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Method for determining focus position correction, photolithography processing element and device manufacturing method

A technology of focusing position and lithography unit, which is used in microlithography exposure equipment, photoengraving process of pattern surface, optics, etc.

Inactive Publication Date: 2016-08-17
ASML NETHERLANDS BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This approach can result in a focus position that is up to 50 times more sensitive to misalignment than LVT (typically dX,Y / dZ=20)

Method used

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  • Method for determining focus position correction, photolithography processing element and device manufacturing method
  • Method for determining focus position correction, photolithography processing element and device manufacturing method
  • Method for determining focus position correction, photolithography processing element and device manufacturing method

Examples

Experimental program
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Embodiment Construction

[0027] figure 1 A lithographic apparatus is schematically shown. The equipment includes:

[0028] - an illumination system (illuminator) IL configured to condition a radiation beam B (eg, ultraviolet (UV) radiation or deep ultraviolet (DUV) radiation);

[0029] - a support structure (eg mask table) MT configured to support the patterning device (eg mask) MA and connected to first positioning means PM configured to precisely position the patterning device according to determined parameters;

[0030] - a substrate table (e.g. a wafer table) WT configured to hold a substrate (e.g. a resist-coated wafer) W and associated with a second positioning device PW configured to precisely position the substrate according to determined parameters connected; and

[0031] - a projection system (e.g. a refractive projection lens system) PL configured to project the pattern imparted to the radiation beam B by the patterning device MA onto a target portion C of the substrate W (e.g. comprisin...

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PUM

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Abstract

A method and related apparatus for determining a focus correction amount of a lithographic projection apparatus are disclosed. The method includes: exposing a plurality of global correction fields on a test substrate, each global correction field including a plurality of global correction marks, and each correction mark is bias-exposed with a tilted focus position thereon; measuring the plurality of each of the global correction marks depends on the focus position characteristics to determine inter-field focus position change information; and calculate the inter-field focus position correction amount according to the inter-field focus position change information.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of US Provisional Application 61 / 529,586, filed August 31, 2011, the entire contents of which are hereby incorporated by reference. technical field [0003] The invention relates to an inspection method that can be used, for example, in the manufacture of devices by photolithographic techniques. Background technique [0004] A lithographic apparatus is a machine that applies a desired pattern to a substrate, usually to a target portion of said substrate. For example, lithographic equipment may be used in the manufacture of integrated circuits (ICs). In this case, a patterning device, alternatively referred to as a mask or reticle, may be used to generate the circuit pattern to be formed on the individual layers of the IC. The pattern can be transferred onto a target portion (eg, comprising a portion, one or more dies) on a substrate (eg, a silicon wafer). Typically, the pattern is...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20
CPCG03F7/70641G03F7/70616G03F7/70625G03F9/7026
Inventor A·基斯特曼A·基尔W·泰尔T·希尤维斯
Owner ASML NETHERLANDS BV