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Integrated circuits with nonvolatile memory (NVM) structures, and methods for fabricating integrated circuits with NVM structures

一种集成电路、控制栅极的技术，应用在集成电路及用于制造集成电路领域，能够解决电路系统复杂等问题

Inactive Publication Date: 2018-01-09
GLOBALFOUNDRIES SINGAPORE PTE LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Furthermore, the circuitry used to provide the necessary wordline, bitline, and gate voltages to achieve the necessary critical electron charge and resulting voltage is significantly more complex

Method used

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  • Integrated circuits with nonvolatile memory (NVM) structures, and methods for fabricating integrated circuits with NVM structures
  • Integrated circuits with nonvolatile memory (NVM) structures, and methods for fabricating integrated circuits with NVM structures
  • Integrated circuits with nonvolatile memory (NVM) structures, and methods for fabricating integrated circuits with NVM structures

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Embodiment Construction

[0035] The following embodiments are merely illustrative in nature, and are not intended to limit integrated circuits, NVM structures, or integrated circuit manufacturing methods as claimed herein. Furthermore, the intention is not to be limited to the previously mentioned technical field, background technology or invention content, or any representation or metaphor theory introduced in the following embodiments.

[0036] According to various specific embodiments herein, what is provided is an integrated circuit including a dual-bit NVM structure formed in and around a fin-shaped structure, and a manufacturing method of the fin-based dual-bit NVM structure. In general, the following specific embodiments are about using three parallel fins to form a dual-position NVM structure. Adjacent two-bit NVM structures can share fins, so that two two-bit NVM structures can be formed using five parallel fins. The method described in this article is compatible with fin-based field effect tra...

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Abstract

Integrated circuits, nonvolatile memory (NVM) structures, and methods for fabricating integrated circuits with NVM structures are provided. An exemplary integrated circuit includes a substrate and a dual-bit NVM structure overlying the substrate. The dual-bit NVM structure includes primary, first adjacent and second adjacent fin structures laterally extending in parallel over the substrate. The primary fin structure includes source, channel and drain regions. Each adjacent fin structure includes a program / erase gate. The dual-bit NVM structure further includes a first floating gate located between the channel region of the primary fin structure and the first adjacent fin structure and a second floating gate located between the channel region of the primary fin structure and the second adjacent fin structure. Also, the dual-bit NVM structure includes a control gate adjacent the primary fin structure.

Description

Technical field [0001] The present invention generally relates to integrated circuits and methods for manufacturing integrated circuits, and more particularly, to integrated circuits having fin-based nonvolatile memory (NVM) structures such as dual-bit NVM structures. Background technique [0002] As is well known to those with ordinary knowledge in the art, the manufacturing and production goals of memory devices have always been to increase storage space in the smallest area or the smallest amount of silicon. Flash memory is programmable, erasable and non-volatile. The basic flash memory cell is a planar NMOS transistor modified with a "floating" gate. Existing flash memory cells are programmed by applying a high voltage to the control gate or word line, and applying a high voltage to the drain by bit line. These voltages excite electrons so that they pass through the thin oxide layer and are trapped on the floating gate. Therefore, the gate carries a negative charge. If th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11524
CPCH01L29/785H01L29/42328H01L29/66825H01L29/7887H01L29/0653H01L29/66795H01L29/7851
Inventor 蔡明苍林启荣郭克文
Owner GLOBALFOUNDRIES SINGAPORE PTE LTD