Efficient impurity removing and crushing process of semi-molten bottom seed crystal

A seed crystal, high-efficiency technology, applied in inorganic chemistry, silicon compounds, chemical instruments and methods, etc., can solve the problems of low recovery efficiency, easy to pollute silicon materials, complicated process steps, etc. Effect

Active Publication Date: 2017-11-21
JA SOLAR
View PDF7 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The technical problem to be solved is to solve the problems of complicated process steps and lengthy processes in the current process and the low recovery efficiency that easily contaminates silicon materials, and propose a high-e

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] The present invention is described further below:

[0027] A high-efficiency impurity removal and crushing process for semi-molten bottom seed crystals is provided, which includes the following steps:

[0028] ① Pick up materials, sort them manually with isolation gloves, sort out glue, obvious metal wires, etc., and then use special non-polluting fixtures to take out the normal temperature semi-soluble bottom seed silicon materials that need to be processed and transfer them;

[0029] ②Initial impurity removal, using a grinding tool to remove the crucible impurity layer on the outer layer of the semi-soluble bottom seed silicon material. The crucible impurity layer is a quartz mixture impurity layer formed by the contact between the silicon material and the crucible during the pre-production process;

[0030] ③Heating pretreatment, use pure water to clean the surface of the semi-soluble bottom seed silicon material. After cleaning, use a special anti-pollution fixture ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to an efficient impurity removing and crushing process of a semi-molten bottom seed crystal and belongs to the field of production and preparation of silicon materials. The efficient impurity removing and crushing process comprises the following steps: 1, material taking 2, impurity removal for the first time; 3, temperature rise pretreatment; 4, cooling pretreatment; 5, silicon material crushing; 6, impurity removal and the like. The efficient impurity removing and crushing process provided by the invention has the beneficial effects that by adopting alternate cooling and heating and applying a negative temperature value to the production process, a good impurity removal effect is realized; the process steps are simplified, drying is not needed, the occurrence of water stains is further eliminated, and the risk of the water stains does not exist; the production efficiency is good, so that the recovery rate is greatly improved.

Description

technical field [0001] The invention belongs to the field of silicon wafer production, and in particular relates to a high-efficiency impurity removal and crushing process for semi-molten bottom seed crystals. Background technique [0002] In the preparation of high-efficiency polysilicon, the high-efficiency polysilicon technology with seed crystals is mostly used, that is, the so-called semi-melting high-efficiency, and the silicon ingot grown by semi-melting high-efficiency polysilicon technology has a large number of subcutaneous pores in the semi-melting bottom seed material, and the polysilicon ingot is in the process of processing. There will be oil in the pores of the semi-molten bottom seed crystal, which is difficult to clean thoroughly, so that the semi-molten bottom seed crystal cannot be used for direct recycling and throwing into the furnace. The purity of the silicon material must be improved through an efficient polysilicon purification process. In the prior ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C01B33/037
CPCC01B33/037
Inventor 李永峰刘存国张在存闫宁志白贵杰王朋及天傲
Owner JA SOLAR
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products