Magnetoresistive random access memory

a random access and magnetic technology, applied in the field of magneticonductor devices, can solve the problems of high power consumption, high chip area, and high cos

Active Publication Date: 2021-12-23
UNITED MICROELECTRONICS CORP
View PDF36 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This configuration enhances the performance of MRAM devices by reducing chip area, cost, and power consumption while improving sensitivity and temperature stability, addressing the shortcomings of existing MRAM technologies.

Problems solved by technology

Nevertheless, most of these products still pose numerous shortcomings such as high chip area, high cost, high power consumption, limited sensibility, and easily affected by temperature variation and how to come up with an improved device to resolve these issues has become an important task in this field.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Magnetoresistive random access memory
  • Magnetoresistive random access memory
  • Magnetoresistive random access memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0009]Referring to FIGS. 1-7, FIGS. 1-7 illustrate a method for fabricating a semiconductor device, or more specifically a MRAM device according to an embodiment of the present invention. As shown in FIG. 1, a substrate 12 made of semiconductor material is first provided, in which the semiconductor material could be selected from the group consisting of silicon (Si), germanium (Ge), Si—Ge compounds, silicon carbide (SiC), and gallium arsenide (GaAs), and a MTJ region 14 and a logic region 16 are defined on the substrate 12.

[0010]Active devices such as metal-oxide semiconductor (MOS) transistors, passive devices, conductive layers, and interlayer dielectric (ILD) layer 18 could also be formed on top of the substrate 12. More specifically, planar MOS transistors or non-planar (such as FinFETs) MOS transistors could be formed on the substrate 12, in which the MOS transistors could include transistor elements such as gate structures (for example metal gates) and source / drain region, spa...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A semiconductor device includes: a substrate comprising a magnetic tunneling junction (MTJ) region and a logic region; a first MTJ on the MTJ region; a first metal interconnection on the logic region; and a cap layer extending from a sidewall of the first MTJ to a sidewall of the first metal interconnection. Preferably, the cap layer on the MTJ region and the cap layer on the logic region comprise different thicknesses.

Description

CROSS REFERENCE TO RELATED APPLICATIONS[0001]This is a continuation application of U.S. patent application Ser. No. 16 / 589,083, filed on Sep. 30, 2019, and all benefits of such earlier application are hereby claimed for this new continuation application.BACKGROUND OF THE INVENTION1. Field of the Invention[0002]The invention relates to a semiconductor device, and more particularly, to a magnetoresistive random access memory (MRAM).2. Description of the Prior Art[0003]Magnetoresistance (MR) effect has been known as a kind of effect caused by altering the resistance of a material through variation of outside magnetic field. The physical definition of such effect is defined as a variation in resistance obtained by dividing a difference in resistance under no magnetic interference by the original resistance. Currently, MR effect has been successfully utilized in production of hard disks thereby having important commercial values. Moreover, the characterization of utilizing GMR materials ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & AuthorityApplications(United States)
IPC IPC(8): H01L43/02H01L27/22H10N50/80H10N50/01H10N50/10
CPCH01L43/02H01L43/10H01L27/222H10B61/22H10N50/10H10N50/85H10N50/80H10N50/01G11C11/161H10B61/00
InventorWANG, HUI-LINWANG, YU-PINGWENG, CHEN-YIHSIEH, CHIN-YANGTSAI, SI-HANCHANG, CHE-WEIJHANG, JING-YIN
OwnerUNITED MICROELECTRONICS CORP