Electronic packaging materials for use with low-k dielectric-containing semiconductor devices

a technology of dielectric-containing semiconductors and packaging materials, which is applied in the direction of semiconductor devices, semiconductor/solid-state device details, electrical apparatus, etc., can solve the problems of increasing cross-talk concerns, affecting the progress of the project, so as to reduce the stress of the internal packag

Inactive Publication Date: 2009-09-01
HENKEL CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

"The present invention provides a method for improving the reliability of semiconductor devices by reducing internal stresses on low-k ILDs. The invention suggests using a specific material combination of low-modulus, high-CTE epoxy-based material, with a ratio of modulus to temperature between -65°C and -125°C within a range of -10 MPa / °C to -12 MPa / °C. This material combination can significantly reduce internal stresses on semiconductor packages assembled with low-K ILDs. The invention also suggests using a heat curable underfill composition between the semiconductor chip and the circuit board, with a low-C TE of about -70°C to -120°C. The invention also provides pre-applied underfill compositions and integrated circuit chip assemblies using the specific material combination."

Problems solved by technology

Cross talk is a common problem in integrated circuit manufacturing, as it causes malfunction in the circuit.
However, with the continued increase in the density of inputs / outputs on a single chip, the cross talk concerns increase.
Progress in that regard has been hampered to date, however, as chipmakers struggle with achieving acceptable package level reliability.
Conventional electronic packaging materials, such as low coefficient of thermal expansion (“CTE”), high modulus, epoxy-based molding compounds, encapsulants, die attach adhesive materials and underfill sealant materials appear to be incapable of providing the necessary protection against package stresses to prevent damage to the low-k ILD's.
The low-k ILD's, being fragile in nature, are generally weaker and more brittle than conventional ILD materials, such as silicon oxides, silicon nitrides, fluorinated silicon glass, and the like, and as a result lead to fracture and cracks during thermal excursions due to induced stresses.
The fracture and cracking translate into delamination when coupled with such conventional electronic packaging materials.
Little progress has been reported to date, however, at reducing the internal package stresses that lead to the low-k ILD cracking failures.

Method used

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  • Electronic packaging materials for use with low-k dielectric-containing semiconductor devices
  • Electronic packaging materials for use with low-k dielectric-containing semiconductor devices
  • Electronic packaging materials for use with low-k dielectric-containing semiconductor devices

Examples

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examples

[0118]Sample No. 1, which is used for comparative purposes, is an epoxy-based underfill material available commercially from Henkel Corporation, City of Industry, Calif. Sample Nos. 2-4 were evaluated for their performance, as were Sample Nos. 6-8. Sample Nos. 5 and 9 were used for comparative purposes, though as encapsulants as they too are available commercially from Henkel Corporation.

[0119]Sample Nos. 1-9 are set forth below in Tables 1a and 1b.

[0120]

TABLE 1aSample Nos. / Amt. (Wt. %)Components1234Epoxy Resin12.415.415.044.5Epoxy Toughener12.015.09.010.0MHHPA Hardener24.028.0——Amine Hardener——15.044.5Alumina Filler50.040.0——Silica Filler——60.0—Imidazole Catalyst0.600.60——Black Pigment0.500.500.500.50Silane Adhesion0.500.500.500.50Promoter

[0121]

TABLE 1bSample Nos. / Amt. (Wt. %)Components56789Epoxy Resin12.3—24.520.06.25Epoxy Toughener4.014.5—20.0—MHHPA Hardener12.214.0—38.06.25Amine Hardener—————Phenolic Hardener——24.5——Alumina Filler———20.0—Silica Filler70.060.050.0—86.0Imidazole C...

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Abstract

Electronic packaging materials for use with Low-k dielectric-containing semiconductor devices are provided.

Description

[0001]This U.S. patent application is a Provisional Application of 60 / 518,298, filed on Nov. 10, 2003.BACKGROUND OF THE INVENTION[0002]Low dielectric constant (“low-k”) dielectric materials (or interlayer dielectric layers, “ILD's”) play an important role in the future development of advanced integrated circuit manufacturing, enabling the use of copper interconnects in sub-0.18 micron fabrication processes. Low-k ILD's are used in integrated circuit manufacturing to insulate copper interconnects from their surroundings, ensuring less cross talk between interconnections. Cross talk is a common problem in integrated circuit manufacturing, as it causes malfunction in the circuit. Cross talk becomes even more pronounced as the size of the integrated circuit continues to shrink. The dielectric constant of conventional interlayer materials used in integrated circuit manufacturing ordinarily resides in the >3.0 range. However, with the continued increase in the density of inputs / outputs...

Claims

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Application Information

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Patent Type & AuthorityPatents(United States)
IPC IPC(8): H01L21/44H01L21/48H01L21/50H01L21/56H01L21/60H01L21/98H01L25/065
CPCH01L21/563H01L25/0657H01L25/50H01L24/81H01L2224/16145H01L2224/32145H01L2224/48091H01L2224/48227H01L2224/73203H01L2224/73265H01L2224/81801H01L2225/0651H01L2225/06513H01L2225/06517H01L2225/06575H01L2225/06582H01L2924/01004H01L2924/01012H01L2924/01057H01L2924/01078H01L2924/01079H01L2924/15311H01L2924/19041H01L2224/16225H01L2224/32225H01L2224/73204H01L2224/73257H01L2924/01019H01L2224/81011H01L2924/00014H01L2924/00H01L2924/00012H01L24/73H01L2924/14H01L2224/05569H01L2224/05024H01L2224/05008H01L2224/05026H01L2224/05571H01L2224/05001H01L2224/05147H01L2224/05647H01L24/05H01L24/16H01L2224/131H01L2924/014H01L23/48
InventorTODD, MICHAEL G.HUNEKE, JAMES T.CRANE, LAWRENCE N.FISCHER, GORDON C.
OwnerHENKEL CORP