Source mask polarization optimization method based on Abbe vector imaging model
A technology of imaging model and optimization method, which is applied in the direction of original parts for photomechanical processing, optics, microlithography exposure equipment, etc., can solve the problem of affecting SMPO optimization effect and computing efficiency, it is difficult to obtain the global optimal solution, and reduce optimization Algorithmic operation efficiency and other issues
Active Publication Date: 2015-05-20
BEIJING INSTITUTE OF TECHNOLOGYGY
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However, the above method has the following three disadvantages: First, this method is based on the scalar imaging model of the lithography system, so it is not suitable for high NA lithography systems
Second, the above method is based on a non-analytic discrete optimization process. During the iterative process, the light source intensity, polarization state distribution and mask topology parameters are constantly adjusted to seek a better parameter combination, so it is difficult to obtain a global optimal solution.
Third, the above method needs to call Prolith professional simulation software in each optimization iteration to calculate the current imaging quality evaluation function, thus reducing the computational efficiency of the optimization algorithm
The above defects of the existing method affect the optimization effect and operation efficiency of SMPO
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[0055] The present invention will be further described in detail below in conjunction with the accompanying drawings.
[0056] The principle of the present invention: when the light passes through the mask and forms an image in the photoresist that is the same as or similar to the target pattern, the pattern printed on the wafer in the photolithography system has a very high imaging quality. Therefore the present invention constructs the optimized objective function D of SESMPO as the square of the Euler distance between the imaging in the photoresist corresponding to the target figure and the light source, the mask and the electric vector direction angle of the polarization state; as the size of the target figure is N ×N, then is the pixel value of each point in the target pattern, Z(x, y) is the imaged pixel value in the photoresist corresponding to the light source, mask and polarization state electric vector direction angle, Z(x, y) and The values are 0 or 1.
[00...
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The invention relates to a sequential source mask polarization optimization method based on an Abbe vector imaging model. The method comprises the steps of setting a graphic pixel value of a light source, transmissivity of an opening part and a light resisting part in a mask, an electric vector direction angle of a polarization state, setting variable matrices omega S, omega M and phi, constructing an objective function D into a square of an Euler distance between an objective graphic and an image in photoresist corresponding to the current light source, the mask and the electric vector direction angle of the polarization state, and guiding an alternative optimization process of a light source graphic, a mask graphic and the electric vector direction angle of the polarization state with gradient information of the objective function D to the variable matrices omega S, omega M and phi. The method can improve the imaging quality of a photoetching system more effectively, and is applicable to a small NA (Numerical Aperture) situation and a situation with the NA greater than 0.6.
Description
technical field [0001] The invention relates to a light source-mask-polarization state optimization method based on an Abbe (Abbe) vector imaging model, and belongs to the technical field of lithographic resolution enhancement. Background technique [0002] The current large-scale integrated circuits are generally manufactured using photolithography systems. The lithography system mainly includes four parts: illumination system (including light source and condenser), mask, projection system and wafer. The light emitted by the light source is focused by the condenser and then enters the mask, and the opening part of the mask transmits light; after passing through the mask, the light is incident on the wafer coated with photoresist through the projection system, so that the mask pattern is copied on the wafer. [0003] The current mainstream lithography system is the 193nm ArF deep ultraviolet lithography system. As the lithography technology node enters 45nm-22nm, the critic...
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Inventor马旭李艳秋韩春营董立松高杰陈譞博
OwnerBEIJING INSTITUTE OF TECHNOLOGYGY