Method for preparing cadmium telluride or cadmium zinc telluride polycrystal material

A technology of cadmium zinc telluride and cadmium telluride, which is applied to the growth of polycrystalline materials, chemical instruments and methods, and single crystal growth, etc., can solve the problems of high cost, explosion of quartz crucible containers, and scrapping of materials due to oxidation.

Active Publication Date: 2020-10-23
中科宏芯(常州)传感科技有限公司
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0003] In the preparation process of cadmium telluride and cadmium zinc telluride materials, the successful synthesis of polycrystalline materials of cadmium telluride and cadmium zinc telluride by simple substance of tellurium, simple substance of cadmium and simple substance of zinc is the key technology. Usually, the method of vacuum sintering and sealing of quartz crucible is adop...

Method used

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  • Method for preparing cadmium telluride or cadmium zinc telluride polycrystal material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Example 1: Prepare 100kg of CdTe crystal material.

[0033] Preparation process:

[0034] 1) The first crucible 1, the second crucible 2, and the first cover 3 are made of quartz; the first crucible 1 has an annular groove 11 along the outer peripheral wall, the inner diameter of the lower part of the first crucible 1 is 300 mm, the inner diameter of the upper part is 322 mm, and the wall thickness 5mm, length 800mm; the width of annular groove 11 is 18mm, the wall thickness is 2.5mm, and the depth is 15mm; the upper part of the second crucible 2 is cylindrical, and the lower part is funnel-shaped. 4 The total length is 100 mm, the wall thickness is 3 mm, and the inner diameter of the tail end of the thin tube 4 is 8 mm; the top of the first cover 3 is closed, the bottom is open and the side wall can be inserted into the annular groove 11, the inner diameter of the first cover 3 is 336 mm, the wall thickness is 2.5 mm, The length is 30 mm; the first crucible 1, the sec...

Embodiment 2

[0045] Embodiment 2: prepare 6kg Cd 0.96 Zn 0.04 Te crystal material.

[0046] Preparation process:

[0047] 1) The first crucible 1, the second crucible 2, and the first cover 3 are made of quartz; the first crucible 1 has an annular groove 11 along the outer peripheral wall, the inner diameter of the lower part of the first crucible 1 is 90 mm, the inner diameter of the upper part is 112 mm, and the wall thickness 3mm, length 800mm; the width of the annular groove 11 is 18mm, the wall thickness is 2.5mm, and the depth is 15mm; the upper part of the second crucible 2 is cylindrical, and the lower part is funnel-shaped. The total length of the tube 4 is 100 mm, the wall thickness is 2.5 mm, and the internal diameter of the tail end of the thin tube 4 is 1 mm; the top of the first cover 3 is closed, the bottom is open and the side wall can be inserted into the annular groove 11, the internal diameter of the first cover 3 is 336 mm, and the wall thickness is 2.5 mm. mm, lengt...

Embodiment 3

[0058] Embodiment 3: prepare 6kg Cd 0.9 Zn 0.1 Te crystal material.

[0059] Preparation process:

[0060] 1) The first crucible 1, the second crucible 2, and the first cover 3 are made of quartz; the first crucible 1 has an annular groove 11 along the outer peripheral wall, the inner diameter of the lower part of the first crucible 1 is 90 mm, the inner diameter of the upper part is 112 mm, and the wall thickness 3mm, 800mm in length, the width of the annular groove 11 is 18mm, the wall thickness is 2.5mm, and the depth is 15mm. The upper part of the second crucible 2 is cylindrical, and the lower part is funnel-shaped. The outer diameter of the cylindrical tube is 110 mm, the length is 150 mm, the total length of the funnel and the thin tube 4 is 100 mm, the wall thickness is 2.5 mm, and the inner diameter of the tail end of the thin tube 4 is 2 mm; The top of the cover 3 is closed, the bottom is open, and the side wall can be inserted into the annular groove 11. The inne...

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Abstract

The invention relates to a preparation method of a cadmium telluride or cadmium zinc telluride polycrystal material. The preparation method is characterized by comprising the following preparation process flows of: (1) cleaning and drying a first crucible, a second crucible capable of being put into the first crucible and a first cover covering the first crucible; wherein the first crucible is provided with an annular groove along the peripheral wall; the top of the first cover is closed, the bottom is open, and the side wall can be inserted into the annular groove; and a hole is formed in thebottom of the second crucible; 2) weighing elemental tellurium and elemental cadmium according to the proportion of cadmium telluride to be synthesized; or weighing elemental tellurium, elemental cadmium and elemental zinc according to the ratio of cadmium zinc telluride to be synthesized. According to the preparation method, a liquid sealing technology is adopted to prevent volatilization loss of cadmium vapor, and the first crucible can be repeatedly used, so that the cost is reduced; by reducing the instantaneous reaction amount of tellurium and cadmium, the severe degree of the telluriumand cadmium combination reaction is reduced, the pressure resistance requirement on synthesis equipment is reduced, and the equipment cost is reduced.

Description

technical field [0001] The invention belongs to the field of preparation of crystal materials, in particular to a method for synthesizing cadmium telluride (CdTe) or cadmium zinc telluride (CdTe) 1- x Zn x Te) new method for polycrystalline material. Background technique [0002] CdTe and CdZnTe crystals are the preferred substrate materials for making HgCdTe infrared focal plane detectors, and ideal semiconductor materials for making nuclear radiation detectors. In addition, CdTe and CdZnTe crystals are used in the preparation of Thin-film solar cells, infrared windows, light modulators, etc. also have broad applications. [0003] In the preparation process of cadmium telluride and cadmium zinc telluride materials, the successful synthesis of polycrystalline materials of cadmium telluride and cadmium zinc telluride by simple substance of tellurium, simple substance of cadmium and simple substance of zinc is the key technology. Usually, the method of vacuum sintering and ...

Claims

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Application Information

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IPC IPC(8): C30B28/06C30B29/48
CPCC30B28/06C30B29/48
Inventor 孙士文
Owner 中科宏芯(常州)传感科技有限公司
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