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Rare-earth-doping-free high-Curie-temperature piezoelectric ceramic element and preparation method thereof

A piezoelectric ceramic element, rare earth-free technology, applied in the direction of using electric devices, using electromagnetic means, measuring ultrasonic/sonic/infrasonic waves, etc., can solve the problems of difficult-to-sensitivity piezoelectric vibration sensors and low piezoelectric performance, and achieve Effects of high Curie temperature, reduced volatilization, and excellent piezoelectric temperature stability

Active Publication Date: 2020-12-25
NAT UNIV OF DEFENSE TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

On the other hand, the existing CaBi without adding rare earth ions 2 Ta 2 o 9 Piezoelectric properties of bismuth layered ceramics with constant Curie temperature d 33 The value is low, generally no more than 15pC / N, it is difficult to be used as a sensitive element for the preparation of piezoelectric vibration sensors

Method used

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  • Rare-earth-doping-free high-Curie-temperature piezoelectric ceramic element and preparation method thereof
  • Rare-earth-doping-free high-Curie-temperature piezoelectric ceramic element and preparation method thereof
  • Rare-earth-doping-free high-Curie-temperature piezoelectric ceramic element and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0034] A rare-earth-doped high-Curie temperature piezoelectric ceramic element without rare earth doping in this embodiment has a general chemical formula:

[0035] 0.95CaBi 2 Ta 0.9 Nb 0.1 o 9 +0.05Na 0.45 K 0.05 Bi 2.5 Nb 2 o 9 +0.5wt%CoO+1wt%MnCO 3 .

[0036] The principal component is 0.95CaBi 2 Ta 0.9 Nb 0.1 o 9 +0.05Na 0.45 K 0.05 Bi 2.5 Nb 2 o 9 .

[0037] A preparation method of the rare earth-doped high Curie temperature piezoelectric ceramic element of this embodiment, comprising the following steps:

[0038] (1) Weigh the raw materials according to the proportioning ratio of the main component chemical formula, the raw materials include: Bi 2 o 3 (4N), Ta 2 o 5 (4N), Nb 2 o 5 (4N), Sb 2 o 3 (4N), CaCO 3 (GR), Na 2 CO 3 (3N), K 2 CO 3 (4N).

[0039] (2) Put the weighed raw materials into a ball mill tank for pre-milling, add an appropriate amount of isopropanol as a solvent, the mass ratio of raw materials and isopropanol is 1:0.3, th...

Embodiment 2

[0056] A rare-earth-doped high-Curie temperature piezoelectric ceramic element without rare earth doping in this embodiment has a general chemical formula:

[0057] 0.9CaBi 2 Ta 0.9 Nb 0.1 o 9 +0.05Na 0.45 K 0.05 Bi 2.5 Nb 2 o 9 +0.05SrBi 2 Nb 0.99 Sb 0.01 o 9 +0.5wt%CoO+1wt%MnCO 3 .

[0058] The principal component is 0.9CaBi 2 Ta 0.9 Nb 0.1 o 9 +0.05Na 0.45 K 0.05 Bi 2.5 Nb 2 o 9 +0.05SrBi 2 Nb 0.99 Sb 0.01 o 9 .

[0059] A preparation method of the rare earth-doped high Curie temperature piezoelectric ceramic element of this embodiment, comprising the following steps:

[0060] (1) Weigh the raw materials according to the chemical formula ratio of the main components, including: Bi 2 o 3 (4N), Ta 2 o 5 (4N), Nb 2 o 5 (4N), Sb 2 o 3 (4N), CaCO 3 (GR), Na 2 CO 3 (3N), K 2 CO 3 (4N), SrCO 3 (AR).

[0061] (2) Put the weighed raw materials into a ball milling tank, add an appropriate amount of isopropanol as a solvent, the mass ratio of ra...

Embodiment 3

[0070] A rare-earth-doped high-Curie temperature piezoelectric ceramic element without rare earth doping in this embodiment has a general chemical formula:

[0071] 0.8CaBi 2 Ta 0.85 Nb 0.15 o 9 +0.15Na 0.42 K 0.08 Bi 2.5 Nb 2 o 9 +0.05SrBi 2 Nb 0.99 Sb 0.01 o 9 +1wt%CoO+0.8wt%MnCO 3 .

[0072] The principal component is 0.8CaBi 2 Ta 0.85 Nb 0.15 o 9 +0.15Na 0.42 K 0.08 Bi 2.5 Nb 2 o 9 +0.05SrBi 2 Nb 0.99 Sb 0.01 o 9 .

[0073] A preparation method of the rare earth-doped high Curie temperature piezoelectric ceramic element of this embodiment, comprising the following steps:

[0074] (1) Weigh the raw materials according to the proportioning ratio of the main component chemical formula, the raw materials include: Bi 2 o 3 (4N), Ta 2 o 5 (4N), Nb 2 o 5 (4N), Sb 2 o 3 (4N), CaCO 3 (GR), Na 2 CO 3 (3N), K 2 CO 3 (4N), SrCO 3 (AR).

[0075] (2) Put the weighed raw materials into a ball milling tank, add an appropriate amount of isopropanol...

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Abstract

The invention discloses a rare-earth-doping-free high-Curie-temperature piezoelectric ceramic element, the general chemical formula of which is (1-x-y)CaBi2Ta2-aNbaO9+xNa0.5-bKbBi2.5Nb2O9+ySrBi2Nb2-cSbcO9+zwt%P, wherein x is greater than or equal to 0.05 and smaller than or equal to 0.85, and y is is greater than or equal to 0 and less than or equal to 0.1, and P is one of or a combination of twoof CoO and MnCO3. The invention also discloses a preparation method of the piezoelectric ceramic element. The piezoelectric ceramic element prepared by the method has the advantages of high Curie temperature and low aging rate.

Description

technical field [0001] The invention relates to the field of functional ceramics, in particular to a rare earth-doped high Curie temperature piezoelectric ceramic element and a preparation method thereof. Background technique [0002] The measurement of vibration or acceleration signal is one of the most basic measurement parameters in industry. As long as any equipment operates mechanically, it will generate a vibration signal. For the measurement of vibration signals, it can not only detect the current operating status of the equipment, but also give an alarm to abnormal signals in time to protect the equipment from major damage. Therefore, the measurement of vibration or acceleration signals is widely used in automatic control of equipment, fault warning and health diagnosis. With the rapid development of Industry 4.0, "Internet +", Internet of Things, etc., there is an explosive growth demand for sensors for various purposes such as automatic control, transportation, h...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/495C04B35/622C04B35/626C04B35/634C04B35/638C04B35/64C04B41/88C04B41/80G01H11/08
CPCC04B35/495C04B35/622C04B35/62675C04B35/6261C04B35/63416C04B35/638C04B35/64C04B41/88C04B41/80C04B41/5116C04B41/5122C04B41/00G01H11/08C04B2235/6562C04B2235/6565C04B2235/6567C04B2235/3208C04B2235/3298C04B2235/3255C04B2235/3201C04B2235/3213C04B2235/3294C04B2235/3275C04B2235/3262C04B41/4535C04B41/0072
Inventor 彭志航曹峰向阳陈莉
Owner NAT UNIV OF DEFENSE TECH
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