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Method for preparing high-purity silicon tetrafluoride by dissociating fluosilicate through low-temperature plasma

PendingCN121948461AAvoid high temperature pyrolysisavoid demandingHalogenated silanesPlasma technologyFluidized bed
The invention relates to a method for preparing high-purity silicon tetrafluoride by dissociating fluosilicate through low-temperature plasma. The method comprises the following steps: crushing fluosilicate in a crusher, and heating and dewatering in a vibrated fluidized bed; the treated fluosilicate powder is conveyed to a plasma reactor through carrier gas to be dissociated to generate silicon tetrafluoride; and finally, silicon tetrafluoride generated by reaction enters a first-stage condenser to separate solid metal fluoride, then enters a cold hydrazine to be cooled for first-stage impurity removal, and then enters an adsorption tower for second-stage impurity removal, so that high-purity silicon tetrafluoride is obtained. The fluosilicate is dissociated by adopting a low-temperature plasma technology, so that high-purity silicon tetrafluoride is efficiently prepared under a low-temperature condition; meanwhile, the one-step method is short in conversion process, fluorine-containing waste is not generated, a simple purification step is combined, the production cost and the environment-friendly burden are reduced, the raw material adaptability is high, and operation is easy.
Owner:PERIC SPECIAL GASES CO LTD