Method for manufacturing laser devices

一种激光器件、激光器的技术，应用在激光器零部件、激光器、半导体激光器等方向，能够解决缩短寿命、工作电压升高、劣化驱动电流等问题，达到防止再次附着、防止驱动电流增大、长使用寿命的效果

Inactive Publication Date: 2008-09-17
SHARP KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, according to the results of experiments performed by the inventors, it was found that, except for Au and Pt, metals used in semiconductor laser chips were oxidized, and therefore, deterioration such as an increase in operating voltage occurred when this method was employed.
For example, if the solder that fixes the GaN-based semiconductor laser chip to the stem or the electrode used for the GaN-based semiconductor laser chip is oxidized by ozone, performance degradation or shortened life may occur
On the other hand, sufficient effect cannot be obtained if ultraviolet irradiation is performed only without an ozone atmosphere
We have found that, especially in continuous operation at an ambient temperature of 60°C, there will be degradation (increased drive current)

Method used

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  • Method for manufacturing laser devices
  • Method for manufacturing laser devices
  • Method for manufacturing laser devices

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0066] (Structure of Nitride Semiconductor Laser Device)

[0067] Figure 1A and Figure 1B are a top view and a side view illustrating a schematic structure of a nitride semiconductor laser device according to the present invention, respectively. figure 2 A schematic structure of a laser chip mounting bracket constituting a nitride semiconductor laser device is shown.

[0068] like Figure 1B As shown, the nitride semiconductor laser device 101 includes a laser chip fixing bracket 100 and a tube case 106 covering and sealing the laser chip fixing bracket 100 . The laser chip fixing mount 100 includes a base 102 on which a nitride semiconductor laser chip 103 is mounted, and a stem 104 having a block portion 105 to which the base 102 is fixed. The stem 104 and its land portion 105 are integrally molded, and are composed of a metal such as copper or iron on which Au or the like is plated.

[0069] like Figure 1A As shown, the package 106 is equipped with a light transpare...

no. 2 example

[0112] Next, the manufacturing method according to the second example of the present invention will be described mainly around the differences from the manufacturing method in the above-mentioned first example. The steps up to the simultaneous die bonding and wire bonding of the nitride semiconductor laser chip 103, the submount 102, and the stem 104 are similar to those in the manufacturing method according to the first example. After completing the steps, the laser chip holder 100 and the package 106 are put into Figure 7 The ozone generator 290 is shown. Oxygen 295 under atmospheric pressure (having a purity of 99.9999% and a dew point of -10° C.) is introduced through the air inlet 291, and gradually sprayed out through the gas outlet 292. At this time, the ozone generator 290 is almost only filled with oxygen. The laser chip fixing bracket 100 and the tube shell 106 are heated to a predetermined temperature of 220° C., and the ultraviolet lamp 293 is heated at 5.1 mW / cm...

no. 3 example

[0117] Next, the manufacturing method according to the third example of the present invention will be described mainly around the differences from the manufacturing method in the above-mentioned first example. The steps up to the simultaneous die bonding and wire bonding of the nitride semiconductor laser chip 103, the submount 102, and the stem 104 are similar to those in the manufacturing method according to the first example. After completing the steps, the laser chip holder 100 and the package 106 are put into the Figure 8 Plasma generator 300 is shown, and argon and oxygen are introduced through gas inlet 311. The flow rate of argon was set to 100 seem and the flow rate of oxygen was set to 100 seem. The vacuum pump 313 connected to the gas outlet 312 reduces the pressure inside the plasma generator 300 to 10Pa.

[0118] Next, the temperature of the laser chip fixing bracket 100 and the package 106 is set to 220° C., and an oxygen plasma treatment is performed for 30 m...

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Abstract

A method for manufacturing a laser device includes fixing a laser chip to a holder via a metal having a low melting point by melting the metal at a temperature higher than the melting point, heating the holder to which the laser chip is fixed at a heat treatment temperature that is lower than the melting point and, thereafter, sealing the laser chip by covering the holder to which the laser chip is fixed with a cap. The heating step may be performed in an atmosphere in which ozone is generated or an atmosphere in which oxygen plasma is generated. Furthermore, the holder to which the laser chip is fixed is covered with a cap to make a hermetically sealed package in dry air or an inert gas, and then an ultraviolet ray is irradiated into the package while it is heated.

Description

technical field [0001] The present invention relates to a method of manufacturing a laser device used as a light source for optical disc drives, testers, lighting devices, analyzers and the like. In particular, the present invention relates to a method for manufacturing a short-wavelength laser device, such as a gallium nitride semiconductor laser device, which emits a blue, violet, near-ultraviolet or ultraviolet laser beam in the short-wavelength range. Background technique [0002] Group III nitride semiconductors such as GaN, AlGaN, GaInN, and AlGaInN (hereinafter simply referred to as “gallium nitride-based semiconductors”) have a wider energy bandgap than AlGaInAs-based semiconductors or AlGaInP-based semiconductors. Therefore, such a semiconductor material is capable of emitting light having a short wavelength, and is more excellent in light emission efficiency since it belongs to a direct transition type. Gallium nitride-based semiconductors having these characteris...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): H01S5/022H01S5/323H01S5/343H01S5/00
Inventor石田真也小河淳花冈大介
OwnerSHARP KK