Dry cleaning method during preparing semi-conductor

Abstract

The invention provides a dry cleaning method in the process of manufacturing a semiconductor, which comprises: a), the prior dry cleaning step; and b), the sweeping step, namely nitrogen or inert gas is introduced at the moment when a plasma is burned out. The inert gas used by the dry cleaning method is argon gas or helium gas; the chamber pressure in the sweeping step is between 60 and 150 mT and preferably between 60 and 130 mT; and the flow rate of introduced gas is between 120 and 250 sccm, and the introducing time is between 3 and 10 seconds. The method can effectively reduce residual particles in the prior dry cleaning method and provide a clean environment for subsequent process steps, so as to guarantee the yield of products.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a dry cleaning method in the semiconductor manufacturing process. Background technique [0002] In the semiconductor manufacturing process, especially for the etching process, whether the process chamber can maintain a highly pure environment is an important aspect to measure the performance of the machine. When the etching process is performed, an absolutely pure etching environment needs to be maintained inside the process chamber to ensure the yield rate of the chip in the production process. However, during the etching process, due to the bombardment of the plasma on the wafer surface and the reaction between the process gas and the wafer material, some process by-products, such as polymers, are often produced and adhere to the inner wall surface of the chamber. Among these products, some are relatively dense and will be relatively firmly attached to the inner surface...