The invention discloses a reduction device and a process for efficiently producing polycrystalline silicon. The device comprises a material mixing system, a material vaporization system, and a systemfor reducing chlorosilane to form polycrystalline siliconpolysilicon, wherein the material mixing system comprises a trichlorosilane feed regulating valve, a dichlorosilane feed regulating valve and amaterial mixer; the ratio of dichlorosilane is adjusted at different stages in a reduction process. The vaporization system uses 1 MPa of steam as a heat source to vaporize the dichlorosilane, trichlorosilane and hydrogen into 0.9-1 MPa of mixed gas. The polycrystalline siliconpolysilicon generation system mainly refers to a chemical vapor deposition (CVD) reduction furnace, and the CVD reductionfurnace mainly consists of two parts, i.e., a chassis and a furnace cylinder, wherein electrodes, feed spray nozzles and a gas outlet are distributed on the chassis of the reduction furnace, and thearrangement of the spray nozzles can be adjusted. By means of optimization of the spray nozzles, the ratio of the dichlorosilane, the amount of materials, the current increase amount and the like areadjusted at the different stages of the reduction process, so that the deposition rate of silicon is increased under the premise of guaranteeing stable operation of the reduction process, and the purpose of reducing power consumption is achieved.