The invention relates to a method for preparing high-purity
silicon tetrafluoride by dissociating fluosilicate through low-temperature
plasma. The method comprises the following steps: crushing fluosilicate in a
crusher, and heating and
dewatering in a vibrated
fluidized bed; the treated fluosilicate
powder is conveyed to a
plasma reactor through carrier gas to be dissociated to generate
silicon tetrafluoride; and finally,
silicon tetrafluoride generated by reaction enters a first-stage condenser to separate
solid metal fluoride, then enters a cold hydrazine to be cooled for first-stage
impurity removal, and then enters an adsorption
tower for second-stage
impurity removal, so that high-purity
silicon tetrafluoride is obtained. The fluosilicate is dissociated by adopting a low-temperature
plasma technology, so that high-purity
silicon tetrafluoride is efficiently prepared under a low-temperature condition; meanwhile, the one-
step method is short in conversion process,
fluorine-containing waste is not generated, a simple purification step is combined, the production cost and the environment-friendly burden are reduced, the
raw material adaptability is high, and operation is easy.