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Reference voltage generation circuit

A reference voltage generation and reference voltage technology, applied in the direction of adjusting electrical variables, instruments, diodes, etc., can solve problems such as low second-order temperature dependence

Active Publication Date: 2020-11-03
NEW JAPAN RADIO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] However, in practice, the base-emitter voltage Vbe of a bipolar transistor has a small second-order temperature coefficient, so as Figure 5 As shown, the temperature characteristic of the reference voltage VBG has a second-order temperature dependence that is lower in the high temperature region B and the lower temperature region C than in the normal temperature region A
Therefore, in applications requiring stability over a wide temperature range, such as automotive applications, this slight temperature dependence sometimes becomes a problem.

Method used

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Examples

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no. 1 example ＞

[0042] exist image 3 The reference voltage generating circuit of the first embodiment of the present invention is shown. The main body 10 of the reference voltage generating circuit is composed of three resistors R21, R22, R23. Figure 4 Resistor R2 of the configuration of the reference voltage generation circuit 50 described in . That is to say, these resistance values ​​have a relationship of R21+R22+R23=R2.

[0043] The bias circuit 20 comprises: pnp transistors Q6, Q7 whose bases are commonly connected to transistors Q3, Q4, series connected resistors R5, R6, R7 connected between the collector of transistor Q6 and ground GND, connected to resistors R5 and A diode-connected npn transistor Q8 between the common connection point of R6 and ground GND and a diode-connected npn transistor Q9 connected to the collector of transistor Q7.

[0044] The high temperature correction circuit 30 includes: a pnp transistor Q10 whose base is connected to transistors Q3 and Q4 in common,...

no. 2 example ＞

[0066] exist image 3In the reference voltage generating circuit of , the temperature correction is performed for the high-temperature region B and the low-temperature region C, but depending on the application, it may be sufficient to perform temperature correction only for the high-temperature region B. In this way, when only temperature correction in the high temperature region B is performed, the low temperature correction circuit 40 is not used. In addition, the bias voltage V1 supplied to the low temperature correction circuit 40 is unnecessary. In this case, in the reference voltage generating circuit main body 10, the resistors R22 and R23 can be replaced with one resistor (resistance value=R22+R23).

no. 3 example ＞

[0068] exist image 3 In the reference voltage generating circuit of , the temperature correction is performed for the high-temperature region B and the low-temperature region C, but depending on the application, it may be sufficient to perform temperature correction only for the low-temperature region C. In this way, when performing temperature correction only in the low-temperature region C, the high-temperature correction circuit 30 is not used. In addition, the bias voltage V3 supplied to the high temperature correction circuit 30 is not required, nor is the transistor Q8 of the bias circuit 20 required. In this case, in the reference voltage generation circuit main body 10, the resistors R21 and R22 can be replaced by one resistor (resistance value=R21+R22), and in the bias circuit 20, the resistors R6 and R7 can be replaced by one resistor (resistor value = R6 + R7).

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Abstract

The reference voltage generation circuit of the present invention includes: a bandgap type reference voltage generation circuit main body (10), which generates a substantially constant reference voltage at normal temperature; supply to the resistance to increase the reference voltage generated by the reference voltage generation circuit main body at high temperature; the low temperature correction circuit (40) supplies a low temperature correction current that increases as the temperature is lower to the resistance, so that the low temperature correction current is increased at low temperature by The reference voltage generated by the main body of the reference voltage generation circuit rises; and the bias circuit (20) generates a bias voltage corresponding to temperature, controls a high temperature correction current, and controls a low temperature correction current.

Description

technical field [0001] The present invention relates to a bandgap type reference voltage generating circuit that generates a reference voltage stable against temperature changes. Background technique [0002] As a conventional reference voltage generating circuit, for example, Figure 4 A reference voltage generation circuit 50 as shown. This is called a bandgap type reference voltage generation circuit, and includes: npn transistors Q1, Q2 whose bases are commonly connected to output terminal 1, and pnp transistors Q1, Q2 connected to the collectors of these transistors Q1, Q2 as a current mirror connection as an active load Transistors Q3, Q4, pnp transistor Q5 with base connected to collector of transistor Q1, collector connected to base of transistors Q1, Q2 and output terminal 1 and emitter to supply terminal, and resistor R1 connected in series , R2. Resistor R1 is connected between the emitter of transistor Q1 and the emitter of transistor Q2, and resistor R2 is con...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G05F3/30
CPCG05F3/30G05F1/463G05F1/465G05F1/468H01L27/0635
Inventor 吉田晴彦
Owner NEW JAPAN RADIO CORP