A three-color detector and its manufacturing method

A manufacturing method and detector technology, applied in the field of photodetectors, can solve the problems of limited information of the target and inability to accurately reflect accurate information and the like

Active Publication Date: 2021-11-02
ZHONGSHAN DEHUA CHIP TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Among them, infrared detectors are the most typical, and are widely used in weather and meteorological forecasting, satellite exploration and monitoring of earth resources, spectral analysis of ground features and landscapes, and crops. Existing infrared detectors are only effective for light waves in the infrared band, and can only Obtain a monochrome "black and white" photo of the target, the information of the target obtained is very limited, and cannot accurately reflect the accurate information of the detected target

Method used

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  • A three-color detector and its manufacturing method
  • A three-color detector and its manufacturing method
  • A three-color detector and its manufacturing method

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Embodiment Construction

[0021] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

[0022] In the description of the present invention, it should be understood that the orientation descriptions, such as up, down, front, back, left, right, etc. indicated orientations or positional relationships are based on the orientations or positional relationships shown in the drawings, and are only In order to facilitate the description of the present invention and simplify the description, it does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific ...

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Abstract

The invention discloses a three-color detector and a manufacturing method thereof. The three-color detector comprises: a GaN substrate arranged sequentially; an AlGaN sub-detector arranged between the AlGaN sub-detector and the GaN substrate There is a first buffer layer; the InGaAs sub-detector is connected to the AlGaN sub-detector through a bonding layer; the InGaNAs sub-detector is provided with a tunnel junction between the InGaAs sub-detector, and the InGaNAs sub-detector The detector is provided with a second buffer layer. By vertically integrating the detection structure of multiple bands of ultraviolet / visible light / infrared in the depth direction, the GaN material is used to respond to the ultraviolet band information of <365nm, the InGaAs material is used to respond to the 365~1700nm band information, and the InGaNAs material is used to respond to the mid-infrared band of 1700~3000nm information, realize simultaneous detection of ultraviolet / visible light / infrared bands, obtain "color" images of targets, and obtain target information more abundantly, accurately and reliably.

Description

technical field [0001] The invention relates to the field of photoelectric detectors, in particular to a three-color detector and a manufacturing method thereof. Background technique [0002] The principle of a photodetector is that radiation causes a change in the conductivity of the irradiated material. Photodetectors are widely used in various fields of military and national economy. Among them, infrared detectors are the most typical, and are widely used in weather and meteorological forecasting, satellite exploration and monitoring of earth resources, spectral analysis of ground features and landscapes, and crops. Existing infrared detectors are only effective for light waves in the infrared band, and can only The monochromatic "black and white" photos of the target are obtained, and the information of the target is very limited, which cannot accurately reflect the accurate information of the detected target. Contents of the invention [0003] The present invention ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/101H01L31/103H01L31/18
CPCH01L31/101H01L31/1035H01L31/184H01L31/1844Y02P70/50
Inventor 黄珊珊黄辉廉刘恒昌高熙隆杨文奕
Owner ZHONGSHAN DEHUA CHIP TECH CO LTD
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