Plating solution and metal composite and method of manufacturing the same
a technology of metal composite and plating solution, which is applied in the direction of carbon-silicon compound conductors, coatings, and fulllerenes, etc., can solve the problems of high ampacity development of wire materials, and achieve the effect of improving current capacity, conductivity and electrical stability
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synthesis example
[0093]10 grams (g) of a hydroxyl fullerene precursor (C60(OH)6-12, Nanom Spectra D100, Frontier Carbon Corp.) is dispersed in a 30% hydrogen peroxide solution and then, stirred at 60° C. for 48 hours in a flask to synthesize a hydroxyl fullerene represented by Chemical Formula 1 (C60(OH)24-36, Peak: C60(OH)31. In C60(OH)n (Peak), n denotes the number of OH at a maximum peak on a mass spectrum (LCMS) of FIGS. 7 and 8 and is marked as an integral by rounding off to the nearest whole number.
[0094]When measured in a dynamic light scattering method (SUPTEK Yag Keceleri San. ve Tic. A.S.), the hydroxyl fullerenes have an average particle diameter of about 1 nanometer (nm).
Preparation of Plating Solution
example
[0103]Each of Ru / Ta is subsequently coated with a thickness of 10 nm on a silicon wafer, the silicon wafer (a cathode) and an opposed electrode (a positive electrode) are disposed to face each other in the plating solution according to Preparation Example 3, and then, the plating solution is stirred at 20° C. While the plating solution is stirred, the positive electrode and the cathode are connected to power and then, plated by flowing a current with various average current densities (0.1 amperes per square decimeter (A / dm2) to about 1.0 A / dm2) for 45 minutes. The obtained Cu plating layer (including a metal composite material) has a thickness of 1 micrometer (μm).
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