Unlock instant, AI-driven research and patent intelligence for your innovation.

System and method for arranging heating element in crystal growth apparatus

A technology for crystal growth and heating components, applied in crystal growth, single crystal growth, single crystal growth, etc., can solve problems such as difficult heat flow and increased system complexity

Inactive Publication Date: 2011-02-16
IBC SOLAR
View PDF1 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, using multiple heating components increases system complexity and makes it difficult to precisely control heat flow, especially in a production environment

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • System and method for arranging heating element in crystal growth apparatus
  • System and method for arranging heating element in crystal growth apparatus
  • System and method for arranging heating element in crystal growth apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] The present invention can be clearly understood with reference to the following definitions:

[0020] As used in the specification and claims, the singular forms "a", "an" and "the" include plural reference unless the context clearly dictates otherwise relation.

[0021] "Furnace" or "crystal growth apparatus" as described herein refers to any equipment or apparatus used to promote crystal growth and / or directional solidification, including but not limited to crystal growth furnaces and directional solidification (DSS) furnaces , while such furnaces are particularly useful for growing silicon ingots for photovoltaic (PV) and / or semiconductor applications.

[0022] A system for deploying a heating element in a crystal growth apparatus (e.g., a furnace for promoting crystal growth and / or directional solidification) preferably includes a crucible disposed on a directional solidification block in the furnace, the crucible configured to accommodate Set raw material such as...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Systems and methods for arranging a heating element in a crystal growth apparatus include connecting elements such as heater clips used to interconnect one or more heating components of the heating element, and to connect at least one of the heating components with the crystal growth apparatus. The heating components can be electrically and thermally coupled, and can be connected via the same circuit, in order to simplify control of the heating element.

Description

technical field [0001] The present invention relates to furnaces for crystal growth and directional solidification, and more particularly to systems and methods for deploying at least one heating assembly in a crystal growth apparatus. Background technique [0002] Directional solidification systems (DSS) are used to produce polysilicon ingots, eg for the photovoltaic industry. DSS furnaces are used for crystal growth and directional solidification of starting materials such as silicon. In the DSS process, silicon feedstock can be melted and directional solidified in the same furnace. In an existing method, a crucible containing silicon charge is placed in a furnace, and a heating element is arranged near the crucible. [0003] Heating elements for DSS furnaces can be resistive or inductive. In the case of resistive heating, current flows through a resistor and heats the heating element, which can be designed with specific materials, resistivity, shape, thickness, and cur...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/042C30B11/00C30B28/06C30B29/06C30B35/00B22D27/04
CPCB22D27/045C30B28/06H01L31/04C30B29/06H01L31/182C30B35/00C30B11/003Y02P70/50Y10T29/49826
Inventor 钱德拉·P·卡塔克圣塔纳·润格哈文·帕萨萨拉梯迪恩·斯凯尔顿宁·端木卡尔·查捷
Owner IBC SOLAR