3results about How to "Reduce module cost" patented technology

Embodiments of this application disclose a charging module, applied to the vehicle field. The charging module includes an AC-DC circuit, a first DC-DC circuit, and a first direct current transmission circuit. A first end of the AC-DC circuit is connected to an alternating current grid, a second end is connected to a first end of the first DC-DC circuit through a high-voltage direct current bus, and a second end of the first DC-DC circuit is connected to a to-be-charged apparatus. A second end of the first direct current transmission circuit is configured to connect to an external direct current apparatus. The AC-DC circuit is configured to convert, into a first direct current, an alternating current provided by the alternating current grid. The first DC-DC circuit is configured to: convert a high-voltage direct current on the high-voltage direct current bus into a second direct current, and transmit the second direct current to the to-be-charged apparatus. The direct current transmission module is configured to transmit a direct current between the high-voltage direct current bus and the external direct current apparatus.

The invention relates to an integrated photoelectric relay and a manufacturing method thereof. The manufacturing method of the integrated photoelectric relay comprises the steps that a low-doping substrate is used, a first P-N structure, a second P-N structure and an N-P-N structure are formed on an epitaxial layer, and the epitaxial layer is divided into a high-voltage area and a low-voltage area which are electrically isolated from each other through dry etching. Next, an isolation layer is deposited on the epitaxial layer, mask etching is performed to generate a plurality of patterns, a metal layer is deposited, a light emitting diode is formed on the first P-N structure based on the patterns, a photodiode is formed on the second P-N structure, and at least one metal oxide semiconductor field effect transistor is formed on the N-P-N structure. All elements of the integrated photoelectric relay are manufactured on the same substrate by using the same manufacturing process, the withstand voltage of the alternating current switch can be greatly improved without additional elements, the chip area is reduced, and meanwhile, the module cost is reduced.