205 results about "Trichlorohydrin" patented technology

The invention provides a preparation device and process of electronic-grade silane. According to the preparation device, a first disproportionation reaction is carried out on the basis of the first reactor, dichlorosilane is rectified and separated to serve as a raw material for a second disproportionation reaction, silane can be obtained on the basis of cheap trichlorosilane and a catalytic reagent, and electronic-grade silane can be obtained on the basis of traditional purification after rectification; based on heat exchange between tower top materials of the rectifying tower I and a tower kettle reboiler of the rectifying tower II, differential pressure thermal coupling integration is realized, condensing equipment and operation steps can be omitted, energy consumption is reduced, and the defects of high preparation cost and high energy consumption of a silane preparation device in the prior art are overcome.

The utility model discloses a device for removing impurities in trichlorosilane, relates to the technical field of polycrystalline silicon production, and mainly aims to improve the removal efficiency of the impurities in the trichlorosilane on the basis of not increasing the cost. According to the main technical scheme, the device for removing the impurities in the trichlorosilane is characterized in that an inlet of a first mixer is connected to one end of a first feeding pipe and a second feeding pipe, a plurality of baffle plates are arranged in a reaction tank in a staggered mode and used for forming a baffle channel in the reaction tank, and one end of the baffle channel is connected to an outlet of the first mixer; the other end of the baffling channel, the filter and an inlet of the separating tower are sequentially connected, the inlet of the separating tower is further connected to a siloxane conveying pipe, a tower kettle of the separating tower is connected to the other end of the first feeding pipe and used for guiding siloxane to the first mixer, and a top collecting pipe of the separating tower is connected to the rectifying unit; wherein the second feeding pipe is used for guiding a trichlorosilane and dichlorosilane mixture containing impurities to the first mixer.

The invention belongs to the field of polycrystalline silicon preparation, and particularly relates to a technology and system for preparing monosilane through fixed bed catalytic cracking of polycrystalline silicon high-boiling residues, the system comprises a feeding unit, a reaction unit and a condensation recovery unit which are connected in sequence, the feeding unit comprises a storage tank, a feeding pump and a preheating mixer which are connected in sequence, and the reaction unit comprises a reaction unit and a condensation recovery unit which are connected in sequence. The preheating mixer is also connected with a hydrogen feeding pipeline, the reaction unit is a fixed bed catalytic reactor filled with a catalyst, and the condensation recovery unit comprises at least one stage of cooler and a recovery tank. By adopting the system, the process disclosed by the invention has the advantages of extremely simple process, high yield, capability of realizing long-term, continuous and stable production, environmental friendliness, easiness in material separation, high conversion rate, good target product selectivity and high trichlorosilane content in a final product.

The invention provides a rectification system and a rectification method for trichlorosilane multi-tower differential pressure coupling. In the rectification system, a tower kettle outlet of a primary coarse distillation tower is communicated with a raw material inlet of a secondary coarse distillation tower; a tower top outlet of the crude distillation secondary tower is communicated with a first reboiler and a fourth reboiler respectively and then is communicated with a raw material inlet of the crude distillation tertiary tower; a tower top outlet of the crude distillation third-stage tower is communicated with a raw material inlet of the rectification first-stage tower, a tower kettle outlet of the rectification first-stage tower is communicated with a raw material inlet of the rectification second-stage tower, and a tower kettle outlet of the rectification second-stage tower is communicated with a raw material inlet of the crude distillation third-stage tower; a tower top outlet of the primary reduction tower is communicated with a fifth reboiler, and a tower top outlet of the secondary rectification tower is communicated with a third reboiler and then is subjected to a reduction process. According to the system, the reflux ratio of the primary crude distillation tower to the primary rectification tower can be reduced, the energy consumption in the trichlorosilane rectification process can be effectively saved, and the equipment investment and operation cost can be reduced.

The invention discloses a catalyst for preparing trichlorosilane and a catalytic preparation method of trichlorosilane. The catalyst is prepared from the following components in percentage by mass: weighed copper nitrate, zinc nitrate, aluminum nitrate, lanthanum nitrate and the balance of a carrier, the preparation method comprises the following specific steps: S1, filling a catalyst; S2, purifying raw material gas; S3, reacting; and S4, separating and purifying a product, namely discharging a reacted gas product from an outlet of a reactor, and condensing through a condenser. In the prepared catalyst, the activity and selectivity of the catalyst are remarkably improved through the synergistic effect of the copper-zinc-aluminum composite oxide and the rare earth element lanthanum, the electronic structure and the surface acid-base property of the catalyst can be adjusted through doping of lanthanum, the reaction of silicon powder and hydrogen chloride is promoted, meanwhile, side reactions are inhibited, and the service life of the catalyst is prolonged. And the yield of trichlorosilane is improved.

The invention belongs to the technical field of trichlorosilane purification, and discloses an adsorbent for adsorbing phosphorus impurities in trichlorosilane and a preparation method and application thereof.The preparation method comprises the steps that activated carbon is immersed in a solution containing ammonium metavanadate and oxalic acid, ultrasonic treatment and drying are conducted, and a vanadium oxide / carbon material mixture is obtained; calcining the vanadium oxide / carbon material mixture, and performing reduction treatment to obtain the oxygen vacancy-rich activated carbon loaded vanadium oxide adsorbent. The activated carbon loaded vanadium oxide adsorbent rich in oxygen vacancies is prepared by using a dipping-calcining-reducing method, and phosphorus impurities are adsorbed and removed by using the interaction of the activated carbon loaded vanadium oxide adsorbent and PCl3. The active carbon loaded vanadium oxide adsorbent rich in oxygen vacancies interacts with PCl3, so that trace PCl3 can be efficiently removed.

The invention belongs to the technical field of chlorosilane synthesis, and relates to a method for preparing phenyl trichlorosilane by using a trichlorosilane byproduct and the prepared phenyl trichlorosilane. The method comprises the following steps: firstly, taking metal silicon powder and hydrogen chloride gas as raw materials, reacting in a synthetic furnace under the action of a catalyst, and dedusting and cooling a reaction product to obtain a trichlorosilane crude product; rectifying the trichlorosilane crude product to obtain a high-boiling-point substance; and finally, under the irradiation of ultraviolet light, reacting the high-boiling-point substance serving as a raw material with chlorobenzene, and performing low-boiling-point removal and rectification to obtain the phenyl trichlorosilane. According to the method, the trichlorosilane by-product can be effectively utilized, and the problems of high cost, serious material waste and serious environmental pollution in the treatment process of the trichlorosilane by-product in the prior art are solved. The method is mild in condition and low in equipment requirement, and phenyl trichlorosilane can be prepared without a high-temperature thermal condensation reaction. According to the phenyl trichlorosilane obtained by the method, the yield is close to 80%, impurities are few, and the gas phase content reaches 99% or above.

The invention provides an efficient trichlorosilane synthetic furnace and an intelligent temperature control method thereof. The efficient trichlorosilane synthetic furnace comprises a reactor body and an intelligent temperature control module, the reactor body comprises a shell; the shell comprises a conical area and a cylindrical area; the cylindrical area sequentially comprises a lower-section reaction area, a middle-section reaction area and an upper-section reaction area from bottom to top, and cooling devices are independently arranged on the outer sides of the reaction areas respectively; an internal part is arranged in the lower section reaction area; the intelligent temperature control module comprises a temperature sensor unit, an intelligent control unit and a flow adjusting unit. According to the invention, by arranging the internal part and the intelligent temperature control module, intelligent temperature control is realized, the temperature uniformity of each reaction area in the trichlorosilane synthetic furnace is effectively improved, and the conversion rate of trichlorosilane is greatly improved.

The invention relates to the technical field of trichlorosilane processing, in particular to equipment and method for removing boron and phosphorus impurities from trichlorosilane, the equipment comprises an adsorption column used for adsorbing trichlorosilane, the adsorption column is filled with an adsorbent, and the adsorbent is specially used for removing the boron and phosphorus impurities in trichlorosilane; the jacket is arranged on the outer wall of the adsorption column and is used for regulating and controlling the temperature in the adsorption column, a pipeline connected with the jacket is divided into an inlet part and an outlet part, and the inlet part and the outlet part are respectively provided with a regulating valve and a stop valve and are used for controlling a medium and flow which are introduced into the jacket. A multi-section adsorbent and a jacket temperature control system are adopted, so that boron and phosphorus impurities in trichlorosilane are efficiently removed. The design of the multi-section adsorbent allows different types of adsorbents to selectively adsorb specific impurities, so that the removal efficiency is improved. And each adsorbent can exert the optimal performance under different temperature and pressure conditions.

The invention relates to the technical field of chemical engineering, and discloses a trichlorosilane hydrogen reduction polycrystalline silicon growth monitoring system fusing multi-source data. Comprising a multi-sensor monitoring module, a multi-sensor data acquisition module, a multi-source data preprocessing module, a growth process data analysis module, a growth state online evaluation module, a process parameter online regulation and control module, a regulation and control result feedback module and a system collaborative management module, the multi-sensor monitoring module monitors the growth process of trichlorosilane hydrogen reduction polycrystalline silicon through multiple sensors, the multi-sensor data acquisition module acquires original data, the multi-source data preprocessing module preprocesses the data, the growth process data analysis module carries out data calculation, and the growth state online evaluation module carries out online comprehensive evaluation. The process parameter online regulation and control module regulates and controls process parameters online, the regulation and control result feedback module generates an adjustment strategy, and the system collaborative management module performs system parameter recording and storage, system optimization and exception handling.

The invention discloses an ICP-MS (Inductively Coupled Plasma Mass Spectrometry) detection method for phosphorus in trichlorosilane, and belongs to the field of analysis of high-purity electronic chemicals. According to the invention, a low-temperature matrix digestion technology is adopted to quantitatively form a SiFcomplex and inhibit silicon volatilization loss; according to the matrix matching calibration system, a calibration curve is constructed by adopting a weighted least square method, so that matrix interference is effectively corrected; a detection technology screening strategy is carried out by combining a cascade strategy of high-resolution inductively coupled plasma mass spectrometry, so that the interference of a complex matrix is successfully avoided. Experiments show that when the method is used for detecting phosphorus, the linear correlation coefficient R is greater than 0.999, the detection limit is as low as 0.02 ng / g, and the method accords with ISO 17025 and semiconductor-grade material quality control standards, and is suitable for accurate quantitative analysis of ng / g-grade phosphorus elements in high-purity trichlorosilane.

The utility model provides a system for synthesizing trichlorosilane. The system for synthesizing trichlorosilane comprises a trichlorosilane synthesis reaction device, a first gas-solid separation unit, a first tail gas treatment unit, a silicon tetrachloride hydrogenation reaction device, a second gas-solid separation unit, a second tail gas treatment unit and a product separation and purification unit. According to the system, through the technological process of fusing the trichlorosilane synthesis reaction and the silicon tetrachloride hydrogenation reaction, efficient utilization of silicon powder, hydrogen and silicon tetrachloride is achieved, the investment and operation cost is saved, and meanwhile the raw material consumption is reduced.

The invention discloses a low-expansion silicon-carbon negative electrode material and a preparation method thereof, and belongs to the technical field of secondary batteries. The invention relates to a preparation method of a low-expansion silicon-carbon negative electrode material. The preparation method comprises the following steps: S1, depositing SiO2: depositing porous carbon for the first time by adopting silane with at least two ethyoxyl groups or methoxyl groups; then calcining to obtain a SiO2 deposition layer; s2, silicon deposition: carrying out secondary deposition on the material obtained in the step S1 by adopting monosilane, disilane and / or trichlorosilane; and S3, carbon coating: carrying out carbon coating on the material obtained in the step S2 by using a carbon source gas. According to the low-expansion silicon-carbon negative electrode material disclosed by the invention, porous carbon is firstly subjected to deposition modification by utilizing SiO2 deposition, so that the overall structural strength of a framework is improved; after silane deposition, silicon of the second deposition layer and silicon dioxide of the first deposition layer can react to generate SiO, and volume expansion of silicon crystal grains can be relieved.

The invention provides a continuous synthesis system of gamma-chloropropyltrichlorosilane. The continuous synthesis system comprises a trichlorosilane storage tank, a chloropropene storage tank, a catalyst storage tank, a static mixer, an n-stage series tubular reaction system and a rectification device, the tubular reaction system comprises a tubular reactor, a back pressure valve, a degassing device and a condenser; a liquid phase outlet of the degassing device and a liquid phase outlet of the condenser are connected with a next-stage tubular reactor; the trichlorosilane storage tank, the chloropropene storage tank and the catalyst storage tank are respectively connected with an inlet of the static mixer, and an outlet of the static mixer is connected with the first-stage tubular reactor; the inlet feed of the second to nth stages of tubular reactors comprises chloropropene; a liquid phase outlet of the nth-stage degassing device is connected with an inlet of the rectification device, and the rectification device is connected back to the first-stage tubular reactor and outputs a gamma-chloropropyltrichlorosilane product. The reaction efficiency and the conversion rate are improved, and the production energy consumption and the cost are low. The invention further provides a synthesis method based on the system, and the technological process is simple.

The utility model relates to a trichlorosilane adsorption tower in the technical field of adsorption equipment, which comprises a tower body, an air inlet pipe and an emptying pipe are arranged at the bottom of the tower body, and an exhaust pipe is arranged at the top of the tower body; the interior of the tower body is divided into a spraying area and an adsorption area from bottom to top, a spraying pipe is arranged at the top of the spraying area, a spherical gas distribution plate is arranged at the bottom of the spraying area, gas distribution holes are fully distributed in the gas distribution plate, and the gas inlet pipe is located below the gas distribution plate; the adsorption area comprises a filler layer, the filler layer is an activated carbon layer, a heat exchange assembly is arranged in the filler layer, the heat exchange assembly comprises a coiled pipe, and the coiled pipe is connected with a medium inlet pipe and a medium outlet pipe. According to the utility model, trichlorosilane can be subjected to impurity removal and purification after spraying and adsorption in sequence, the efficiency is high, and the effect is good; the temperature of the filler area can be flexibly adjusted according to needs, the adsorption effect can be improved, the filler can be purified, and the next adsorption effect is not affected.

The utility model discloses an energy-saving rectification system for electronic-grade silane gas production. The energy-saving rectification system comprises a stripping tower condenser arranged on a stripping tower, and a trichlorosilane evaporator connected with a trichlorosilane tower, the trichlorosilane tower is respectively connected with a stripping tower reboiler arranged on the stripping tower and a dichlorosilane reboiler arranged on the dichlorosilane tower, the trichlorosilane tower is connected with a trichlorosilane return tank through a trichlorosilane air cooler, and the trichlorosilane return tank is respectively connected with the trichlorosilane tower and the dichlorosilane tower; the dichlorosilane tower is provided with a dichlorosilane air cooler, the dichlorosilane air cooler is connected with a dichlorosilane return tank, and the dichlorosilane return tank is respectively connected to the dichlorosilane tower and the second reactor feeding preheater; a discharge preheater of the first reactor is connected to a trichlorosilane tower, a discharge port of the second reactor is connected with a silane tower, and the silane tower is respectively connected with a dichlorosilane tower and a post-stripping tower. Therefore, efficient production of the electronic-grade silane gas is realized.

The invention discloses a slow-start pneumatic switch valve device for trichlorosilane feeding, and belongs to the technical field of material preparation process valves. Comprising a switch valve and a pneumatic actuator, linear motion of a piston rod is converted into rotation fine adjustment through a swing arm rotation compensation mechanism, a solid / microgroove sealing ring and a sliding cavity wall are always kept on a theoretical contact line, abrasion microgaps are automatically compensated, zero-clearance sliding in the whole life cycle is achieved, and manual clearance adjustment is avoided; the solid sealing ring adopts surface-surface contact, so that the unit pressure is reduced by more than 50%, and the wear rate is obviously reduced; the omega-shaped groove of the microgroove sealing ring converts solid particles (10-50 microns Si) into groove edge elastic sealing, and the wear rate is reduced by 40% again; a sealing surface is provided with a uniform oil film, the dynamic and static friction coefficient difference is reduced, crawling / jumping in a 0-20% opening low-speed stage is eliminated, true slow starting is achieved, the water hammer effect during trichlorosilane feeding is avoided, the sealing surface is provided with the uniform oil film, the dynamic and static friction coefficient difference is reduced, and crawling / jumping in the 0-20% opening low-speed stage is eliminated.

The invention relates to the field of silane production, and discloses an energy-saving type silane production and purification system which comprises a production unit used for converting trichlorosilane into silane gas and a chlorosilane compound and carrying out preliminary separation treatment on the silane gas and the chlorosilane compound. According to the invention, a disproportionation reaction rectification method is adopted, after pressurization by a compressor, the temperature and pressure of silane gas and other chlorosilane compounds are increased, and the boiling point of the chlorosilane compounds is increased, so that the chlorosilane compounds are more easily liquefied at a higher temperature, more effective condensation and separation in a precooler are facilitated, and the yield of the chlorosilane compounds is improved. And through the cooling effect of the precooler, part of the chlorosilane compound is condensed into a liquid state, so that preliminary separation of the chlorosilane compound and gaseous silane gas is realized, part of impurities are removed in advance, the content of the impurities entering the silane separation tower is reduced, and the separation efficiency of the separation tower is improved.

The invention provides a preparation method of bis-[3-(triethoxysilyl) propyl]-disulfide. The preparation method comprises the following steps: S1, under the protection of nitrogen, dropwise adding chloropropene and trichlorosilane into a non-polar solvent, a first catalyst and tripropylamine, reacting at room temperature, taking filtrate, dropwise adding the filtrate into alcohol in a micro-reflux state, reacting, adding a sodium alkoxide / alcohol solution for neutralizing, filtering, and distilling to obtain allyltriethoxysilane; and S2, under ultraviolet light, mixing allyltriethoxysilane, mercaptopropyltriethoxysilane and benzoin dimethyl ether, reacting at room temperature for 2-3 hours, adding sulfur and a second catalyst, carrying out heating reaction, removing low boiling points, cooling, and filtering. According to the preparation method provided by the invention, bis-[3-(triethoxysilyl) propyl]-disulfide is successfully and effectively synthesized, a phase transfer catalyst does not need to be introduced for catalysis, hydrolysis of silane and treatment of saline water are reduced, the yield of single-kettle synthesis is high, and the utilization rate of equipment is high.

The application discloses a kind of feed dynamic regulation methods of synthesizing trichlorosilane, through multispectral synergistic detection, through the accurate calculation of key parameters such as hydroxyl inhibition factor, amorphous phase activity gain and metal impurity inhibition factor, the activity condition of silicon powder in fluidized bed can be accurately and real-time reflected, the technical bottleneck that silicon powder activity cannot be monitored on line is broken through, and then in industrial production, for the proportion of fluidized bed feed etc. Real-time regulation provides control basis.Through feed dynamic regulation mechanism, silicon powder feed rate, H2 / SiCl4 ratio and catalyst addition amount can be optimized in real time, ensure that silicon powder is always in high activity state, promote the reaction to proceed, improve trichlorosilane yield and purity, solve the problem that traditional fixed regulation mode and silicon powder dynamic activity do not match, and then improve regulation accuracy.

The utility model discloses a polycrystalline silicon reduction feeding system which comprises two sets of feeding systems arranged in parallel, liquid outlets of two trichlorosilane buffer tanks of the two sets of feeding systems are communicated through a buffer tank communication pipeline, and a buffer tank communication valve is arranged on the buffer tank communication pipeline; gas outlets of the two vaporizers of the two feeding systems are communicated through a vaporizer communicating pipeline, and a vaporizer communicating valve is arranged on the vaporizer communicating pipeline; outlets of the two superheaters of the two feeding systems are communicated through a superheater communication pipeline, and a superheater communication valve is arranged on the superheater communication pipeline. The feeding system has the advantages that the two original independent feeding systems are communicated, when one feeding system breaks down or needs to be overhauled, the other feeding system can be rapidly switched to supply materials to the whole production line, material communication between the feeding systems on the two sides is achieved, continuous production can be guaranteed, and the production efficiency is improved. The stop frequency caused by equipment faults is effectively reduced, and the stability and continuity of production are greatly improved.

The invention relates to a method and a system for preparing trichlorosilane from ferrosilicon, the method comprises the following steps: taking ferrosilicon, silicon tetrachloride and hydrogen as raw materials, fully reacting in a fluidized bed reactor to obtain trichlorosilane and FeSiy alloy, xlt; 40). The system comprises a fluidized bed reactor (200), a cyclone separator (300), a washing tower (400), a gas-liquid separator (500) and a coarse distillation tower (600). Compared with the prior art, the method has the remarkable characteristics that the silazite is used as a silicon source and is low in cost and easy to obtain, the reaction activity of trichlorosilane and FeSiy generated by reaction of the silazite, silicon tetrachloride and hydrogen is high, the utilization rate of silicon elements in the compound is high, no extra catalyst needs to be added in the co-hydrogenation reaction, meanwhile, the byproduct FeSiy alloy is produced, and the production cost is low.

The invention discloses a silicon carbide epitaxial wafer growth method for improving epitaxial pit defects, which comprises the following steps: firstly, introducing hydrogen into a reaction chamber, raising the temperature of the reaction chamber to a buffer layer growth temperature, and then introducing ethylene and trichlorosilane into the reaction chamber at a first flow rate and a second flow rate to grow and obtain a first buffer layer, the method comprises the following steps: firstly, introducing ethylene and trichlorosilane into a reaction chamber at a third flow rate and a fourth flow rate to obtain a second buffer layer through growth, then reducing the temperature of the reaction chamber to an epitaxial layer growth temperature lower than the growth temperature of the buffer layer, and finally introducing ethylene and trichlorosilane into the reaction chamber at a fifth flow rate and a sixth flow rate to obtain an epitaxial layer through growth, the growth temperature of the epitaxial layer is reduced to be lower than the growth temperature of the buffer layer to grow the epitaxial layer, so that the number of epitaxial pits on the surface of the epitaxial wafer obtained by epitaxial growth can be inhibited, and the quality of the silicon carbide epitaxial wafer is effectively improved.

The invention provides a method for recovering tail gas generated in production of carbon nanotubes. The method comprises the following steps: compression: introducing tail gas containing methane and hydrogen into a compressor for pressurization; first-stage separation: the pressurized tail gas is introduced into a first-stage membrane separator for separation, methane and first-stage tail gas are obtained, and the main component of the first-stage tail gas is hydrogen; and second-stage separation: introducing the first-stage tail gas into a second-stage membrane separator for separation to obtain hydrogen and second-stage tail gas containing hydrogen. Through two-stage membrane separation, methane and hydrogen are recovered, the methane separated in the first stage can return to the continuous furnace to be continuously used as a raw material for producing carbon nanotubes, and the hydrogen separated in the second stage can be used for producing trichlorosilane, so that the recovery and utilization of resources can be realized.

The utility model provides a trichlorosilane purification device in a polycrystalline silicon production process, which belongs to the technical field of trichlorosilane purification devices and comprises a distillation component, the distillation component comprises a distillation barrel, a heating barrel is mounted in the distillation barrel, a top cover is mounted at the top of the distillation barrel, a first gas guide pipe is mounted on the surface of the top cover, and a second gas guide pipe is mounted on the surface of the top cover. A first gas guide pipe is mounted at one end of the heating barrel, a transfer barrel is mounted on the surface of the other end of the first gas guide pipe, a second gas guide pipe is mounted on one side of the bottom of the transfer barrel, a stirring rod is rotatably connected to the interior of the heating barrel, and a plurality of scrapers are mounted on the surface of the stirring rod. According to the method, the purity of trichlorosilane is improved, so that the quality and the purity of a polycrystalline silicon product are improved, meanwhile, impurities and wastes can be separated, the workload of subsequent treatment is reduced, the production efficiency is improved, the energy consumption and the production cost can be reduced, and the resource utilization rate is improved.

The present invention provides a method and system for purifying hydrogen used in polysilicon production, as well as a method and system for polysilicon production. The purification method includes the following steps: introducing hydrogen used in polysilicon production into boiling trichlorosilane so that the internal moisture reacts with trichlorosilane, and then making the gas phase escaping from trichlorosilane contact with the atomized trichlorosilane sprayed downwards so that the remaining water vapor in it reacts with trichlorosilane to obtain a water-removed gas phase; the water-removed gas phase is then condensed to liquefy the vaporized trichlorosilane in it, and hydrogen used in polysilicon production with impurities removed is obtained. The present invention can dry the moisture in hydrogen used in polysilicon production to less than 1 ppm without introducing external impurities.

The invention relates to trichlorosilane conveying equipment which comprises at least one CEM evaporator, the CEM evaporator is connected with a TCS liquid inlet pipeline, a carrier gas inlet pipeline, a process gas outlet pipeline, a blow-off pipeline and a purging pipeline, the TCS liquid inlet pipeline is connected with a TCS stock solution tank, a trichlorosilane solution is stored in the TCS stock solution tank, liquid is poured into the CEM evaporator through the TCS liquid inlet pipeline, and the CEM evaporator is connected with the carrier gas inlet pipeline. The TCS liquid inlet pipeline is connected with a process gas outlet pipeline, the carrier gas inlet pipeline is connected with an external hydrogen tank, the purging pipeline is connected with a purging tank, high-purity nitrogen is placed in the purging tank as purging gas, each pipeline is provided with a valve control switch, and when the CEM evaporator works, valves of the TCS liquid inlet pipeline, the carrier gas inlet pipeline and the process gas outlet pipeline are opened, and valves of the purging pipeline and a blow-off pipeline are closed. During cleaning, the valves of the purging pipeline and the blow-off pipeline are opened, and the valves of the TCS liquid inlet pipeline, the carrier gas inlet pipeline and the process gas outlet pipeline are closed. The device has the advantages of simple and reasonable structure, stable and efficient operation and the like.

[Problem to be solved] Provided is a method that enables effective industrial use of an exhaust gas containing hydrogen to be discharged during production of trichlorosilane.[Solution] Provided is a method for producing trichlorosilane, the method comprising: reacting metallic silicon and tetrachlorosilane with a mixed gas containing hydrogen to generate trichlorosilane. The mixed gas containing hydrogen contains 1 to 500 molar ppm of hydrogen chloride and 100 to 10,000 molar ppm of silane hydride, and the mixed gas is heated at 100° C. to 450° C. and then reacted.

The invention discloses a trichlorosilane deep rectification composite impurity removal process, and belongs to the technical field of polycrystalline silicon production raw material purification. According to the process, deep purification of crude trichlorosilane is achieved through the steps of pre-protection and primary adsorption, directional rectification enrichment of methyl dichlorosilane narrow fractions, concentration, mixing with silicon tetrachloride, catalytic reaction rectification conversion, differential pressure thermal coupling rectification purification, double-tank parallel deep purification, tail gas treatment and the like. According to the method, the impurity methyl dichlorosilane difficult to remove is precisely separated through side extraction, the impurity methyl dichlorosilane is converted into a component easy to separate through a catalytic reaction, and the boron and phosphorus impurities are deeply removed in combination with differential pressure thermal coupling energy saving and double-tank alternate adsorption. The process can efficiently remove moisture, metals and key impurities boron and phosphorus, obviously improves the purity of the trichlorosilane product, realizes gradient utilization of energy and hydrogen circulation, and has the advantages of high purity, low energy consumption and continuous production.

This invention provides an activation method for a liquid fatty amine, a preparation process for the liquid fatty amine and silane, wherein the liquid fatty amine has a tertiary amine group; the activation method involves activating the liquid fatty amine with silicon tetrachloride; this method can significantly improve the catalytic effect of the liquid fatty amine, and the activated liquid fatty amine exhibits higher catalytic activity in the process of disproportionation of trichlorosilane to prepare silane, which can effectively reduce the reaction activation energy, increase the reaction rate, and improve the single-pass reaction efficiency and conversion rate.