Unlock instant, AI-driven research and patent intelligence for your innovation.

Laser annealing device and annealing method

A laser annealing and main laser technology, applied in laser welding equipment, electrical components, circuits, etc., can solve the problems of poor laser annealing effect and achieve the effect of precise annealing effect

Active Publication Date: 2016-09-28
SEMICON MFG INT (SHANGHAI) CORP
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The object of the present invention is to provide a laser annealing device and annealing method to solve the problem of poor laser annealing effect in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Laser annealing device and annealing method
  • Laser annealing device and annealing method
  • Laser annealing device and annealing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] The laser annealing device provided by the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form, and are only used for the purpose of conveniently and clearly assisting in describing the embodiments of the present invention.

[0035] The core idea of ​​the embodiment of the present invention is to make full use of the influence of photons on the bandgap of the mask, and purposefully use lasers of different frequencies to widen the bandgap to different degrees at different positions of the mask, so that the low frequency The laser can pass through, and by adjusting the optical path difference, the transmittance of the low-frequency laser can be precisely controlled, so that scanning lasers with different energies can...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a laser annealing device and an annealing method. The light emitted by a laser source is divided into a main laser and a modulation laser array. The modulation laser array arrives on a mask prior to the main laser for different time intervals to broaden the band gap of the mask differently at different positions of the mask so as to make the main laser can transmit the mask according to different transmittances, and an absorption diaphragm absorbs the modulation laser array and used to make the transmitted main laser go out in a lossless manner, so that annealing lasers of different intensities can be formed for different surfaces of wafers so as to realize the accurate annealing effect.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a laser annealing device and an annealing method. Background technique [0002] As we all know, in the semiconductor manufacturing process, the doped substances need to be activated, and annealing the substrate is a more practical method. The traditional method mainly uses a specific furnace tube for annealing. [0003] With the continuous progress of integrated circuit technology, especially the development of technology nodes such as 45nm and 28nm, the requirements for source and drain regions of devices are getting higher and higher. The traditional annealing method can no longer meet the needs, so laser annealing is used Came into being. [0004] Due to its high energy and short action time, laser annealing can effectively ensure that the dopant is activated while reducing diffusion or even no diffusion, so that a high-quality structure can be obtained. Howe...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/268H01L21/324
CPCB23K26/0626H01L21/268
Inventor 蔡博修
Owner SEMICON MFG INT (SHANGHAI) CORP