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P-type PERC double-side solar cell, preparation method therefor, module, and system

A solar cell, double-sided technology, applied in the field of solar cells, to achieve the effect of reducing production costs and saving consumption

Active Publication Date: 2017-08-11
GUANGDONG AIKO SOLAR ENERGY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, at present, P-type PERC double-sided solar cells are only the research done by some research institutions in the laboratory. How to optimize the structure of P-type PERC double-sided solar cells to adapt to mass production remains to be further discussed and discussed by those skilled in the art. Research

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  • P-type PERC double-side solar cell, preparation method therefor, module, and system
  • P-type PERC double-side solar cell, preparation method therefor, module, and system
  • P-type PERC double-side solar cell, preparation method therefor, module, and system

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Embodiment Construction

[0048] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0049] Existing single-sided solar cells are equipped with an all-aluminum back electric field on the back of the cell to cover the entire back of the silicon wafer. The effect of the all-aluminum back electric field is to increase the open circuit voltage Voc and short circuit current Jsc, forcing the minority carriers away from the surface. The minority carrier recombination rate is reduced, thereby improving cell efficiency overall. However, since the electric field of the all-aluminum back is opaque to light, the back of the solar cell with the all-aluminum back electric field cannot absorb light energy, only the front can absorb light energy, and the comprehensive photoelectric conversion efficiency of the cell is difficult to be greatly improved.

[0050] In...

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Abstract

The invention discloses a P-type PERC double-side solar cell, and the cell comprises a back silver main grid, aluminum grid lines, a grid line chine, a back surface silicon nitride film, a back surface aluminum oxide film, P-type silicon, an N-type emitter electrode, a front silicon nitride film, and a front silver electrode. The back surface silicon nitride film, the back surface aluminum oxide film, the P-type silicon, the N-type emitter electrode, the front silicon nitride film and the front silver electrode are sequentially connected in an overlapped manner from the bottom to the top. The back surface silicon nitride film and the back surface aluminum oxide film form 30-500 parallel laser slotted regions through laser slotting, and the interior of each laser slotted region is provided with at least one group of laser slotted units. The aluminum grid lines are connected with the P-type silicon through the laser slotted regions. The aluminum grid lines are vertically connected with the back silver main grid, and the grid line chine is connected with the aluminum grid lines. The invention also discloses a preparation method for the cell, a module, and a system. According to the invention, the cell can absorb sunlight from two sides, enlarges the application range, and improves the photoelectric conversion efficiency.

Description

technical field [0001] The present invention relates to the field of solar cells, in particular to a P-type PERC double-sided solar cell; the present invention also relates to a preparation method, component and system of a P-type PERC double-sided solar cell. Background technique [0002] Crystalline silicon solar cell is a device that effectively absorbs solar radiation energy and converts light energy into electrical energy by using the photovoltaic effect. Under the action, holes flow from the N region to the P region, electrons flow from the P region to the N region, and a current is formed after the circuit is turned on. [0003] Traditional crystalline silicon solar cells basically only use front passivation technology, depositing a layer of silicon nitride film on the front surface of the silicon wafer by PECVD to reduce the recombination rate of minority carriers on the front surface, which can greatly increase the open circuit voltage and Short-circuit current, th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/068H01L31/18
CPCH01L31/022441H01L31/0684H01L31/1804Y02E10/547Y02P70/50
Inventor 方结彬何达能陈刚
Owner GUANGDONG AIKO SOLAR ENERGY TECH CO LTD