A kind of Schottky diode with groove structure
A technology of Schottky diodes and Schottky barrier layers, which is applied in complex mathematical operations, semiconductor devices, electrical components, etc., and can solve problems such as complex costs
Active Publication Date: 2022-07-22
弘大芯源(深圳)半导体有限公司
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Problems solved by technology
[0002] At present, the smaller the reverse leakage current of a diode, the better its unidirectional conductivity. However, when studying how to manufacture a diode with a small reverse leakage current, it needs to be continuously manufactured and tested, which is very complicated and costly
Method used
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[0063] The preferred embodiments of the present invention will be described below with reference to the accompanying drawings. It should be understood that the preferred embodiments described herein are only used to illustrate and explain the present invention, but not to limit the present invention.
[0064] An embodiment of the present invention provides a Schottky diode with a groove structure, such as figure 1 shown, including:
[0065] semiconductor substrate 1;
[0066] The semiconductor layer 2 is disposed on the semiconductor substrate 1, and the upper surface of the semiconductor layer 2 is sequentially opened with a plurality of grooves 21, a first limit groove 22 and a plurality of second limit grooves 23; the inner and outer walls of the grooves 21 cover There is a first insulating layer, the inner and outer walls of the first limiting slot 22 are covered with a second insulating layer, and the inner and outer walls of the second limiting slot 23 are covered with ...
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The invention provides a Schottky diode with a groove structure, comprising: a semiconductor substrate; a semiconductor layer, which is arranged on the semiconductor substrate, and the upper surface of the semiconductor layer is sequentially provided with a plurality of grooves, a first limiting groove and a semiconductor layer. a plurality of second limiting grooves; a Schottky barrier layer, arranged on the semiconductor layer; a first contact layer, arranged on the Schottky barrier layer, and electrically connected to the Schottky barrier layer and the first electrode respectively ; The second contact layer is arranged on the semiconductor layer except for the area of the Schottky barrier layer, and is electrically connected to the semiconductor layer. In the Schottky diode with trench structure of the present invention, each groove forms the active area of the Schottky diode. When studying how to manufacture a diode with a smaller reverse leakage current, the distance between the grooves only needs to be changed. The test can be performed without the need to redesign and manufacture different diodes, which improves the convenience of research and reduces costs to a certain extent.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a Schottky diode with a groove structure. Background technique [0002] At present, the smaller the reverse leakage current of a diode, the better its unidirectional conductivity. However, when researching how to manufacture a diode with a smaller reverse leakage current, it is necessary to continuously manufacture and then test, which is very complicated and costly. SUMMARY OF THE INVENTION [0003] One of the objectives of the present invention is to provide a Schottky diode with a groove structure, each groove forms the active region of the Schottky diode, when studying how to manufacture a diode with a smaller reverse leakage current, as long as the change The distance between the grooves can be tested, and there is no need to redesign and manufacture different diodes, which improves the convenience of research and reduces the cost to a certain extent. [0004] An e...
Claims
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IPC IPC(8): H01L29/872H01L29/40G06F17/11
CPCH01L29/872H01L29/404H01L29/407G06F17/11
Inventor 洪学天林和牛崇实黄宏嘉
Owner 弘大芯源(深圳)半导体有限公司