Plasma chamber and semiconductor processing equipment

Abstract

The present invention provides a plasma chamber which comprises a chamber, a protection cylinder, a base, a snap ring and a shell. The shell is arranged in the chamber; when reactive processing is performed in the plasma chamber, the inner surface of the shell and the inner surface of the protective cylinder enclose a first space; the base and the snap ring are located in the first space; the baseis capable of applying a radio-frequency power; a second space is formed among the inner surface of the chamber, the outer surface of the shell and the outer surface of the protective cylinder; and the shell is grounded and used to shield the second space from the radio-frequency power applied from the base and the snap ring. The present invention also provides semiconductor processing equipmentwhich can ensure that a large space under the base is not subjected to build-up of luminance, thereby a stable process result can be obtained.

Description

technical field [0001] The invention belongs to the technical field of semiconductor processing equipment, and in particular relates to a plasma chamber and semiconductor processing equipment. Background technique [0002] Plasma equipment is widely used in today's semiconductor, solar cell, flat panel display and other manufacturing processes. The types of plasma equipment currently include: DC discharge plasma type, capacitively coupled plasma (CCP) type, inductively coupled plasma (ICP) type, and electron cyclotron resonance plasma (ECR) type. At present, plasma is widely used in physical vapor deposition (PVD), plasma etching and plasma chemical vapor deposition (PECVD). [0003] The main principle of PVD is: apply a negative voltage on the cathode (i.e. the target), and when the vacuum chamber reaches the appropriate environment (or condition) to perform glow discharge to generate plasma, the positively charged gas atoms in the plasma ( Ions) are attracted by the nega...

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