Method for improving sapphire crystal ingot bar taking yield
A sapphire and yield technology, applied in stone processing equipment, fine working devices, manufacturing tools, etc., can solve the problems of reducing the yield of sapphire crystal ingot 1, limiting the number of sapphire crystal ingots, and sapphire crystal loss, etc. Achieve the effect of improving cutting efficiency, reducing processing cost, and small outer diameter
Active Publication Date: 2013-08-28
ECO POWER WUXI
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[0005] Depend on Figure 3~Figure 7 It can be seen that when the sleeve 9 of the tubular core drilling machine is used to take the sapphire crystal ingot 1, a relatively large amount of sapphire crystal loss will be generated. The distance is large, and the number of sapphire crystal ingots cut out from the sapphire crystal ingot 1 of the same scale is limited, which reduces the yield of the sapphire crystal ingot 1.
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[0028] The present invention will be further described below in conjunction with specific drawings and embodiments.
[0029] From the above analysis, it can be seen that when using the sleeve 9 to sample the sapphire crystal ingot 1, it is first necessary to cut out the processing plane 7 on the sapphire crystal ingot 1; The cutting loss 8 of the hungry sleeve produced on the above is relatively large; and in order to make the sapphire crystal ingot after taking out use the follow-up processing requirements, it is necessary to perform a secondary cutting operation on the sapphire crystal ingot. When sapphire crystal ingots are used, a large amount of sapphire crystal ingots will be wasted, the yield of rods is low, the cutting accuracy is low, and the use cost is high.
[0030] In order to avoid defects when the existing sapphire crystal ingots are taken, the method for improving the yield of the rods for the sapphire crystal ingots 1 includes the following steps:
[0031] a....
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The invention relates to a method for improving sapphire crystal ingot bar taking yield. The method comprises the following steps of: a. providing a grown sapphire crystal ingot; b. installing the sapphire crystal ingot on a machining table; c. cutting the sapphire crystal ingot on the machining table by utilizing a diamond line, wherein the sapphire crystal ingot rotates along with the machiningtable during cutting and is cut by the diamond line according to set shape and dimension; and d. taking out the cut crystal bar, and carrying out next crystal bar cutting on the sapphire crystal ingot. In the invention, the diamond line corresponds to and matches with the moving direction of the sapphire crystal ingot to complete once sapphire crystal bar taking process; since the diamond line has small outer diameter, the material waste can be reduced during the process of cutting sapphire crystal bars, and the distance between adjacent sapphire crystal bar cuts also can be reduced, thus greatly improving the sapphire crystal bar taking yield rate; and the process operation is simple, the cutting efficiency can be improved, the machining cost can be lowered, the range of application is wide and the safety and reliability can be achieved.
Description
technical field [0001] The invention relates to a sapphire cutting method, in particular to a method for improving the yield of sapphire crystal ingots, and belongs to the technical field of sapphire cutting. Background technique [0002] The composition of sapphire is aluminum oxide, and the crystal structure is a hexagonal lattice structure. Because sapphire has a wide optical penetration band and has good light transmission from near ultraviolet to mid-infrared, it is widely used in optical components, infrared devices, high-strength laser lens materials and photomask materials. It has High sound velocity, high temperature resistance, corrosion resistance, high hardness, high light transmittance, high melting point, etc. At present, the usual growth method of sapphire crystal usually adopts the Chai-type crystal pulling method or the Kjeldahl crystal growth method, and the sapphire crystal ingot structure is grown by the above two methods. After growing the sapphire cry...
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IPC IPC(8): B28D5/00
Inventor 张新忠
Owner ECO POWER WUXI