Faraday apparatus for angle measurement of parallel beam

Abstract

The invention discloses a parallel-beam angle measurement Faraday device of an ion implanter, relates to the ion implanter and belongs to the manufacturing field of semiconductors. The structure is as follows: the parallel-beam angle measurement Faraday device is composed of a Faraday collection frame, an electronic suppression plate, a bottom plate of the collection frame, seven fixed-angle Faraday cups and a moving Faraday cup, the Faraday collection frame collects incident ion beam flow, the electronic suppression plate suppresses the electron overflow generated by the bombardment on metalbodies of the Faraday cups by ion beams, the angle collection bottom plate is used for the vacuum connection and the sealing of the Faraday collection frame and the Faraday cups, the seven fixed-angle Faraday cups measure the current intensity of the ion beams, the central position of the implanted ion beams is determined by being combined with the moving Faraday cup which is arranged in a targetroom area, when the parallel beams are the incident beams which are perpendicular to a crystal plane, the central position of the blocking beams of the moving Faraday cup is consistent with the center of the measuring beams of the fixed Faraday cups, and the current of the fixed-angle Faraday cups simultaneously achieves the peak value at the position when the current of the moving Faraday cup achieves the peak value.

Description

technical field The invention relates to a Faraday device for measuring the angle of a parallel beam of an ion implanter, relates to an ion implanter and belongs to the field of semiconductor manufacturing. technical background In the ion implantation process of wafers with a size of 200mm or more, the angle of the beam flow direction of the parallel ion beam to be implanted in the horizontal plane relative to the normal direction of the wafer at the vertical implantation position on the target will affect the effective beam width and beam current of the actual implantation The offset of the center relative to the center of the wafer affects the uniformity and accuracy of the implant dose. In order to monitor the angle change of the parallel beam during injection in real time, an angle measurement Faraday device is used to detect the stability of the parallel beam. After the measured angle value is fed back to the parallel beam control system, the electromagnetic parameters...

AI Technical Summary

Problems solved by technology

In the ion implantation process of wafers with a size of 200mm or more, the angle of the beam flow direction of the parallel ion beam to be implanted in the horizontal plane relative to the normal direction of the wafer at the vertical implantation position on the target will affect the effective beam width and beam current of the actual implantation The offset of the center relative to the center of the wafer, which in turn affects the uniformity and accuracy of the implant dose

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