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Substrate treating apparatus and method

A technology for a substrate processing device and a substrate processing method, which is applied in the directions of drying gas arrangement, semiconductor/solid-state device testing/measurement, lighting and heating equipment, etc., and can solve problems such as affecting the process.

Inactive Publication Date: 2015-06-03
SEMES CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This kind of carbon dioxide and organic solvent residues pollute the external environment of the process room, and affect the subsequent process through the action of particles

Method used

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  • Substrate treating apparatus and method
  • Substrate treating apparatus and method
  • Substrate treating apparatus and method

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Embodiment Construction

[0046] The terms and drawings used in this specification are for ease of description, and the present invention is not limited to the terms and drawings.

[0047] Among the techniques used in the present invention, if there is common knowledge not closely related to the idea of ​​the present invention, detailed description thereof will be omitted.

[0048] The substrate processing apparatus 100 of the present invention will be described below.

[0049] The substrate processing apparatus 100 performs a supercritical process for processing a substrate (S) using a supercritical fluid as a process fluid.

[0050] Among them, the substrate (S) includes all substrates used in the manufacture of semiconductor devices, flat panel displays (FPD: flat panel display) and other objects with circuit patterns formed on films, and is an overall concept. Such substrates (S) include, for example, various wafers including silicon wafers, glass substrates, organic substrates, and the like.

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Abstract

Provided is a substrate treating apparatus. The substrate treating apparatus includes a process chamber in which a predetermined process is performed on a substrate, a pressure meter measuring a pressure within the process chamber, and a controller receiving the measured pressure value from the pressure meter to determine an opening time of the process chamber. The controller opens the process chamber when a set condition elapses from a time at which the pressure within the process chamber reaches a preset opening pressure.

Description

technical field [0001] The present invention relates to a substrate processing device and a substrate processing method using the same. Background technique [0002] A semiconductor device is manufactured by forming a circuit pattern on a substrate through various processes including photolithography. Recently, a supercritical drying process (supercritical drying process) in which a substrate is dried using a supercritical fluid is used for a semiconductor device having a line width of 30 nm or less. Supercritical fluid is a fluid that has both gas and liquid properties above the critical temperature and critical pressure. It can be used very effectively in substrate drying due to its excellent diffusion and penetration capabilities, high solvency, and almost no surface tension. . [0003] However, the process chamber for performing such a supercritical process needs to be able to maintain a high-pressure supercritical state. In this way, after the process in the high-pre...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/302H01L21/67H01L21/66
CPCH01J37/32816H01J37/32825H01J37/32834H01J37/32935H01J37/3299H01L21/67028H01L21/67034H01L21/67051F26B21/10
Inventor 郑仁一金禹永李映一金鹏
Owner SEMES CO LTD