Plasma Chambers and Semiconductor Processing Equipment

Abstract

The invention provides a plasma chamber, which includes a chamber body, a protective cylinder, a base, a clasp and a casing, and a casing is also arranged in the chamber; when the plasma chamber is subjected to reaction processing, the inner surface of the casing and the The inner surface of the protective tube encloses a first space, the base and the snap ring are located in the first space; the base can apply radio frequency power; the inner surface of the cavity, the shell A second space is formed between the outer surface of the body and the outer surface of the protective tube; the casing is grounded to shield the second space from the radio frequency power applied from the base and the clasp. The invention also provides semiconductor processing equipment, which can ensure that the large space below the base will not be glowed, so that stable process results can be obtained.

Description

technical field [0001] The invention belongs to the technical field of semiconductor processing equipment, and in particular relates to a plasma chamber and semiconductor processing equipment. Background technique [0002] Plasma equipment is widely used in today's semiconductor, solar cell, flat panel display and other manufacturing processes. The types of plasma equipment currently include: DC discharge plasma type, capacitively coupled plasma (CCP) type, inductively coupled plasma (ICP) type, and electron cyclotron resonance plasma (ECR) type. At present, plasma is widely used in physical vapor deposition (PVD), plasma etching and plasma chemical vapor deposition (PECVD). [0003] The main principle of PVD is: apply a negative voltage on the cathode (i.e. the target), and when the vacuum chamber reaches the appropriate environment (or condition) to perform glow discharge to generate plasma, the positively charged gas atoms in the plasma ( Ions) are attracted by the nega...

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