Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of quantum dot white light LED device and preparation method thereof

A technology of LED devices and quantum dots, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as poor reliability and poor heat dissipation, and achieve the effects of small light-emitting surface, good chemical stability, and no need for packaging

Active Publication Date: 2018-11-23
APT ELECTRONICS
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, encapsulating quantum dots in tubes or making quantum dot films have problems such as poor heat dissipation and poor reliability.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of quantum dot white light LED device and preparation method thereof
  • A kind of quantum dot white light LED device and preparation method thereof
  • A kind of quantum dot white light LED device and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] This embodiment discloses a quantum dot white light LED device 1, such as figure 1 , 2As shown, it includes a flip chip 11 , a quantum dot layer 12 with good light conversion effect, a transparent encapsulation layer 13 , a reflective layer 14 and an electrode layer 15 .

[0044] The upper surface of the flip chip 11 is provided with a groove 111, and the inner surface of the groove 111 is provided with a first texture 1111 (the first texture 1111 on the side wall is not shown in each figure), and the quantum dot layer 12 is located in the groove. 111 inside. Wherein, the structural design of the groove 111 makes the quantum dot layer 12 easier to set up, and is not easy to move, that is, the groove 111 plays a role of limiting the quantum dot layer 12, so that the quantum dot layer 12 can be made very thin, In turn, LED products have high color rendering, and the light color is more pure; the design of the first texture 1111 is to increase the contact area between th...

Embodiment 2

[0065] This embodiment discloses another quantum dot white light LED device 2, such as Figure 4 , 5 As shown, structurally, its difference with the quantum dot white light LED device 1 described in Embodiment 1 is:

[0066] In this embodiment, more specifically, the sidewall of the groove 111 is stepped; the quantum dot layer 12 is arranged in the most central groove 1112, and the transparent encapsulation layer 13 covers the exposed area of ​​the quantum dot layer 12, The upper surface of the flip chip 11 and the upper surface of the reflective layer 14 .

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a quantum dot white light LED device. The quantum dot white light LED device comprises a flip chip, a quantum dot layer, a transparent packaging layer, a reflective layer and an electrode layer, wherein a groove is formed in the upper surface of the flip chip; first lines are arranged on the inner surface of the groove; the quantum dot layer is arranged in the groove; the electrode layer is arranged at the bottom of the flip chip; the reflective layer coats the side wall of the flip chip, a non-groove region on the upper surface of the flip chip, and the side wall of the electrode layer; the spaces between electrodes of the electrode layer is filled with the reflective layer; second lines are arranged on the upper surface and the inner wall of the reflective layer; and the exposed region of the quantum dot layer and the upper surface of the reflective layer are coated with the transparent packaging layer. The invention also correspondingly discloses a preparation method for the quantum dot white light LED device. The quantum dot white light LED device is high in airtight property, excellent in heat dissipation, high in reliability, and high in color rendering; and the preparation method is free of a packaging link, simple in preparation process and easy to implement, mature, and high in preparation efficiency.

Description

technical field [0001] The invention belongs to the technical field of light emitting diodes (LEDs), and in particular relates to a quantum dot white light LED device and a preparation method thereof. Background technique [0002] LED (Light Emitting Diode, light-emitting diode), is a semiconductor optoelectronic device that converts electrical energy into light energy, and is a type of optoelectronic semiconductor. The core part of the light-emitting diode is a chip composed of a P-type semiconductor and an N-type semiconductor. There is a transition layer between the P-type semiconductor and the N-type semiconductor, which is called a P-N junction. In the PN junction of some semiconductor materials, when the injected minority carriers recombine with the majority carriers, the excess energy will be released in the form of light, thereby directly converting electrical energy into light energy. When a reverse voltage is applied to the PN junction, it is difficult for minorit...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/20H01L33/46H01L33/50H01L33/54H01L33/00
CPCH01L33/005H01L33/20H01L33/46H01L33/502H01L33/54H01L2933/0025H01L2933/0041H01L2933/005
Inventor 曾照明万垂铭李真真姜志荣区伟能姚述光侯宇肖国伟
Owner APT ELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com