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Reading voltage setting method, control circuit and memory storage device

A technology for reading voltage and setting method, which is applied in read-only memory, static memory, information storage, etc., and can solve the problems of shifting critical voltage distribution of flash memory elements and failure to correctly identify the storage state of flash memory element 1, etc.

Active Publication Date: 2018-12-14
PHISON ELECTRONICS
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  • Abstract
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AI Technical Summary

Problems solved by technology

[0005] However, during the production process, the threshold voltage distribution of the flash memory device may be shifted due to process variation, so that the storage state of the flash memory device 1 may not be correctly identified

Method used

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  • Reading voltage setting method, control circuit and memory storage device
  • Reading voltage setting method, control circuit and memory storage device
  • Reading voltage setting method, control circuit and memory storage device

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Embodiment Construction

[0113] Generally speaking, a memory storage device (also called a memory storage system) includes a rewritable non-volatile memory module and a controller (also called a control circuit). Typically memory storage devices are used with a host system so that the host system can write data to or read data from the memory storage device.

[0114] figure 2 A host system and a memory storage device are shown according to an exemplary embodiment.

[0115] Please refer to figure 2 , the host system 1000 generally includes a computer 1100 and an input / output (I / O) device 1106 . The computer 1100 includes a microprocessor 1102 , a random access memory (random access memory, RAM) 1104 , a system bus 1108 and a data transmission interface 1110 . The input / output device 1106 includes such as image 3 mouse 1202, keyboard 1204, monitor 1206 and printer 1208. It is important to understand that image 3 The devices shown are not limited to the input / output device 1106, which may also ...

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Abstract

The invention provides a read voltage setting method, a control circuit and a memory storage device. The read voltage setting method comprises the following steps of reading detection data stored in a memory cell of a word line to acquire corresponding critical voltage distribution, determining preset read voltage corresponding to the word line according to the critical voltage, applying multiple detection read voltage obtained according to the preset read voltage to the word line to read multiple detection page data, and determining optimized read voltage corresponding to the word line according to the minimum error bit number of the error bit numbers of the multiple detection page data. The read voltage setting method also comprises calculating difference of the optimized read voltage and the preset read voltage, wherein the difference is used as a read voltage adjustment value of the word line, and recording the read voltage adjustment value corresponding to the bit line in a re-reading table.

Description

technical field [0001] The invention relates to a reading voltage setting method, a control circuit and a memory storage device. Background technique [0002] Digital cameras, mobile phones, and MP3 players have grown rapidly in recent years, making consumers' demand for storage media also increase rapidly. Since rewritable non-volatile memory (rewritable non-volatile memory) has the characteristics of data non-volatility, power saving, small size, no mechanical structure, fast read and write speed, etc., it is most suitable for portable electronic products, such as laptop. A solid state drive is a storage device that uses flash memory as a storage medium. Therefore, the flash memory industry has become a very popular part of the electronics industry in recent years. [0003] figure 1 is a schematic diagram of a flash memory device according to the prior art. [0004] Please refer to figure 1 , the flash memory element 1 includes a charge trapping layer (charge trappin...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/26
Inventor 林纬许祐诚林小东吴宗霖郑国义
Owner PHISON ELECTRONICS
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