Method for preparing cadmium telluride or cadmium zinc telluride polycrystal material

A technology of cadmium zinc telluride and cadmium telluride, applied in polycrystalline material growth, chemical instruments and methods, single crystal growth, etc., can solve the problems of material oxidation and scrapping, equipment damage economy, quartz crucible container explosion, etc.

Active Publication Date: 2020-10-23
中科宏芯(常州)传感科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In the preparation process of cadmium telluride or cadmium zinc telluride material, the successful synthesis of cadmium telluride or cadmium zinc telluride polycrystalline material by using tellurium simple substance, cadmium simple substance and zinc simple substance is a key technology, and violen...

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  • Method for preparing cadmium telluride or cadmium zinc telluride polycrystal material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Example 1: Prepare 100kg of CdTe crystal material.

[0032] Preparation process:

[0033] 1) The inner diameter of the lower part of the large quartz crucible 1 is 300 mm, the inner diameter of the upper part is 322 mm, the wall thickness is 5 mm, and the length is 1100 mm; the small crucible 2 is made of quartz material. The narrow tube 4 connected to the crucible 2 cavity, the outer diameter of the cylindrical tube is 320 mm, the length is 180 mm, the total length of the funnel and the thin tube 4 is 100 mm, the wall thickness is 3 mm, the inner diameter of the tail end of the thin tube 4 is 8 mm; the outer diameter of the quartz plug 3 is 320 mm , wall thickness 5mm, length 100mm. Clean and dry the large quartz crucible 1, small crucible 2 and quartz stopper 3.

[0034] 2) Put the large quartz crucible 1 and the small crucible 2 into the carbon coating furnace, and coat the inner surfaces of the large quartz crucible 1 and the small crucible 2 with a carbon film. ...

Embodiment 2

[0045] Embodiment 2: prepare 6kg Cd 0.96 Zn 0.04 Te crystal material.

[0046] Preparation process:

[0047] 1) The inner diameter of the lower part of the large quartz crucible 1 is 90 mm, the inner diameter of the upper part is 112 mm, the wall thickness is 3 mm, and the length is 1000 mm; the small crucible 2 is made of quartz material. The thin tube 4 connected to the crucible 2 cavity has an outer diameter of 110 mm and a length of 150 mm. Wall thickness 3mm, length 100mm. Clean and dry the large quartz crucible 1, small crucible 2 and quartz stopper 3.

[0048]2) Put the large quartz crucible 1 and the small crucible 2 into the carbon coating furnace, and coat the inner surfaces of the large quartz crucible 1 and the small crucible 2 with a carbon film.

[0049] 3) The weights of elemental tellurium, elemental cadmium, and elemental zinc were weighed with an electronic balance to be 3215.0484 grams, 2719.0481 grams, and 65.9035 grams, respectively.

[0050] 4) Put ...

Embodiment 3

[0059] Embodiment 3: prepare 6kg Cd 0.9 Zn 0.1 Te crystal material.

[0060] Preparation process:

[0061] 1) The inner diameter of the lower part of the large quartz crucible 1 is 90 mm, the inner diameter of the upper part is 112 mm, the wall thickness is 3 mm, and the length is 1000 mm; the small crucible 2 is made of quartz material, and the upper part of the small crucible 2 is cylindrical and the lower part is funnel-shaped. 2. Thin tube 4 connected to the cavity. The outer diameter of the cylindrical tube is 110mm and the length is 150mm. Thickness 3mm, length 100mm. Clean and dry the large quartz crucible 1, small crucible 2 and quartz stopper 3.

[0062] 2) Put the large quartz crucible 1 and the small crucible 2 into the carbon coating furnace, and coat the inner surfaces of the large quartz crucible 1 and the small crucible 2 with a carbon film.

[0063] 3) The weights of elemental tellurium, elemental cadmium, and elemental zinc were weighed with an electronic...

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Abstract

The invention relates to a preparation method of a cadmium telluride or cadmium zinc telluride polycrystal material. The preparation method is characterized by comprising the following preparation process flows of: 1) cleaning and drying a large quartz crucible, a small crucible capable of being loaded into the large quartz crucible and a quartz plug; wherein a hole is formed in the bottom of thesmall crucible; 2) putting the large quartz crucible into a carbon plating furnace, and plating a layer of carbon film on the inner surface of the large quartz crucible; and 3) weighing elemental tellurium and elemental cadmium according to the ratio of cadmium telluride to be synthesized, or weighing elemental tellurium, elemental cadmium and elemental zinc according to the ratio of cadmium zinctelluride to be synthesized. By the preparation method, tellurium and cadmium can slowly react, the instantaneous reaction amount is reduced, and the risk of leakage caused by quartz tube cracking isreduced.

Description

technical field [0001] The invention belongs to the field of preparation of crystal materials, in particular to a method for synthesizing cadmium telluride (CdTe) or cadmium zinc telluride (CdTe) 1- x Zn x Te) new method for polycrystalline material. Background technique [0002] Cadmium telluride or cadmium zinc telluride crystal is the preferred substrate material for the preparation of mercury cadmium telluride infrared focal plane detectors, and is an ideal semiconductor material for the preparation of nuclear radiation detectors. In addition, cadmium telluride or cadmium zinc telluride crystals are used in the preparation Thin-film solar cells, infrared windows, light modulators, etc. also have broad applications. [0003] In the preparation process of cadmium telluride or cadmium zinc telluride material, the successful synthesis of cadmium telluride or cadmium zinc telluride polycrystalline material by using tellurium simple substance, cadmium simple substance and z...

Claims

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Application Information

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IPC IPC(8): C30B29/48C30B28/04
CPCC30B28/04C30B29/48
Inventor 孙士文
Owner 中科宏芯(常州)传感科技有限公司
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