communicated with the top of the hydrolysis tank; and the hydrolysis tank gas treatment unit is connected with a top gas outlet of the hydrolysis tank. According to the invention, efficient recovery of chlorosilane in the slag slurry generated in the production process of trichlorosilane is realized, and pollution of hydrogen chloride to the environment in the slag slurry treatment process is avoided.

The present invention discloses a feeding device for a reduction furnace in polysilicon production, which includes a bubbling vaporizer, a gas-liquid separator, and further includes a membrane layer unit and a control system. A trichlorosilane feeding pipeline and a hydrogen feeding pipeline are connected to the bubbling vaporizer, which are respectively used for introducing trichlorosilane liquid and hydrogen. The membrane layer unit is arranged in the bubbling vaporizer and is used for generating nano-micro bubbles of hydrogen in the trichlorosilane liquid in the bubbling vaporizer. The control system is used for tracking the liquid level change of the bubbling vaporizer and the feeding flow rate change of the trichlorosilane liquid to adjust the feeding flow rate of the trichlorosilane liquid, and for adjusting the feeding flow rate of hydrogen according to the preset ratio of the feeding flow rate of the trichlorosilane liquid to the feeding flow rate of hydrogen, so as to accurately control the feeding flow rates of trichlorosilane gas and hydrogen and their feeding ratio. The present invention can reduce energy consumption and accurately control the feeding amounts of trichlorosilane gas and hydrogen and their feeding ratio.

This invention discloses a process for the cold hydrogenation of silicon tetrachloride to produce trichlorosilane. Silicon tetrachloride and hydrogen are fed into a bubbling slurry bed reactor for catalytic cold hydrogenation. The bubbling slurry bed reactor uses molten salt as a medium and metal chloride as a catalyst, operating at a temperature of 450–500°C and a reaction pressure of 2.5–4.0 MPaG. This invention features a simple process, meets the requirements for large-scale and continuous production, and boasts low investment, low operating costs, and high safety and reliability. The silicon tetrachloride conversion rate and process flow are simple, and the reactor investment is significantly lower than existing cold hydrogenation reactors, solving the problems of high equipment investment and low reaction conversion rates in existing cold hydrogenation processes.