Test device and test method for thermoelectric potential rate of semiconductor thermoelectric material

A technology of thermoelectric potential rate and thermoelectric materials, applied in the direction of measuring devices, measuring electrical variables, instruments, etc., can solve the problems of cumbersome testing process, low testing accuracy, high manufacturing cost, etc., and achieve improved testing efficiency, simple acquisition process, The effect of easy operation

Active Publication Date: 2017-10-31
HARBIN NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The present invention aims to solve the problems of cumbersome test process, low test accuracy, low test efficiency, complex test system and high manufacturing cost of the existing thermoelectric materials for semiconductor thermoelectric materials. testing method

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  • Test device and test method for thermoelectric potential rate of semiconductor thermoelectric material

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Experimental program
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specific Embodiment approach 1

[0024] Specific implementation mode 1, refer to figure 1 Specifically illustrate the present embodiment, the test device of thermoelectric material thermoelectric potential rate of the semiconductor thermoelectric material described in the present embodiment, it comprises sample clamping device, digital voltmeter 4, digital display constant current source 6, DC stabilized voltage power supply U, galvanometer 5. Variable resistor R1, standard resistor R0, resistor R2, single pole single throw switch K1, single pole single throw switch K7, touch switch K4, touch switch K5, double pole single throw switch K6, double pole double throw selection Switch K2, DPDT steering switch K3;

[0025] The sample holding device includes an upper electrode 2, a lower electrode 7, a thermocouple 3 and a heater 1; the heater 1 is located above the upper electrode 2, and the thermocouple 3 is respectively embedded in the upper surface of the upper electrode 2 and the lower electrode 7. surface; be...

specific Embodiment approach 2

[0034] Embodiment 2. This embodiment is a further description of the device for testing the thermoelectric potential of semiconductor thermoelectric materials described in Embodiment 1. In this embodiment, the electrode 2 is a copper electrode.

specific Embodiment approach 3

[0035] Embodiment 3. This embodiment is a further description of the device for testing thermoelectric potential of semiconductor thermoelectric materials described in Embodiment 1. In this embodiment, the heater 1 is a semiconductor thermoelectric device.

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Abstract

The invention relates to a test device and a test method for thermoelectric potential rate of semiconductor thermoelectric materials, belonging to the field of thermoelectric performance testing of semiconductor thermoelectric materials. The invention aims to solve the problems of cumbersome testing process, low testing accuracy, low testing efficiency and complicated testing system of the existing thermoelectric materials of semiconductors. The invention realizes the measurement of the thermoelectric potential rate of the semiconductor thermoelectric material through the operation of the test device for the thermoelectric potential rate of the semiconductor thermoelectric material. The invention is used for measuring thermoelectric potential rate.

Description

technical field [0001] The invention belongs to the field of thermoelectric performance testing of semiconductor thermoelectric materials. Background technique [0002] Thermoelectric potential is one of the important thermoelectric parameters of semiconductor thermoelectric materials. Due to the simple principle of measuring the thermoelectric potential rate of semiconductor thermoelectric materials, the current measurement methods and testing devices are relatively mature. However, the measurement of thermoelectromotive force rate still needs to be improved in terms of test efficiency, equipment simplification and measurement accuracy. [0003] The traditional test method has technical difficulties in the precise control of the temperature difference. It needs to be completed by circulating water at the cold end with a heating source at the high temperature end. On the one hand, rapid testing will cause large temperature drift, thus increasing the difficulty of temperatur...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): G01R29/00
Inventor胡建民李理王月媛李将录曲秀荣
OwnerHARBIN NORMAL UNIVERSITY