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Radio frequency switch and preparation method thereof

A radio frequency switch and radio frequency technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problem of reducing the size of radio frequency switches

Pending Publication Date: 2022-07-29
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to achieve effective isolation of signals, a larger clearance area is generally set, but a larger clearance area is not conducive to the reduction of the size of the RF switch

Method used

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  • Radio frequency switch and preparation method thereof
  • Radio frequency switch and preparation method thereof
  • Radio frequency switch and preparation method thereof

Examples

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preparation example Construction

[0050] Based on this, this embodiment also provides a preparation method of a radio frequency switch, figure 1 It is a flow chart of the preparation method of the radio frequency switch. like figure 1 As shown, the preparation method of the radio frequency switch includes:

[0051] Step S1: providing a substrate, the substrate has a control area, a clearance area and a radio frequency area arranged in sequence along the first direction, the clearance area extending along the second direction;

[0052] Step S2: forming a control device and a radio frequency device on the substrate, and the control device and the radio frequency device are respectively located in the control area and the radio frequency area;

[0053] Step S3: forming a plurality of isolation structures and a dielectric layer on the substrate, and a plurality of the isolation structures are distributed side by side on the substrate in the clearance area along the second direction, and in the first direction a...

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Abstract

The invention provides a radio frequency device and a preparation method thereof, and the device comprises a substrate which is provided with a control region, a clearance region and a radio frequency region which are sequentially arranged in a first direction, and the clearance region extends in a second direction; the control device and the radio frequency device are respectively positioned on the substrate in the control area and the radio frequency area; the plurality of isolation structures are distributed on the substrate in the clearance area side by side along the second direction; the dielectric layer is located on the substrate and covers the control device, the radio frequency device and the remaining substrate in the clearance area in a conformal mode, and the dielectric constant of the dielectric layer is larger than that of the isolation structure. According to the isolation structure, the capacitive coupling effect between the control device and the radio frequency device can be reduced, so that crosstalk between signals is reduced, and a good isolation effect on the signals is achieved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a radio frequency switch and a preparation method thereof. Background technique [0002] The radio frequency device greatly facilitates the application in the field of wireless communication within a certain range. The wireless communication circuit composed of suitable inter-controller and radio frequency devices can be integrated on a small circuit board, and is used in wireless digital audio and digital video data transmission systems. , wireless remote control and telemetry systems, wireless data acquisition systems, wireless networks and wireless security systems and many other fields. [0003] When the control device is formed in the same substrate as the RF device, the performance of the device can be very unstable. This is mainly because the operating voltage of the control device and the radio frequency device has a large difference, resulting in a l...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/06H01L21/8232H01L21/762
CPCH01L27/0617H01L21/8232H01L21/76224
Inventor 孙华圳蒙飞
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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