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Semiconductor device
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Al technical title is built by PatSnap Al team. It summarizes the technical point description of the patent document.
A semiconductor and conductive technology, applied in the direction of semiconductor devices, electrical solid devices, electrical components, etc.
Active Publication Date: 2019-05-03
KK TOSHIBA
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[0007] However, semiconductor devices have been required to further improve the withstand voltage technology while suppressing the increase in on-resistance.
Method used
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no. 1 approach
[0026] figure 1 It is a perspective cross-sectional view showing a part of the semiconductor device of the first embodiment.
[0027] In this embodiment, a case where the first conductivity type is n-type and the second conductivity type is p-type will be described. However, the first conductivity type may be the p-type, and the second conductivity type may be the n-type.
[0028] The semiconductor device 100 is, for example, a MOSFET.
[0029] The semiconductor device 100 includes a first semiconductor region of the first conductivity type, a plurality of second semiconductor regions of the first conductivity type, a plurality of third semiconductor regions of the second conductivity type, a fourth semiconductor region of the second conductivity type, a first a conductive fifth semiconductor region, and a gate electrode.
[0030] The first semiconductor region is, for example, the n-type semiconductor region 2 . The second semiconductor region is, for example, the n-pilla...
no. 2 approach
[0087] use image 3 A second embodiment of the present invention will be described.
[0088] image 3 It is a perspective cross-sectional view showing a part of the semiconductor device 200 of the second embodiment.
[0089] In the description of each of the following embodiments, the description of parts having the same configuration or function as those of the first embodiment will be omitted, and the parts different from those of the first embodiment will be mainly described.
[0090] In the first embodiment, the size of the n-pillar region 3 in the Z direction and the dimension of the p-pillar region 4 in the Z direction are changed in the X direction to change the impurity amount in each region in the X direction.
[0091]In contrast, in the present embodiment, the impurity amount of each region is changed in the X direction by changing the impurity concentration of the n pillar region 3 and the impurity concentration of the p pillar region 4 in the X direction.
[009...
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Abstract
In general, according to one embodiment, a semiconductor device includes, a first semiconductor region, a plurality of second semiconductor regions, a plurality of third semiconductor regions, a plurality of fourth semiconductor regions, a fifth semiconductor region, and a gate electrode. An impurity concentration of the first conductivity type in the second semiconductor region is higher than an impurity concentration of the first conductivity type in the first semiconductor region. The third semiconductor region includes a first portion and a second portion. The first portion is provided between the second semiconductor regions adjacent to each other. An amount of impurity of the second conductivity type in the first portion is greater than an amount of impurity of the first conductivity type in the second semiconductor region contiguous to the first portion. The second portion is arranged with a part of the first semiconductor region. An amount of impurity of the second conductivity type in the second portion is smaller than an amount of impurity of the first conductivity type in the part of the first semiconductor region.
Description
[0001] [Related application] [0002] This application enjoys the priority of the basic application based on Japanese Patent Application No. 2014-156048 (filing date: July 31, 2014). This application includes the entire content of the basic application by referring to this basic application. technical field [0003] The following embodiments generally relate to a semiconductor device. Background technique [0004] Semiconductor devices such as MOSFET (Metal Oxide Semiconductor Field Effect Transistor, Metal Oxide Semiconductor Field Effect Transistor) and IGBT (Insulated Gate Bipolar Transistor, Insulated Gate Bipolar Transistor) are widely used in home appliances, communication equipment, automotive motors, etc. Used power conversion equipment or power control equipment, etc. In many cases, these semiconductor devices are required to have high-speed switching characteristics or reverse blocking characteristics (withstand voltage) of tens to hundreds of volts. [0005] Th...
Claims
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Application Information
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