A transistor for increasing signal amplitude range
A signal amplitude and transistor technology, applied in the direction of transistors, diodes, semiconductor devices, etc., can solve the problems of limited signal amplitude and signal energy, and achieve the effect of increasing the range of signal amplitude
Active Publication Date: 2019-12-10
RICHWAVE TECH CORP
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- Application Information
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Problems solved by technology
Since the interface parasitic capacitance corresponding to the substrate has the smallest capacitance value and bears the largest cross-voltage, the parasitic diode corresponding to the substrate is easily turned on, resulting in a greatly limited amplitude of the signal
Since the amplitude of the signal is greatly limited, the amount of energy the signal can carry will also be severely limited
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[0060] Specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. However, the present invention should be understood as not limited to such embodiments described below, and the technical idea of the present invention can be implemented in combination with other known technologies or other technologies having the same functions as those known technologies.
[0061] Specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.
[0062] Please refer to figure 1 , figure 1 is a schematic diagram illustrating a transistor 100 for increasing the signal amplitude range according to the first embodiment of the present invention. Such as figure 1As shown, the transistor 100 includes a first doped well 102, a second doped well 104, a structural layer 106, a first doped region 108, a second doped region 110, a gate layer 112, a A first lightly doped ...
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The invention discloses a transistor used for expanding a signal amplitude scope. The transistor used for expanding the signal amplitude scope comprises a first doped well, a second doped well, a first doped zone, a second doped zone, a gate electrode layer and at least one compensation capacitor. The first doped well and the second doped well are formed in a structure layer, the first doped zoneand the second doped zone are formed in the first doped well which is of a first electric conduction type, the second doped well is of a second electric conduction type, and the first doped zone is used for transmitting a signal; the at least one compensation capacitor is used for adjusting cross voltage of an interface parasitic capacitor between the first doped zone and the first coped well, between the first doped well and the second doped well, or between the second doped well and the structure layer.
Description
technical field [0001] The invention relates to a transistor, in particular to a transistor which uses a compensation capacitance to increase the range of signal amplitude. Background technique [0002] When a transistor transmits or receives a signal, the amplitude of the signal will straddle all interface parasitic capacitances between the doped region of the drain (source) of the transistor and the substrate on which the transistor is formed, wherein all interface parasitic Among the capacitors, the capacitance value corresponding to the interface parasitic capacitance of the substrate is the smallest and the cross-voltage withstood will be greater than the cross-voltage borne by the other parasitic capacitances of all the interface parasitic capacitances. Since the parasitic capacitance of the interface corresponding to the substrate has the smallest capacitance and bears the largest cross-voltage, the parasitic diode corresponding to the substrate is easily turned on, w...
Claims
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IPC IPC(8): H01L25/16H01L27/06
CPCH01L25/16H01L27/0629
Inventor 陈智圣李宗翰陈长亿
Owner RICHWAVE TECH CORP