Manufacturing method of light emitting diode

A technology of light-emitting diodes and manufacturing methods, which is applied to electrical components, circuits, semiconductor devices, etc., and can solve problems such as easy oxidation and easy falling off of the reflective layer

Active Publication Date: 2015-06-03
EPILIGHT TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a method for manufacturing a light-emitting diode, whi

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  • Manufacturing method of light emitting diode
  • Manufacturing method of light emitting diode
  • Manufacturing method of light emitting diode

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Embodiment Construction

[0046] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0047] see Figure 1 to Figure 10 . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed ar...

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Abstract

The invention provides a manufacturing method of a light emitting diode. The manufacturing method comprises the steps: (1) manufacturing a light emitting epitaxial structure on the surface of a sapphire substrate; (2) forming a front scribe lane in the sapphire substrate; (3) completing a chip preparation technology; (4) grinding and thinning; (5) forming a V-shaped groove in the back surface of the sapphire substrate, according to the front scribe lane; (6) cleaning; (7) manufacturing reflecting layer structures on the back surface of the sapphire substrate and the surface of the V-shaped groove; (8) splitting the light emitting epitaxial structure. According to the manufacturing method, SiO2 layers and Ti3O5 layers which are alternately stacked have good reflecting effects; ultrathin middle Ni layers are adopted, so that the reflectivity is not reduced, the bonding performance of Ag reflecting layers and medium laminations is greatly improved, and the Ag reflecting layers are prevented from falling off; the Ni layer and the Ag layers which are alternately stacked are settled in the V-shaped groove, certain extension can be generated during splitting, so as to cover the side walls of the Ag reflecting layers, the side walls of the Ag reflecting layers can be preferably prevented from being oxidized, and the stability and reflectivity of the reflecting layer structures are guaranteed.

Description

technical field [0001] The invention relates to the field of semiconductor lighting, in particular to a method for manufacturing a light emitting diode. Background technique [0002] With the rapid development of science and technology, people have more and more choices for lighting devices in life. From traditional tungsten filament bulbs to fluorescent lamps, lighting devices are constantly being introduced. In recent years, light-emitting diodes (Light Emitting Diode, LED) have developed rapidly. Due to their advantages such as small size, high efficiency, long life, and stable photoelectric characteristics, light-emitting diodes are gradually widely used in household appliances, computer screens, mobile phones, and lighting equipment. , medical equipment or traffic signals and other fields. [0003] The luminous efficiency of LED is limited by the external quantum efficiency, and the external quantum efficiency is determined by the internal quantum efficiency and light ...

Claims

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Application Information

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IPC IPC(8): H01L33/00
Inventor 朱广敏郝茂盛杨杰袁根如齐胜利
Owner EPILIGHT TECH
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