Apparatus for processing substrate and method of doing the same
a substrate and apparatus technology, applied in the direction of resistor manufacturing, liquid/solution decomposition chemical coating, railway signalling, etc., can solve the problems of affecting the effect of resistor deformation, not suggesting an effective apparatus and method for doing, and affecting the effect of resistor pattern deformation
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first example
[0318]Hereinbelow is explained the method of a processing a substrate, in accordance with First Example.
[0319]The method in accordance with First Example is carried out for the following purposes (a) to (c):
[0320](a) when an underlying film (for instance, a substrate) is etched with an organic film pattern (for instance, a resist film) being used as a mask, the underlying film is etched to be tapered (for instance, see Japanese Patent Application Publication No. 2002-334830), or etched in a minute size (an organic film pattern is enlarged with respect to an area, or a contact hole is reduced with respect to a size to thereby reduce an etching size);
[0321](b) when an underlying film (for instance, a substrate) is etched with an organic film pattern (for instance, a resist film) being used as a mask, the underlying film is etched into a two-layered structure, two patterns different from each other, or a combination of a separate pattern and combined patterns (for instance, see FIGS. 2...
second example
[0514]The method in accordance with Second Example is explained hereinbelow.
[0515]The method in accordance with Second Example is carried out for the above-mentioned purposes (A) to (C), similarly to First Example. In other words, the method in accordance with Second Example relates to steps of processing an organic film pattern for the purposes (A) to (C).
[0516]FIG. 1B is a flow chart showing steps to be carried out in the method in accordance with Second Example.
[0517]As illustrated in FIG. 1B, the method includes, in sequence of, a first removal step J1, a first heating step S9 of heating a substrate and therefore an organic film pattern, a substrate-temperature controlling step S2 of controlling a temperature of the substrate and therefore the organic film pattern, a gas-atmosphere applying step S3 of applying gas atmosphere to the organic film pattern, a second heating step S4 of heating the substrate and therefore the organic film pattern, a second substrate-temperature contro...
third example
[0574]The method in accordance with Third Example is explained hereinbelow.
[0575]The method in accordance with Third Example is carried out for the above-mentioned purposes (A) to (C), similarly to First Example. In other words, the method in accordance with Third Example relates to steps of processing an organic film pattern for the purposes (A) to (C).
[0576]FIG. 1C is a flow chart showing steps to be carried out in the method in accordance with Third Example.
[0577]As illustrated in FIG. 1C, the method includes, in sequence of, a first removal step J1, a second removal step J2, a first heating step S9 of heating a substrate and therefore an organic film pattern, a substrate-temperature controlling step S2 of controlling a temperature of the substrate and therefore the organic film pattern, a gas-atmosphere applying step S3 of applying gas atmosphere to the organic film pattern, a second heating step S4 of heating the substrate and therefore the organic film pattern, a second substr...
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Abstract
Description
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