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Plasma processing apparatus

A plasma and processing device technology, applied in the field of plasma processing devices, can solve the problem that the deposited film or the like cannot be removed and the like

Active Publication Date: 2009-12-16
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In this way, cations are attracted to the ground electrode with very low energy, so deposited films or the like cannot be removed

Method used

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  • Plasma processing apparatus
  • Plasma processing apparatus
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Embodiment Construction

[0028] Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0029] First, a plasma processing apparatus according to a first embodiment of the present invention will be described.

[0030] figure 1 is a cross-sectional view schematically showing the configuration of the plasma processing apparatus according to the present embodiment. This plasma processing apparatus is configured to perform PIE (reactive ion etching) processing on a semiconductor wafer W as a substrate.

[0031] Such as figure 1 As shown in , the plasma processing apparatus 10 has a cylindrical substrate processing chamber 11 , and a processing space S exists in the substrate processing chamber 11 . Also, disposed in the substrate processing chamber 11 is a cylindrical susceptor 12 (RF electrode) as a mount on which a semiconductor wafer W (hereinafter simply referred to as "wafer W") having a diameter of, for example, 300 mm is plac...

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Abstract

A plasma processing apparatus which enables an insulating film on a grounding electrode to be removed. A plasma processing apparatus has a substrate processing chamber having therein a processing space in which plasma processing is carried out on a substrate, an RF electrode that applies radio frequency electrical power into the processing space, a DC electrode that applies a DC voltage into the processing space, and a grounding electrode that is exposed to the processing space. The grounding electrode and the RF electrode are adjacent to one another with an insulating portion therebetween, and a distance between the grounding electrode and the RF electrode is set in a range of 0 to 10 mm.

Description

technical field [0001] The present invention relates to a plasma processing apparatus, and more particularly to a plasma processing apparatus including electrodes connected to a DC power source. Background technique [0002] A parallel plate type plasma processing apparatus is known, which has: a substrate processing chamber containing a processing space into which a wafer is transferred as a substrate; a lower electrode arranged in the substrate processing chamber and connected to a radio frequency power supply; and an upper electrode arranged to face the lower electrode. In such a plasma processing apparatus, a processing gas is introduced into a processing space, and radio frequency power is applied to the processing space between an upper electrode and a lower electrode. When the wafer has been transferred into the processing space and mounted on the lower electrode, the introduced processing gas is converted into plasma by radio frequency power to generate ions and the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00H01L21/3065C23F4/00H05H1/00H01J37/32H01J37/00
CPCH01J37/32082H01J37/32532
Inventor 本田昌伸松井裕
Owner TOKYO ELECTRON LTD