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Beamline Configurations to Reduce Energy Impurities

An energy impurity, beamline technology used in measuring devices, measuring heat, thermometers for material expansion/contraction, etc.

Active Publication Date: 2016-08-17
AXCELIS TECHNOLOGIES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, focusing only on reducing charge exchange ignores other sources of EC

Method used

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  • Beamline Configurations to Reduce Energy Impurities
  • Beamline Configurations to Reduce Energy Impurities
  • Beamline Configurations to Reduce Energy Impurities

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Embodiment Construction

[0014] The present invention will now be elucidated with reference to the drawings, wherein like numerals are used to refer to like elements throughout. These descriptions and the following are exemplary in nature and not limiting. Accordingly, it should be understood that variations of the systems and methods shown, and other similar embodiments other than those shown herein, are considered to be within the scope of the invention and the claims thereto.

[0015] The ion implantation performed in many existing semiconductor manufacturing processes is shallow and / or ultra-shallow implantation, which creates shallow junction depths and / or ultra-shallow junction depths in the formed devices. These shallow and / or ultrashallow implants typically employ low energies (eg, 1 keV), but require relatively high beam currents. It is generally understood that a high current, low energy ion beam is obtained by extracting the ion beam from the ion source at a relatively high energy. The io...

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Abstract

The invention relates to a method and a device for reducing energy impurities, which can be used for beamline combination of particle injection. The protrusions, including the surface regions and the grooves therebetween, may face neutral atomic trajectories within the line of sight from the workpiece within the beamline combination. The protrusions can reroute the neutral atom trajectories away from the workpiece or cause other trajectories for further impact before hitting the workpiece and thereby further reducing energetic impurities for more sensitive implants.

Description

technical field [0001] The present invention relates generally to ion implantation systems, and more particularly to a system and method for reducing energetic impurities caused by scattering particles. Background technique [0002] Ion implantation is the physical process employed in the manufacture of semiconductor instruments to selectively implant dopants into semiconductor workpiece and / or wafer material. Therefore, the implantation behavior does not depend on the chemical interaction between the dopant and the semiconductor material. For ion implantation, dopant atoms / molecules are ionized and isolated, accelerated or decelerated, beamed and swept across the workpiece or wafer. The dopant ions physically bombard the workpiece, enter the surface and typically stop moving in the crystalline lattice structure beneath the surface of the workpiece. [0003] In ion implantation, energetic impurities (EC) are a fraction of the total amount of poor energy delivered to the wa...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/317H01J37/05H01J37/16
CPCH01J37/05H01J37/16H01J37/3171H01J2237/0213H01J2237/022H01J2237/31705G01K5/00H01J37/147
Inventor 爱德华·艾伊斯勒伯·范德伯格
Owner AXCELIS TECHNOLOGIES