Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Self-adaptive starting method of NAND flash memory

An adaptive, flash memory technology, applied in the field of flash memory systems

Active Publication Date: 2009-08-05
PHICOMM (SHANGHAI) CO LTD
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional NAND boot design can only be implemented on one of the structures. To be compatible with all NAND flash memories, there must be a method to automatically identify the NAND type

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Self-adaptive starting method of NAND flash memory
  • Self-adaptive starting method of NAND flash memory
  • Self-adaptive starting method of NAND flash memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0044] Such as Figure 1-2 As shown, a NAND flash self-adaptive startup method sends different row and column address combinations to the NAND flash in sequence, and then detects the response of RB. When the RB responds to a normal row and column address, it is the row and column address information of the NAND flash memory, and the obtained After the row and column address information is described, the system configuration information including all information is read from the NAND, and the system is started.

[0045] The sending is to send the address and command to the NAND flash memory through the function Read_NandFlash(). The Read_NandFlash() function is mainly to send the row and column addresses and commands to the flash memory in order according to the address requirements of the flash memory. The command is mainly a read command. This function is generally used to read data from the flash memory. Here it is used to help detect the read command of the flash memory. R...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

This invention discloses a NAND flash memory self-adapting starting method, comprising following steps: sequentially sending different line-column address combinations, then detecting RB reaction, when the RB reaction is a normal line-column address, then the line-column address combination is the line-column address information of the NAND flash memory, after acquiring the line-column address information, then reading the system configuration information containing all information in the NADA, starting the system. This invention uses the method of using different responses of the NAND flash memory control line RB to automatically identify the NAND flash memory , then searches the configuration information so as to accurately the system and solve the problem that the system only can be started from a certain of NAND.

Description

technical field [0001] The invention relates to a system using a flash memory in a digital product, in particular to a method for self-adaptive starting of a NAND flash memory. Background technique [0002] The use of embedded systems is becoming more and more common in the electronics industry, and the capacity of system software codes is also increasing, and the required storage space is also increasing. Traditional system codes are all stored in NOR flash memory. NOR has many advantages: convenient address access, fast data reading speed, almost no bad sectors, etc., and it is widely used. However, NOR also has great disadvantages. Compared with NAND, the capacity is generally smaller, and the price is also much higher. With the demand for system code capacity gradually increasing, NAND flash memory gradually replaces NOR in many applications. At present, in the design of using NAND flash memory to start, it supports at most one kind of NAND flash memory at the same time...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06F3/06G06F9/445
Inventor 孙银明
Owner PHICOMM (SHANGHAI) CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com