Control method of thin-layer epitaxial transition region on heavily doped phosphorous substrate

A transition zone and substrate technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of limited transition zone steepness, increased TCS flow, TCS waste, etc., to improve BVDS discreteness, increase Edge resistivity value, the effect of reducing the effect of self-doping

Active Publication Date: 2018-01-09
HEBEI POSHING ELECTRONICS TECH
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  • Application Information

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Problems solved by technology

The conventional way to increase the rate is to increase the flow rate of TCS to generate a large amount of Si deposition to obtain a relatively high growth rate. This method has three disadvantages. One is to cause a lot of waste of TCS, and the other is to easily produce crystal defects. The yield rate is reduced, and the third is that the steepness of the transition zone is limited

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  • Control method of thin-layer epitaxial transition region on heavily doped phosphorous substrate
  • Control method of thin-layer epitaxial transition region on heavily doped phosphorous substrate
  • Control method of thin-layer epitaxial transition region on heavily doped phosphorous substrate

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Embodiment 1

[0029] The invention discloses a control method of a thin-layer epitaxial transition region of a heavily doped phosphorus substrate, which comprises the following steps:

[0030] 1) The temperature and TCS (trichlorosilane) flow rate of the monolithic epitaxial growth system are fixed when the substrate is epitaxially grown.

[0031] 2) During epitaxial growth of the substrate, the same doping process is used for the growth of the cover layer and the growth of the epitaxial layer.

[0032] 3) During the growth of the epitaxial layer, change the bypass discharge (exhaust) pressure in the monolithic epitaxial growth system, so that the bypass discharge pressure is greater than or less than the system cavity (cavity) pressure, and adjust the steepness of the transition zone of the epitaxial layer degree.

[0033] 4) By adjusting the bypass discharge pressure, changing the steepness of the transition region of the epitaxial layer, and analyzing the extended resistance profile of ...

Embodiment 2

[0035] The invention discloses a control method of a thin-layer epitaxial transition region of a heavily doped phosphorus substrate, which comprises the following steps:

[0036] Using ASM E2000 type monolithic epitaxial growth system, such as figure 1 As shown, the infrared lamp array is radiatively heated, the high-purity graphite base is a silicon wafer carrier, and the protective gas is ultra-high-purity H 2 , the purity reaches more than 99.999999%.

[0037] Using 8-inch heavily doped phosphorus substrate, crystal orientation , resistivity range of 0.001-0.0015ohm.cm, super hermetic back-sealing process;

[0038] Before epitaxial growth, the system is fully removed from the doping treatment. At 1190 ° C, a large flow of HCL gas is introduced at 20 slm / min, and when the residual Si and the residual Si on the base are etched away, the H 2 The flow rate is set to 10slm / min, and when corroding the residual Si on the inner wall of the bell jar, increase the H 2 The flow rat...

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Abstract

The invention discloses a regulation control method for a thin layer epitaxial transition region of a heavily doped PH substrate, and relates to the technical field of epitaxial layer growth methods. The method comprises the following steps: fixing the temperature and TCS flow of a uniwafer epitaxial growth system during epitaxial growth of a substrate; during the epitaxial growth of the substrate, using a same doping process for CAP layer growth and epitaxial layer growth; and during the epitaxial layer growth, changing a VENT pressure in the uniwafer epitaxial growth system to be greater than or less than a chamber pressure of the system, and adjusting the steepness of a transitional region of the epitaxial layer. According to the method, the epitaxial layer growth rate is influenced by adjusting the matching of a pressure between a VENT pipeline and a cavity without changing the TCS flow, so that the length of the transitional region from the substrate to the epitaxial layer is influenced and controlled, the transitional region is steeper, and the edge resistivity numerical value of the epitaxial layer can be remarkably increased.

Description

technical field [0001] The invention relates to the technical field of growth methods of epitaxial layers, in particular to a method for regulating and controlling epitaxial transition regions of heavily doped phosphorus substrate thin layers. Background technique [0002] For the development of new epitaxial materials for low-voltage MOS devices on heavily doped phosphorus substrates, the test results of resistivity (four-probe, 4PP test) are greatly affected by the transition region of the epitaxial layer. Delay, the lower the 4PP test result; for the general epitaxial process, the epitaxial resistivity can be adjusted by adjusting the dopant dose, the epitaxial thickness can be adjusted by the growth rate and growth time, and there is no general method for the epitaxial transition region. Adjustment. With the development of integrated circuits, the market demand for epitaxial materials for large-size low-voltage MOS devices is increasing. At present, the demand for epita...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/20H01L21/02
CPCH01L21/02436H01L21/02518H01L21/02656
Inventor 张志勤
Owner HEBEI POSHING ELECTRONICS TECH
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